Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.
Abstract:
AN OUT-OF-PLANE MICRO-STRUCTURE WHICH CAN BE USED FOR ON-CHIP INTEGRATION OF HIGH-Q INDUCTORS AND TRANSFORMERS PLACES THE MAGNETIC FIELD DIRECTION PARALLEL TO THE SUBSTRATE PLANE WITHOUT REQUIRING HIGH ASPECT RATIO PROCESSING. THE PHOTOLITHOGRAPHICALLY PATTERNED COIL STRUCTURE INCLUDES AN ELASTIC MEMBER HAVING AN INTRINSIC STRESS PROFILE. THE INTRINSIC STRESS PROFILE BIASES A FREE PORTION AWAY FROM THE SUBSTRATE FORMING A LOOP WINDING (105). AN ANCHOR PORTION (101) REMAINS FIXED TO THE SUBSTRATE. THE FREE PORTION END BECOMES A SECOND ANCHOR PORTION (103) WHICH MAY BE CONNECTED TO THE SUBSTRATE VIA SOLDERING OR PLATING. A SERIES OF INDIVIDUAL COIL STRUCTURES CAN BE JOINED VIA THEIR ANCHOR PORTIONS TO FORM INDUCTORS AND TRANSFORMERS.
Abstract:
An asymmetric waveguide nitride laser diode structure and a method of fabricating the same is provided. The asymmetric laser diode structure comprises an active layer having a first and a second surface, a transition layer in contact with the first surface of the active layer, a p-cladding layer disposed adjacent to the transition layer, and an n-type layer in contact with the second surface of the active layer.
Abstract:
"método para fabricar arranjos emissores de campo de gan". são descritos uma estrutura de nanoponta aperfeiçoada e um método para formar a estrutura de nanoponta e um sistema mostrador que utiliza a estrutura de nanoponta aperfeiçoada. a nanoponta descrita é formada de um semicondutor que possui uma estrutura cristalina, tal como nitreto de gálio. a estrutura cristalina, de preferência, forma deslocamentos orientados na direção das nanopontas. um método de formar a estrutura de nanoponta utiliza as taxas de gravação relativamente lentas que ocorrem em torno dos deslocamentos em comparação com as taxas de gravação mais rápidas que ocorrem em outras partes da estrutura semicondutora. a gravação mais lenta em torno dos deslocamentos possibilita a formação de nanopontas de relação de aspecto relativamente maior na área de deslocamento.
Abstract:
An inner stripe laser diode structure (100) for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
Abstract:
A gyricon or rotating-particle display having an auxiliary optical structure may be provided as an auxiliary optics for a twisting ball display. A gyricon or rotating-particle display may have an "eggcrate" substrate. Further, a combination of an optically transmissive dielectric fluid having a first refractive index and an optically anisotropic particle rotatably disposed in the fluid may be provided.
Abstract:
A stress-balancing layer (130) is formed over portions (122) of a spring metal finger (120) that remain attached to an underlying substrate (101) to counter internal stresses inherently formed in the spring metal finger (120). The (e.g., positive) internal stress of the spring metal causes the claw (tip) (125) of the spring metal finger (120) to bend away from the substrate (101) when an underlying release material is removed. The stress-balancing pad (130) is formed on an anchor portion (122) of the spring metal finger (120), and includes an opposite (e.g., negative) internal stress that counters the positive stress of the spring metal finger (120). A stress-balancing layer (230) is either initially formed over the entire spring metal finger (120) and then partially removed (etched) from the claw portion (125), or selectively deposited only on the anchor portion (122) of the spring metal finger (120). An interposing etch stop layer (325-1) is used when the same material composition is used to form both the spring metal (220) and stress-balancing (230) layers.
Abstract:
A gyricon or rotating-particle display having an auxiliary optical structure may be provided as an auxiliary optics for a twisting ball display . A gyricon or rotating-particle display may have an "eggcrate" substrate. Further, a combination of an optically transmissive dielectric fluid having a first refractive index and an optically anisotropic particle rotatably disposed in the fluid may be provided.
Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.