公开(公告)号：JPH10233402A

公开(公告)日：1998-09-02

申请号：JP22004397

申请日：1997-07-31

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HAKU SHUTAI ,  YOO HYUNG JOUN ,  RYU SHOZEN

IPC: H01L21/28 ,  H01L21/322 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To remove the pollutant in a contact hole for enhancing the crystalline characteristics, by a method wherein a contact hole is coated with a metal to be buried in the contact hole so that the gathering step may be performed during the advancement of respective stages forming a metallic wiring by patterning process or after the completion of the stages. SOLUTION: A P well 22 is formed on a semiconductor substrate 21, and after growing a field oxide film 24, a gate insulating film 25 and a gate electrode 23 are formed. Next, in the stage finishing the formation of an interlayer insulating film 26 and a definite contact hole, the substrate underside is implanted with ions so as to perform the true gathering step by the thin film evaporation under the stress such as silicon nitride, etc., extensional gathering doing the physical damage by scratching.rapping, etc., or using either the rapid heat treatment or an electric furnace. Later, the partition wall metal and wiring metal evaporation step is advanced to form the patterns. Through these procedures, the semiconductor substrate on the contact hole underside can be made into a non-defective region, thereby enabling the crystal to be restored to the single crystalline level.

公开(公告)号：JPH10247622A

公开(公告)日：1998-09-14

申请号：JP33492897

申请日：1997-11-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SAI SOSHU ,  ZEN EICHIN ,  KIN HOYU ,  YOO HYUNG JOUN

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To make largest the contact between alignment signals, which are generated from an alignment mark, by a method wherein the alignment mark is formed on a membrane on the part of an alignment window and the membrane part excluded the alignment mark part is removed to form a through hole. SOLUTION: A selected part of an X-ray absorber is removed in an electron beam lithography process and a anisotropic etching process. Photoresists 130 are respectively applied on the upper part of a first X-ray transmission body 12 and the upper part of a second X-ray transmission body 13. The photoresists 130 are patterned in such a way that the transmission body 12 of the part of an alignment window 15R and the transmission body 13 of the parts of a main chip window 14R and the window 15R are exposed. Exposed parts of the transmission bodies 12 and 13 are removed using the photoresists 130 as etching masks. A mask substrate 11 is etched until the transmission body 12 is exposed using the patterned photoresists 130 as etching masks.

公开(公告)号：JPH10188864A

公开(公告)日：1998-07-21

申请号：JP26695097

申请日：1997-09-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON HO ,  LEE JIN HO ,  CHO KYOUNG IK ,  YOO HYUNG JOUN

IPC: H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  H01J31/15

Abstract: PROBLEM TO BE SOLVED: To manufacture a field emission display of high picture quality and high density by reducing a cost. SOLUTION: A field emission element of a pixel array 20 is constituted by a silicon field emission element formed on an insulating substrate 10 so that a complementary polycrystalline silicon thin film transistor used as a basic circuit of a scan drive circuit 30 and a data drive circuit 10 can be easily integrated in the substrate 10 formed with the pixel array 20. In each pixel of the pixel array 20, a high voltage thin film transistor is attached, by applying a display signal through the high voltage thin film transistor, generation of low voltage in the scan and data drive circuit 30, 40 is attained.

公开(公告)号：FR2757676A1

公开(公告)日：1998-06-26

申请号：FR9711999

申请日：1997-09-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON HO ,  LEE JIN HO ,  CHO KYOUNG IK ,  YOO HYUNG JOUN

IPC: H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  H01J29/46

Abstract: The field emitter structure has upper and lower parallel plates made up of a network of pixels having several emitter mechanisms (21). Each mechanism has the grid electrode set to a constant voltage. The pixels are voltage fed by a sweep command circuit (30) commanded from digital words. A thin film transistor (22) applies the high voltage to the pixel network. The pixel network, sweep circuit, digital command and transistor thin film are integrated on a single substrate.

公开(公告)号：FR2757676B1

公开(公告)日：2000-02-11

申请号：FR9711999

申请日：1997-09-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON HO ,  LEE JIN HO ,  CHO KYOUNG IK ,  YOO HYUNG JOUN

IPC: H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  H01J29/46

Abstract: The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.