Solder bump sealing method and device
    2.
    发明授权
    Solder bump sealing method and device 有权
    焊接凸块密封方法及装置

    公开(公告)号:US09330874B2

    公开(公告)日:2016-05-03

    申请号:US14456972

    申请日:2014-08-11

    CPC classification number: H01H59/0009 B81C1/00333 H01H49/00 H03H9/1057

    Abstract: A method for forming a cavity in a microfabricated structure, includes the sealing of that cavity with a low temperature solder. The method may include forming a sacrificial layer over a substrate, forming a flexible membrane over the sacrificial layer, forming a release hole through a flexible membrane to the sacrificial layer, introducing an etchant through the release hole to remove the sacrificial layer, and then sealing that release hole with a low temperature solder.

    Abstract translation: 用于在微细结构中形成空腔的方法包括用低温焊料密封该空腔。 该方法可以包括在衬底上形成牺牲层,在牺牲层上形成柔性膜,形成通过柔性膜到牺牲层的释放孔,通过释放孔引入蚀刻剂以去除牺牲层,然后密封 该释放孔与低温焊料。

    Anodic bonding of dielectric substrates
    3.
    发明授权
    Anodic bonding of dielectric substrates 有权
    介电基片的阳极结合

    公开(公告)号:US09533877B2

    公开(公告)日:2017-01-03

    申请号:US15098353

    申请日:2016-04-14

    Inventor: Benedikt Zeyen

    Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

    Abstract translation: 具有图案化电介质阻挡层和可氧化金属层的第一富离子电介质基片阳极结合到第二富离子电介质基片上。 为了结合基板,可氧化的金属层被氧化。 电介质阻挡层可以抑制这些离子迁移到粘结线,否则可能会损害粘结强度。 因此,当接合两个基板时,在晶片之间保持牢固的结合。

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