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公开(公告)号：WO2016153599A3
公开(公告)日：2016-11-10
申请号：PCT/US2016015819
申请日：2016-01-29
Applicant: SI-WARE SYSTEMS
Inventor： KHALIL DIAA , SAADANY BASSAM A , SABRY YASSER M
CPC classification number: G01J3/45 , G01J3/0256 , G01J3/108 , G01J3/26 , G01J3/453 , G01J3/4531 , G01J3/4532 , G01J3/4535
Abstract: A spectrometer with increased optical throughput and/or spectral resolution includes a plurality of interferometers coupled in parallel. An optical splitter divides a source light beam into a plurality of input beams and directs each of the input beams to a respective one of the plurality of interferometers. One or more detectors are optically coupled to receive a respective output from each of the plurality of interferometers and is configured to detect an interferogram produced as a result of the outputs.
Abstract translation: 具有增加的光学吞吐量和/或光谱分辨率的光谱仪包括并联耦合的多个干涉仪。 光分路器将源光束分成多个输入光束，并将每个输入光束引导到多个干涉仪中的相应一个。 一个或多个检测器被光学耦合以从多个干涉仪中的每一个接收相应的输出，并且被配置为检测作为输出结果产生的干涉图。
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公开(公告)号：WO2017011269A3
公开(公告)日：2017-04-27
申请号：PCT/US2016041357
申请日：2016-07-07
Applicant: SI-WARE SYSTEMS
Inventor： SABRY YASSER M , KHALIL DIAA , BOUROUINA TARIK E , ANWAR MOMEN
CPC classification number: H01L49/00 , G01J3/0205 , G01J3/0208 , G01J3/0216 , G01J3/0237 , G01J3/0245 , G01J3/108 , G01J3/26 , G01J3/42 , H01K1/04 , H01K1/14
Abstract: An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.
Abstract translation: 提供由无序半导体材料（例如黑色硅）产生的光辐射源。 光辐射源包括半导体衬底，蚀刻在半导体衬底中的无序半导体结构和接近无序半导体结构设置的加热元件，并且配置成将无序半导体结构加热到无序半导体结构发射热红外辐射的温度 。
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