公开(公告)号：GB2512008B

公开(公告)日：2015-03-04

申请号：GB201412524

申请日：2013-01-14

Applicant: IBM

Inventor： CHENG KANGGUO ,  DORIS BRUCE B ,  KHAKIFIROOZ ALI ,  TULIPE DOUGLAS C LA JR

IPC: H01L29/66

公开(公告)号：GB2520905A

公开(公告)日：2015-06-03

申请号：GB201506267

申请日：2013-09-20

Applicant: IBM

Inventor： ANDRY PAUL S ,  BUDD RUSSELL A ,  KNICKERBOCKER JOHN U ,  TRZCINSKI ROBERT E ,  TULIPE DOUGLAS C LA JR

IPC: H01L21/683

Abstract: A method for processing a semiconductor wafer includes applying a release layer to a transparent handler (S11). An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon (S12). The semiconductor wafer is bonded to the transparent handler using the adhesive layer (S13). The semiconductor wafer is processed while it is bonded to the transparent handler (S14). The release layer is ablated by irradiating the release layer through the transparent handler with a laser (S16). The semiconductor wafer is removed from the transparent handler (S17).

公开(公告)号：GB2512008A

公开(公告)日：2014-09-17

申请号：GB201412524

申请日：2013-01-14

Applicant: IBM

Inventor： CHENG KANGGUO ,  DORIS BRUCE B ,  KHAKIFIROOZ ALI ,  TULIPE DOUGLAS C LA JR

IPC: H01L29/66

Abstract: A device includes a semiconductor-on-insulator (SOI) substrate (110). A gate stack on the SOI substrate (110) includes a gate dielectric layer (185) and a gate conductor layer (190). Low-k spacers (175) are adjacent to the gate dielectric layer (185). Raised source/drain (RSD) regions (160) are adjacent to the low-k spacers (175). The low-k spacers (175) are embedded in an interlayer dielectric (ILD) layer (165) on the RSD regions (160).