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1.发明公开METHOD OF SYNTHESIZING ITO ELECTRON-BEAM RESIST AND METHOD OF FORMING ITO PATTERN USING THE SAME 有权用于合成的ITO电子束法的抗蚀剂和用于形成图案的ITO METHOD
公开(公告)号：EP2137110A4
公开(公告)日：2012-03-14
申请号：EP08723588
申请日：2008-03-19
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM KI-CHUL , MAENG SUNG-LYUL , SHIN SUNG-JIN , KANG DAE-JOON
IPC: C01G19/00
CPC classification number: C01G19/00 , C01P2002/70 , C01P2002/84 , C01P2004/03 , C01P2006/40 , C23C18/1216 , C23C18/14 , G03F7/0042 , Y10S430/143
Abstract: Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.
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公开(公告)号：EP1839352A4
公开(公告)日：2012-09-19
申请号：EP06700139
申请日：2006-01-12
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HYUN-TAK , YOUN DOO-HYEB , CHAE BYUNG-GYU , KANG KWANG-YONG , KIM BONG-JUN , LEE YONG-WOOK , YUN SUN-JIN , LIM JUNG-WOOK , KIM GYUNG-OCK , MAENG SUNG-LYUL
CPC classification number: H01M2/34 , H01M2/348 , H01M10/052 , H01M10/443 , H01M2200/00 , H01M2200/106
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3.发明公开DEVICE USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE 审中-公开WITH突变金属 - 绝缘体 - ÜBRGANGSSCHICHT与制造设备的方法的装置
公开(公告)号：EP1825519A4
公开(公告)日：2011-01-05
申请号：EP05821307
申请日：2005-12-05
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： YOUN DOO-HYEB , KIM HYUN-TAK , CHAE BYUNG-GYU , MAENG SUNG-LYUL , KANG KWANG-YONG
CPC classification number: H01L49/003 , H01L29/452
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