公开(公告)号：AU2003288774A1

公开(公告)日：2004-12-13

申请号：AU2003288774

申请日：2003-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOUN DOO-HYEB ,  CHAE BYUNG-GYU ,  KIM HYUN-TAK ,  KANG KWANG-YONG

IPC: H01L21/316 ,  H01L29/772 ,  H01L49/00 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

公开(公告)号：EP1851802A4

公开(公告)日：2012-07-25

申请号：EP06715993

申请日：2006-02-17

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN-TAK ,  KANG KWANG-YONG ,  CHAE BYUNG-GYU ,  KIM BONG-JUN ,  YUN SUN-JIN ,  LEE YONG-WOOK ,  KIM GYUNG-OCK ,  YOUN DOO-HYEB ,  LIM JUNG-WOOK

IPC: H01L27/04 ,  H01L29/772 ,  H01L49/00

CPC classification number: H01L49/003 ,  H01L27/0248

公开(公告)号：EP1625625A4

公开(公告)日：2009-08-12

申请号：EP03781053

申请日：2003-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM H T ,  KANG KWANG-YONG ,  YOUN DOO-HYEB ,  CHAE BYUNG-GYU

IPC: H01L49/00 ,  H01L21/316 ,  H01L29/772 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L49/003 ,  H01L21/31691 ,  H01L51/0051 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545

Abstract: Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

公开(公告)号：EP1839352A4

公开(公告)日：2012-09-19

申请号：EP06700139

申请日：2006-01-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN-TAK ,  YOUN DOO-HYEB ,  CHAE BYUNG-GYU ,  KANG KWANG-YONG ,  KIM BONG-JUN ,  LEE YONG-WOOK ,  YUN SUN-JIN ,  LIM JUNG-WOOK ,  KIM GYUNG-OCK ,  MAENG SUNG-LYUL

IPC: H01M2/34 ,  H01M10/44

CPC classification number: H01M2/34 ,  H01M2/348 ,  H01M10/052 ,  H01M10/443 ,  H01M2200/00 ,  H01M2200/106

公开(公告)号：EP1825519A4

公开(公告)日：2011-01-05

申请号：EP05821307

申请日：2005-12-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOUN DOO-HYEB ,  KIM HYUN-TAK ,  CHAE BYUNG-GYU ,  MAENG SUNG-LYUL ,  KANG KWANG-YONG

IPC: H01L49/00 ,  H01L29/45

CPC classification number: H01L49/003 ,  H01L29/452