公开(公告)号：WO2006113145A2

公开(公告)日：2006-10-26

申请号：PCT/US2006012846

申请日：2006-04-07

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G03F1/84 ,  G03F1/36 ,  Y10S430/146

Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

Abstract translation: 公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。 通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

公开(公告)号：WO2010147846A2

公开(公告)日：2010-12-23

申请号：PCT/US2010038202

申请日：2010-06-10

Applicant: KLA TENCOR TECH CORP ,  STOKOWSKI STANLEY E

Inventor： STOKOWSKI STANLEY E

IPC: H01L21/027 ,  G03F1/00 ,  H01L21/66

CPC classification number: G03F1/84 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about -1 to -3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.

Abstract translation: 提供了用于检查诸如极紫外（EUV）掩模坯料等未图案化物体的新颖的检查方法和系统，用于表面缺陷，包括极小的缺陷。 缺陷可以包括各种相位物体，例如高度仅为约1纳米的凸块和凹坑以及小颗粒。 检测在小于约250纳米的波长下进行，例如重新配置的深UV检测系统。 部分相干σ设定在约0.15和0.5之间。 通过使用一个或多个散焦的检查通道可以找到相位缺陷，例如在一个正的深度焦点（DOF）和一个负的DOF。 在某些实施方案中，DOF在约-1至-3和/或+1至+3之间。 可以组合多次检查通过的结果来区分缺陷类型。 检查方法可以包括应用匹配滤波器，阈值和/或校正因子，以便提高信噪比。

公开(公告)号：WO2006113126A3

公开(公告)日：2009-04-09

申请号：PCT/US2006012608

申请日：2006-04-03

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06K9/00 ,  G01R31/26 ,  H01L21/22 ,  H01L21/38 ,  H01L21/66

CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.

Abstract translation: 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技​​术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

公开(公告)号：WO2006113146A3

公开(公告)日：2007-08-30

申请号：PCT/US2006012847

申请日：2006-04-07

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

IPC: G03F1/00

CPC classification number: G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：WO2006113135A2

公开(公告)日：2006-10-26

申请号：PCT/US2006012741

申请日：2006-04-05

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC classification number: G03F1/84 ,  Y10S430/146

Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

Abstract translation: 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。 在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。 在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

公开(公告)号：WO03069263A9

公开(公告)日：2004-03-04

申请号：PCT/US0304043

申请日：2003-02-11

Applicant: KLA TENCOR TECH CORP

Inventor： VAEZ-IRAVANI MEHDI ,  ZHAO GUOHENG ,  STOKOWSKI STANLEY E

IPC: G01B11/30 ,  G01B11/24 ,  G01N21/47 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66 ,  G01N21/00

CPC classification number: G01N21/95623 ,  G01N21/47 ,  G01N21/94 ,  G01N2201/1045

Abstract: A cylindrical mirror or lens (12) is used to focus an input collimated beam of light onto a line (20) on the surface to be inspected, where the line is substantially in the plane of incidence of the focused beam. An image of the beam is projected onto an array of CCD (32) parallel to the line for detecting anomalies and/or features of the surface, where the array is outside the plane of incidence of the focused beam. For inspecting surface with a pattern thereon, the light from the surface is first passed through a spatial filter (106) before it is imaged onto the CCD. The spatial filter may be replaced by reflective strips that selectively reflects scattered radiation to the detector, where the reflective strips also shift in synchronism with the relative motion.

Abstract translation: 圆柱形镜或透镜（12）用于将输入的准直光束聚焦到要检查的表面上的线（20）上，其中线基本上在聚焦束的入射平面中。 光束的图像被投影到平行于线的CCD阵列（32）上，用于检测表面的异常和/或特征，其中阵列位于聚焦光束的入射平面之外。 为了在其上检查具有图案的表面，来自表面的光在其被成像到CCD之前首先通过空间滤光器（106）。 空间滤波器可以由选择性地将散射的辐射反射到检测器的反射条替代，其中反射条也与相对运动同步地移动。

公开(公告)号：SG176552A1

公开(公告)日：2012-01-30

申请号：SG2011080876

申请日：2010-06-10

Applicant: KLA TENCOR TECH CORP

Inventor： STOKOWSKI STANLEY E

IPC: G03F1/00

Abstract: Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about -1 to -3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.

公开(公告)号：EP1875309A4

公开(公告)日：2012-03-07

申请号：EP06749311

申请日：2006-04-03

Applicant: KLA TENCOR TECH CORP

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06K9/00 ,  G01R31/26 ,  H01L21/22 ,  H01L21/38 ,  H01L21/66

CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146