公开(公告)号：EP1501001A1

公开(公告)日：2005-01-26

申请号：EP03254577.4

申请日：2003-07-22

Applicant: STMicroelectronics Limited

Inventor： Tahir, Rashid

IPC: G05F3/26

CPC classification number: G05F3/265 ,  G05F3/205

Abstract: A biasing circuit comprising a first switching device having a control terminal, and first and second switching terminals. The first switching terminal being connected to a supply voltage, the second switching terminal being connected through a first resistive element to ground, and the control terminal being supplied by a reference voltage which is determined depending on the mode of operation of the circuit. The circuit further comprising a first branch connected between the control terminal and ground comprising a second resistive element in series with a second switching device. The second switching device forming part of a first current mirror having a second branch for effecting a generated bias value. During a normal mode of operation the reference voltage is dependant on the generated bias value, whereas during a standby mode of operation the reference voltage is connected to a low potential.

Abstract translation: 一种偏置电路，包括具有控制端子的第一开关装置和第一和第二开关端子。 第一开关端子连接到电源电压，第二开关端子通过第一电阻元件连接到地，并且控制端子由根据电路的操作模式确定的参考电压提供。 电路还包括连接在控制端和接地之间的第一分支，包括与第二开关装置串联的第二电阻元件。 形成第一电流镜的一部分的第二开关器件具有用于产生产生的偏置值的第二支路。 在正常工作模式下，参考电压取决于产生的偏置值，而在待机工作模式下，参考电压连接到低电位。

公开(公告)号：EP1475961A1

公开(公告)日：2004-11-10

申请号：EP03252835.8

申请日：2003-05-06

Applicant: STMicroelectronics Limited

Inventor： Storm, Graeme ,  Hurwitz, Jonathan Ephriam David

IPC: H04N5/335

CPC classification number: H04N5/335 ,  H04N5/361

Abstract: An image sensor has an array of pixels each of which comprises a photodiode (P) in circuit with a semiconductor device (M2) to define a node (pix). The pixel can be operated in linear mode with reset voltage (Vrt) applied via device M4. The pixel can also be operated in logarithmic mode by asserting 'logsel' to enable device M2 to conduct the photocurrent. In logarithmic mode, means are provided for calibrating the pixels to remove fixed pattern noise. The pixels may be operated in linear and log modes sequentially, with the linear output being selected for low light signals and the log output being selected for high light signals.

Abstract translation: 图像传感器具有像素阵列，每个像素包括与半导体器件（M2）的电路中的光电二极管（P），以限定节点（pix）。 像素可以通过器件M4施加的复位电压（Vrt）在线性模式下工作。 像素也可以以对数模式操作，通过断言“logsel”使器件M2能够传导光电流。 在对数模式中，提供了用于校准像素以去除固定图案噪声的装置。 像素可以顺序地以线性和对数模式操作，对于低光信号选择线性输出，并且对于高光信号选择对数输出。

公开(公告)号：EP1443338A1

公开(公告)日：2004-08-04

申请号：EP03250662.8

申请日：2003-02-03

Applicant: STMicroelectronics Limited

Inventor： Ravenhill, Paul ,  Dellow, Andrew ,  Hutson, Matthew

IPC: G01R31/3185

CPC classification number: G01R31/31719 ,  G01R31/318555

Abstract: A port protection circuit, in particular for protecting a JTAG port, comprises logic gates which are switchable to allow the JTAG port to access scan chains or a Diagnostic Control Unit (DCU). The gating arrangement is controlled by a protection circuit that requires a private key to be input through the JTAG port to "unlock" a circuit so that the gating components allow connection between the JTAG port and scan chains or the DCU.

Abstract translation: 特别是用于保护JTAG端口的端口保护电路包括可切换以允许JTAG端口访问扫描链的逻辑门或诊断控制单元（DCU）。 门控装置由保护电路控制，该保护电路需要通过JTAG端口输入私钥以“解锁”电路，使得门控组件允许JTAG端口与扫描链或DCU之间的连接。

公开(公告)号：EP0702239B1

公开(公告)日：2004-07-21

申请号：EP95305859.1

申请日：1995-08-22

Applicant: STMicroelectronics Limited

Inventor： Warren, Robert

IPC: G01R31/3173 ,  G01R31/3185 ,  G06F11/24 ,  G06F11/267

CPC classification number: G01R31/318555 ,  G06F11/2273

Abstract: A test access port controller is provided for implementing scan testing with a chain of scan latches on an integrated circuit. The test access port controller can implement a structural test or a performance test. Selection between the two types of test is achieved through logic circuitry of the test access port controller. An integrated circuit and a test system are also provided.

公开(公告)号：EP0611014B1

公开(公告)日：2004-03-24

申请号：EP94200820.2

申请日：1990-06-28

Applicant: STMicroelectronics Limited

Inventor： May, Michael David ,  Parsons, Brian Jeremy ,  Thompson, Peter William ,  Walker, Christopher Paul Hulme

IPC: H04L12/56 ,  H04L12/44

CPC classification number: H04L49/30 ,  G06F15/17375 ,  H04L45/06 ,  H04L45/40 ,  H04L49/101 ,  H04L49/106 ,  H04L49/251 ,  H04L49/254 ,  H04L49/3009 ,  H04L49/3018 ,  H04L49/3027 ,  H04Q11/0478

公开(公告)号：EP0702242B1

公开(公告)日：2004-01-14

申请号：EP95305862.5

申请日：1995-08-22

Applicant: STMicroelectronics Limited

Inventor： Warren, Robert

IPC: G01R31/3173 ,  G01R31/3185 ,  G06F11/24 ,  G06F11/267 ,  H03K3/037

CPC classification number: G06F11/2236 ,  G01R31/318541 ,  G01R31/318552 ,  H03K3/0375

公开(公告)号：EP1355360A1

公开(公告)日：2003-10-22

申请号：EP02252751.9

申请日：2002-04-18

Applicant: STMicroelectronics Limited

Inventor： Raynor, Jeff

IPC: H01L27/146

CPC classification number: H01L27/14609

Abstract: A solid state image sensor has an array of pixels formed on an epitaxial layer (10) on a substrate (12). The pixel is large, 40-60 µm, for high light collecting ability, but the pixel photodiode (14') is small, 4-6 µm, for low capacitance. Active elements of the pixel are formed in wells (16) which are spaced away from the photodiode (14') so that the latter is surrounded by epitaxial material.

Abstract translation: 固态图像传感器具有形成在衬底（12）上的外延层（10）上的像素阵列。 像素大，40-60微米，用于高聚光能力，但像素光电二极管（14'）小，4-6微米，用于低电容。 像素的有源元件形成在与光电二极管（14'）间隔开的阱（16）中，使得后者被外延材料包围。

公开(公告)号：EP1351490A1

公开(公告)日：2003-10-08

申请号：EP02252385.6

申请日：2002-04-02

Applicant: STMicroelectronics Limited

Inventor： Henderson, Robert

IPC: H04N3/15

CPC classification number: H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/378

Abstract: An image sensor has an array of pixels (10). Each column has a first (16) and a second (20) column line connected to a read-reset amplifier/comparator (22) which acts in a first mode as a unity gain buffer amplifier to reset the pixels (10) via the first lines (16), and in a second mode acts as a comparator and AD converter to produce digitised reset and signal values. The reset and signal values are read out a line at a time in interleaved fashion. Reset values are stored in a memory (26) and subsequently subtracted from the corresponding signal values. The arrangement reduces both fixed pattern and kT/C noise.

Abstract translation: 图像传感器具有像素阵列（10）。 每列具有连接到以第一模式作用的单位增益缓冲放大器的读复位放大器/比较器（22）的第一（16）和第二（20）列线，其经由第一模式复位像素（10） 线路（16），第二模式用作比较器和AD转换器，以产生数字化的复位和信号值。 复位和信号值以交错方式一次读出一行。 复位值存储在存储器（26）中，并随后从对应的信号值中减去。 该装置减少固定模式和kT / C噪声。

公开(公告)号：EP1333661A1

公开(公告)日：2003-08-06

申请号：EP02250693.5

申请日：2002-02-01

Applicant: STMicroelectronics Limited

Inventor： Henderson, Robert

IPC: H04N3/15

CPC classification number: H04N5/3653 ,  H04N5/3745

Abstract: An image sensor has pixels of four-transistor, pinned-photodiode type. In each pixel, the charge on a photodiode (22) is transferred by transfer gate (14) to a sensing node (Vpix). Readout of reset and read voltages is via an amplifier (36). A gain capacitor (Ch) is connected in feedback across the amplifier (36) and the read and reset gates are controlled such that the pixel is reset to a virtual ground voltage controlled by Ch and independent of the pixel parasitic capacitance (Cp).

Abstract translation: 图像传感器具有四晶体管，钉扎 - 光电二极管类型的像素。 在每个像素中，光电二极管（22）上的电荷被传输门（14）传送到感测节点（Vpix）。 通过放大器（36）读出复位和读取电压。 增益电容器（Ch）被连接在放大器（36）上的反馈中，并且读取和复位门被控制，使得像素被复位到由Ch控制的虚拟接地电压并且独立于像素寄生电容（Cp）。

公开(公告)号：EP1321984A2

公开(公告)日：2003-06-25

申请号：EP01307231.9

申请日：2001-08-24

Applicant: STMicroelectronics Limited

Inventor： Thies, William ,  Froidevaux, Nicolas

IPC: H01L27/118 ,  H01L27/02 ,  H01L23/528

CPC classification number: H01L27/0207 ,  H01L23/5286 ,  H01L24/06 ,  H01L2224/05554 ,  H01L2224/06153

Abstract: A method of producing a semiconductor circuit is disclosed with an area saving in comparison to conventional circuit layouts. IO cells are arranged with a width multiplied by a factor, but with corresponding reduced height. ESD protection circuitry is included at a reduced rate in comparison to usual arrangements. The space saving is achieved by occupying a semiconductor area that would have been used by ESD circuitry with the IO circuitry. ESD protection is maintained but at different locations.

Abstract translation: 公开了一种制造半导体电路的方法，其与传统的电路布局相比具有区域节省。 IO单元被布置成宽度乘以因子，但具有相应减小的高度。 与常规安排相比，ESD保护电路以降低的速度被包括在内。 通过占用由ESD电路与IO电路一起使用的半导体区域来实现节省空间。 ESD保护保持在不同的位置。