公开(公告)号：KR20120004251A

公开(公告)日：2012-01-12

申请号：KR20100065014

申请日：2010-07-06

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM GI HEON ,  KIM YONG HAE ,  LEE WON JAE

IPC: G02F1/1333

Abstract: PURPOSE: A flexible electric device is provided to effectively alleviate the bending phenomena of a substrate. CONSTITUTION: A first substrate(100) has flexibility. A second substrate(110) is separated to the first substrate. The ground particles(106) separates the first and second substrate between the first substrate and the second substrate. Adhesives(102) are arranged along the edge of the second substrate. At least one part of adhesive is opened. The adhesive sticks to the first and second substrate.

Abstract translation: 目的：提供灵活的电气设备，以有效减轻基板的弯曲现象。 构成：第一衬底（100）具有灵活性。 第二基板（110）被分离成第一基板。 研磨颗粒（106）在第一基板和第二基板之间分离第一和第二基板。 粘合剂（102）沿着第二基板的边缘布置。 至少打开一部分粘合剂。 粘合剂粘附到第一和第二基底上。

公开(公告)号：EP2069861A4

公开(公告)日：2010-06-09

申请号：EP07808307

申请日：2007-09-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM CHUL AM ,  KANG SEUNG YOUL ,  MYOUNG HEY JIN ,  SUH KYUNG SOO ,  AHN SEONG DEOK ,  KIM GI HEON ,  YOU IN KYU ,  OH JI YOUNG

IPC: G02F1/167

CPC classification number: G02F1/167 ,  G02F1/1303

公开(公告)号：KR100777110B1

公开(公告)日：2007-11-19

申请号：KR20060062870

申请日：2006-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KANG SEUNG YOUL ,  AHN SEONG DEOK ,  PARK SANG HEE ,  HWANG CHI SUN ,  YOU IN KYU ,  KIM CHUL AM ,  KIM GI HEON ,  BAEK KYU HA ,  OH JI YOUNG ,  SUH KYUNG SOO

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: A flexible organic thin-film transistor and a manufacturing method thereof are provided to stabilize performance of a final element by maintaining reproducibility and stability in an etch process. A gate electrode(12) is positioned on an upper surface of a substrate(10). An organic semiconductor thin film(16) is formed on both sides of an organic insulating layer in order to face the gate electrode. A source/drain electrode(14) is positioned on the organic insulating layer and is connected to the organic semiconductor thin film. An etch-stop layer(15) is formed to cover the organic insulating layer. The etch-stop layer is formed with an inorganic layer. The inorganic layer is formed with one of an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer.

Abstract translation: 提供了一种柔性的有机薄膜晶体管及其制造方法，以通过在蚀刻工艺中保持再现性和稳定性来稳定最终元件的性能。 栅电极（12）位于衬底（10）的上表面上。 有机半导体薄膜（16）形成在有机绝缘层的两侧以面对栅电极。 源极/漏极（14）位于有机绝缘层上并与有机半导体薄膜连接。 形成蚀刻停止层（15）以覆盖有机绝缘层。 蚀刻停止层由无机层形成。 无机层由氧化铝层，氧化硅层和氮化硅层中的一个形成。