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    A switchable interdigital transducer in a SAW filter
    2.
    发明专利
    A switchable interdigital transducer in a SAW filter 未知

    公开(公告)号：GB2499308A

    公开(公告)日：2013-08-14

    申请号：GB201300243

    申请日：2013-01-08

    Applicant: IBM

    Inventor： JAFFE MARK DAVID ,  ADKISSON JAMES WILLIAM ,  STAMPER ANTHONY K ,  WOLF RANDY LEE ,  CANDRA PANGLIJEN ,  GAMBINO JEFFERY P ,  DUNBAR THOMAS J

    IPC: H03H9/64 ,  H03H3/08 ,  H03H9/145

    Abstract: The fingers 22 of a movable electrode of an interdigital transducer (IDT) lie in a cavity above the piezoelectric layer 12 and are moved down to contact the layer 12, between the fingers 14 of a fixed electrode, by applying voltages to electrostatic actuator electrodes 16 or 24. Alternatively, the movable fingers 22 may be formed just above the layer 12 and the actuators used to move the fingers away from the layer 12 or to apply a downward pull-in contact force. The technique allows the switching into circuit of SAW filters without incurring the insertion loss caused by FET switches, or a reduction in Q factor. A SAW filter arrangement may be set to a desired frequency by activating or deactivating selected SAW filters.

    Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
    4.
    发明专利
    Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer 未知

    公开(公告)号：GB2495464A

    公开(公告)日：2013-04-10

    申请号：GB201302640

    申请日：2011-07-28

    Applicant: IBM

    Inventor： BOTULA ALAN B ,  JOSEPH ALVIN ,  SLINKMAN JAMES A ,  WOLF RANDY LEE

    IPC: H01L27/06 ,  H01L21/762 ,  H01L21/84 ,  H01L27/02 ,  H01L27/12

    Abstract: A method, integrated circuit and design structure includes a silicon substrate layer (102) having trench structures (106) and an ion impurity implant (108). An insulator layer (110) is positioned on and contacts the silicon substrate layer. The insulator layer (110) fills the trench structures (106). A circuitry layer is positioned on and contacts the buried insulator layer (110). The circuitry layer comprises groups of active circuits (112) separated by passive structures (114). The trench structures (106) are positioned between the groups of active circuits (112) when the integrated circuit structure is viewed from the top view. Thus, the trench structures (106) are below the passive structures (114) and are not below the groups of circuits when the integrated circuit structure is viewed from the top view.

    Switchable piezoelectric filters using micro-electro-mechanical beam and design structures
    6.
    发明专利
    Switchable piezoelectric filters using micro-electro-mechanical beam and design structures 未知

    公开(公告)号：GB2498261A

    公开(公告)日：2013-07-10

    申请号：GB201223287

    申请日：2012-12-21

    Applicant: IBM

    Inventor： JAFFE MARK DAVID ,  ADKISSON JAMES WILLIAM ,  STAMPER ANTHONY K ,  WOLF RANDY LEE ,  CANDRA PANGLIJEN ,  GAMBINO JEFFERY P ,  DUNBAR THOMAS J

    IPC: H01L41/047 ,  H01L41/107 ,  H03H9/02 ,  H03H9/64

    Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric (PE) filter structure comprising a plurality of electrodes 14, 16 formed on a PE 12. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam 26 formed above the PE substrate and at a location in which, upon actuation, the MEMS beam shorts the PE filter structure by contacting at least one of the plurality of electrodes. The PE filter may be surface acoustic wave (SAW) filter. The SAW filter may comprise input and output transducers comprising interleaved electrodes. The PE filter may be a bulk acoustic wave (BAW) filter. The beam may be perpendicular to the interleaved electrodes and may cover the whole area of the electrodes of at least one filter structure. The structure may be formed using computer aided design. In one embodiment the frequency of a filter may be determined and the beam may be actuated to contact one of the electrodes depending on the frequency.

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