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    3.
    发明专利
    未知

    公开(公告)号：DE69932010T2

    公开(公告)日：2007-01-11

    申请号：DE69932010

    申请日：1999-08-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LIN CHENTING

    IPC: H01L21/306 ,  B24B37/04 ,  H01L21/304

    Abstract: In accordance with the present invention, a method is disclosed for releasing semiconductor wafers from a polishing pad. The method includes the steps of applying a slurry to a polishing pad, rotating the polishing pad having slurry thereon while applying pressure against a wafer such that the wafer is polished by the slurry, introducing water to the polishing pad, increasing the rotational speed of the polishing pad to remove a portion of the slurry, decreasing the pressure during the step of increasing rotational speed to substantially prevent further polishing and removing the wafer from the polishing pad.

    4.
    发明专利
    未知

    公开(公告)号：DE69932010D1

    公开(公告)日：2006-08-03

    申请号：DE69932010

    申请日：1999-08-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LIN CHENTING

    IPC: H01L21/306 ,  B24B37/04 ,  H01L21/304

    Abstract: In accordance with the present invention, a method is disclosed for releasing semiconductor wafers from a polishing pad. The method includes the steps of applying a slurry to a polishing pad, rotating the polishing pad having slurry thereon while applying pressure against a wafer such that the wafer is polished by the slurry, introducing water to the polishing pad, increasing the rotational speed of the polishing pad to remove a portion of the slurry, decreasing the pressure during the step of increasing rotational speed to substantially prevent further polishing and removing the wafer from the polishing pad.

    5.
    发明专利
    未知

    公开(公告)号：DE60014994T2

    公开(公告)日：2006-02-09

    申请号：DE60014994

    申请日：2000-02-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LIN CHENTING ,  VAN DEN BERG ROBERT ,  PANDEY SUMIT

    IPC: B24B37/04 ,  B24B57/02 ,  H01L21/302 ,  H01L21/304

    Abstract: Improved CMP uniformity is achieved by providing improved control of the slurry distribution. Improved slurry distribution is achieved by, for example, the use of a slurry dispenser (42) that dispenses slurry (44) from a plurality of dispensing points. Providing a squeeze bar between the slurry dispenser (42) and wafer to redistribute the slurry (44) also improves the slurry distribution.

    6.
    发明专利
    未知

    公开(公告)号：DE60014994D1

    公开(公告)日：2004-11-25

    申请号：DE60014994

    申请日：2000-02-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LIN CHENTING ,  VAN DEN BERG ROBERT ,  PANDEY SUMIT

    IPC: B24B37/04 ,  B24B57/02 ,  H01L21/302 ,  H01L21/304

    Abstract: Improved CMP uniformity is achieved by providing improved control of the slurry distribution. Improved slurry distribution is achieved by, for example, the use of a slurry dispenser (42) that dispenses slurry (44) from a plurality of dispensing points. Providing a squeeze bar between the slurry dispenser (42) and wafer to redistribute the slurry (44) also improves the slurry distribution.

    COMPOSITION AND METHOD FOR REDUCING DISHING ON SURFACE OF WIDE PATTERNED BURIED METAL
    7.
    发明专利
    COMPOSITION AND METHOD FOR REDUCING DISHING ON SURFACE OF WIDE PATTERNED BURIED METAL 失效

    公开(公告)号：JP2000169831A

    公开(公告)日：2000-06-20

    申请号：JP26049599

    申请日：1999-09-14

    Applicant: SIEMENS AG ,  IBM

    Inventor： LIN CHENTING ,  WANG JIUN-FANG ,  JAMIN FEN FEN ,  RAMACHANDRAN RAVIKUMAR

    IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768

    Abstract: PROBLEM TO BE SOLVED: To obtain the subject composition capable of reducing the dishing on the surface of a wide patterned buried metal in a conductor, when an article having the patterned metal in the conductor is subjected to chemical and mechanical polishing treatments by adding a viscosity-increasing agent to a slurry containing a polishing agent in stead of a part of deionized water in the slurry. SOLUTION: A viscosity-improving agent is added in stead of a part of deionized water in a slurry containing a polishing material. The viscosity- improving agent is preferably glycerol and is replaced with 0.1-50 vol.% of the deionized water. The polishing material is preferably alumina. The composition preferably has a viscosity of 3.4-12 cps. When a conductor to be processed is treated, it is preferable that the surface of the conductor is exposed to the composition.

    8.
    发明专利
    未知

    公开(公告)号：DE69935291D1

    公开(公告)日：2007-04-12

    申请号：DE69935291

    申请日：1999-07-30

    Applicant: SIEMENS AG ,  IBM

    Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

    IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

    Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

    10.
    发明专利
    未知

    公开(公告)号：DE69935291T2

    公开(公告)日：2007-11-22

    申请号：DE69935291

    申请日：1999-07-30

    Applicant: SIEMENS AG ,  IBM

    Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

    IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

    Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

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