Abstract:
A DC-DC boost converter includes an inductor (L) coupled between an input voltage (Vin) and an input node (Nn), a diode (D1) coupled between the input node and an output node (No), and an output capacitor (C1) coupled between the output node and ground such that an output voltage (VBOOST) is formed across the output capacitor. A switch (Sw) selectively couples the input node to ground in response to a drive signal (Vdrive). Control loop circuitry (Vfbk, 15') includes an error amplifier (17') to generate an analog error voltage (Verr) based upon a comparison of a feedback voltage (Vfbk) to a reference voltage (Vref), the feedback voltage being indicative of the output voltage, a quantizer (21) to quantize the analog error voltage to produce a digital error signal (Err), and a drive voltage generation circuit (22) to generate the drive signal as having a duty cycle based upon the digital error signal.
Abstract:
A bridge driver circuit (104) applies a bias voltage across first (142) and second (144) input nodes of a resistive bridge circuit (102) configured to measure a physical property such as pressure or movement. A sensing circuit (185) senses a bridge current (Ipbridge, Inbridge) that flows through the resistive bridge circuit (102) in response to the applied bias voltage. A temperature dependent sensitivity of the resistive bridge circuit (102) is determined by processing the sensed bridge current. A voltage output at first (146) and second (148) output nodes of the resistive bridge circuit (102) is processed to determine a value of the physical property. This processing further involves applying a temperature correction in response to the determined temperature dependent sensitivity.
Abstract:
MEMS device (20) comprising: a semiconductor body (21) with a cavity (23) and forming an anchor portion (24'); a tiltable structure (22) elastically suspended on the cavity (23); a first and a second support arm (25A, 25B) to support the tiltable structure (22); a first and a second piezoelectric actuation structure (30A1, 30A2) biasable to deform mechanically, generating a rotation of the tiltable structure (22) around a rotation axis (A). The piezoelectric actuation structures (30A1, 30A2) carry a first (41A1) and, respectively, a second piezoelectric displacement sensor (41A2) of the MEMS device (20). When the tiltable structure (22) rotates around the rotation axis (A), the displacement sensors (41A1, 41A2) are subject to respective mechanical deformations and generate respective sensing signals in phase opposition to each other, indicative of the rotation of the tiltable structure (22). The sensing signals are configured to be acquired in a differential manner.
Abstract:
Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage.
Abstract:
A FBDDA amplifier (10) comprising: a first differential input stage (1a, 1b), which receives an input voltage (Vin); a second differential input stage (1c, 1d), which receives a common-mode voltage (V CM ); a first resistive-degeneration group (12) coupled to the first differential input; a second resistive-degeneration group (16) coupled to the second differential input; a differential output stage, generating an output voltage; a first switch (14) coupled in parallel to the first resistive-degeneration group (12); and a second switch (18) coupled in parallel to the second resistive-degeneration group (16). The first and second switches (14, 18) are driven into the closed state when the voltage input (Vin) assumes a first value such that said first input stage operates in the linear region, and are driven into the open state when the voltage input (Vin) assumes a second value, higher than the first value, such that the first input stage operates in a non-linear region.
Abstract:
A DC-DC boost converter (11) includes an inductor (L) coupled between an input voltage (Vin) and an input node (Nn), a first path coupled between the input node (Nn) and a first output node (N1) at which a first output voltage (VBOOSTL) is generated, and a second path coupled between the input node (Nn) and a second output node (N2) at which a second output voltage (VBOOSTR) is generated. The DC-DC boost converter (11) operates in a first operating phase where the first path boosts the first output voltage (VBOOSTL) and where the second path is kept from boosting the second output voltage (VBOOSTR) by the second path being coupled to the first path, and operates in a second operating phase where the second path boosts the second output voltage (VBOOSTR) and where the first path is kept from boosting the first output voltage (VBOOSTL) by the second path not being coupled to the first path.
Abstract:
Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage.
Abstract:
Disclosed herein is a control system (10) for a projection system (17), including a first subtractor (12) receiving an input drive signal (INPUT) and a feedback signal (FBK) and generating a first difference signal (DIFF1) therefrom, the feedback signal being indicative of position of a quasi-static micromirror (19b) of the projection system. A type-2 compensator (15a) receives the first difference signal (DIFF1) and generates therefrom a first output signal (OUT1). A derivative based controller (15b) receives the feedback signal (FBK) and generates therefrom a second output signal (OUT2) . A second subtractor (16) receives the first (OUT1) and second (OUT2) output signals and generates a second difference signal (DIFF2) therefrom. The second difference signal serves to control a mirror driver (19a) of the projection system. A higher order resonance equalization circuit (20) receives a pre-output signal from an analog front end (19c) of the projection system that is indicative of position of the quasi-static micromirror (19b), and generates the feedback signal (FBK) therefrom.