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公开(公告)号：BR0305936A
公开(公告)日：2004-09-14
申请号：BR0305936
申请日：2003-12-08
Applicant: XEROX CORP
Inventor： KNEISSL MICHAEL A , TREAT DAVID W
IPC: C23C16/34 , C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L31/18 , H01S5/042 , H01S5/343 , H01L33/00 , H01L21/78
Abstract: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.
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公开(公告)号：BR0306028A
公开(公告)日：2004-08-31
申请号：BR0306028
申请日：2003-12-15
Applicant: XEROX CORP
Inventor： WONG WILLIAM S , CHABINYC MICHAEL L , READY STEVEN E , KNEISSL MICHAEL A , TEEPE MARK R
IPC: G01N35/08 , B01L3/00 , B29C39/10 , B29L31/34 , B81C1/00 , G01N21/01 , G01N37/00 , H01L31/0352 , G01N21/64
Abstract: A method of forming an integrated microelectronic device and a micro channel is provided. The method offers an inexpensive way of integrating devices that are usually incompatible during fabrication, a microchannel and a microelectronic structure such as an electro-optic light source, a detector or a MEMs device into a single integrated structure.
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公开(公告)号：DE60225110D1
公开(公告)日：2008-04-03
申请号：DE60225110
申请日：2002-11-15
Applicant: XEROX CORP
Inventor： NORTHUP JOHN E , KNEISSL MICHAEL A
Abstract: A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.
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公开(公告)号：DE60025407T2
公开(公告)日：2006-07-27
申请号：DE60025407
申请日：2000-04-07
Applicant: XEROX CORP
Inventor： VAN DE WALLE CHRISTIAN G , BOUR DAVID P , KNEISSL MICHAEL A , ROMANO LINDA T
Abstract: An asymmetric waveguide nitride laser diode structure and a method of fabricating the same is provided. The asymmetric laser diode structure comprises an active layer having a first and a second surface, a transition layer in contact with the first surface of the active layer, a p-cladding layer disposed adjacent to the transition layer, and an n-type layer in contact with the second surface of the active layer.
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公开(公告)号：DE60022723D1
公开(公告)日：2005-10-27
申请号：DE60022723
申请日：2000-11-03
Applicant: XEROX CORP
Inventor： KNEISSL MICHAEL A , BOUR DAVID P , ROMANO LINDA T , KRUSOR BRENT S , JOHNSON NOBLE M
Abstract: An inner stripe laser diode structure (100) for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
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Patent Agency Ranking
公开(公告)号：DE69919442D1
公开(公告)日：2004-09-23
申请号：DE69919442
申请日：1999-04-28
Applicant: XEROX CORP
Inventor： HOFSTETTER DANIEL , DUNNROWICZ CLARENCE J , SUN DECAI , BRINGANS ROSS D , KNEISSL MICHAEL A
Abstract: A side by side red/IR laser structure (160,156) is flip chip bonded by solder balls (402,404) to a blue laser structure (252) to form a red/blue/IR hybrid integrated laser structure (400).
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公开(公告)号：DE60225110T2
公开(公告)日：2009-03-05
申请号：DE60225110
申请日：2002-11-15
Applicant: XEROX CORP
Inventor： NORTHUP JOHN E , KNEISSL MICHAEL A
Abstract: A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.
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公开(公告)号：DE60022723T2
公开(公告)日：2006-04-27
申请号：DE60022723
申请日：2000-11-03
Applicant: XEROX CORP
Inventor： KNEISSL MICHAEL A , BOUR DAVID P , ROMANO LINDA T , KRUSOR BRENT S , JOHNSON NOBLE M
Abstract: An inner stripe laser diode structure (100) for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
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公开(公告)号：DE69919442T2
公开(公告)日：2005-01-20
申请号：DE69919442
申请日：1999-04-28
Applicant: XEROX CORP
Inventor： HOFSTETTER DANIEL , DUNNROWICZ CLARENCE J , SUN DECAI , BRINGANS ROSS D , KNEISSL MICHAEL A
Abstract: A side by side red/IR laser structure (160,156) is flip chip bonded by solder balls (402,404) to a blue laser structure (252) to form a red/blue/IR hybrid integrated laser structure (400).
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公开(公告)号：DE60236402D1
公开(公告)日：2010-07-01
申请号：DE60236402
申请日：2002-12-12
Applicant: XEROX CORP
Inventor： CHUA CHRISTOPHER L , KNEISSL MICHAEL A , BOUR DAVID P
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