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公开(公告)号：KR1020110017613A
公开(公告)日：2011-02-22
申请号：KR1020090075165
申请日：2009-08-14
Applicant: 삼성전자주식회사
CPC classification number: G06F11/10
Abstract: PURPOSE: A sequence replacement method and a device thereof are provided to improve the reliability of a memory device by replacing a specific sequence which is not required with a different sequence. CONSTITUTION: A sequence replacing unit(160) comprises a storage part and a sequence substitution circuit. The storage part stores an m number of sequences which are predefined. The sequence substitution circuit receives a first sequence outputted from a host. When the first sequence is the same as one among the m number of sequences, the sequence substitution circuit outputs a substitution sequence to a memory device instead of the first sequence. The substitution sequence includes pattern bits which represent the pattern of the first sequence and location bits which represent the start location of the first sequence.
Abstract translation: 目的：提供序列替换方法及其装置，通过用不同序列替换不需要的特定序列来提高存储器件的可靠性。 构成：序列替换单元（160）包括存储部分和序列替换电路。 存储部存储预定义的m个序列。 序列替换电路接收从主机输出的第一序列。 当第一序列与m个序列中的序列相同时，序列替换电路将取代序列输出到存储器件而不是第一序列。 替换序列包括表示第一序列的模式的图形比特和表示第一序列的开始位置的位置比特。
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公开(公告)号：KR1020100127398A
公开(公告)日：2010-12-06
申请号：KR1020090045827
申请日：2009-05-26
Applicant: 삼성전자주식회사
CPC classification number: G11C29/82
Abstract: PURPOSE: A memory system and a bad block management method thereof are provided to improve the efficiency of a memory block. CONSTITUTION: A first step is processed to determine that a memory block satisfies a bad block condition(S110). When the memory block satisfies the bad block condition, a subsequent treatment operates in the memory block(S120). The memory block is allocated to the bad block(S130). When the bad block satisfies a bad block release condition, the bad block is released. The subsequent treatment programs a cell in the erase state into a program state cell or stores the timing to assign the memory block as the bad block.
Abstract translation: 目的：提供存储器系统及其坏块管理方法以提高存储器块的效率。 构成：处理第一步以确定存储块满足坏块条件（S110）。 当存储块满足坏块条件时，随后的处理在存储块中进行操作（S120）。 存储块被分配给坏块（S130）。 当坏块满足坏块释放条件时，坏块被释放。 随后的处理将处于擦除状态的单元编程到编程状态单元中，或存储将该存储块分配为坏块的定时。
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93.发明公开
公开(公告)号：KR1020100052159A
公开(公告)日：2010-05-19
申请号：KR1020080111056
申请日：2008-11-10
Applicant: 삼성전자주식회사
CPC classification number: G11C16/26 , G11C11/5642 , G11C29/00 , G11C2211/5634 , G11C7/1051 , G11C16/30 , G11C16/3418
Abstract: PURPOSE: A nonvolatile semiconductor memory device, a memory card thereof, a memory system thereof, and a read voltage estimation method thereof are provided to prevent data error due to the change of read voltage by estimating optimum read voltage through comparing data information during a program process and a read process. CONSTITUTION: A memory cell array(110) comprises a plurality of memory cells. A read voltage estimating unit(20) compares data information during a program process and a read process. The read voltage estimating unit estimates optimum read voltage by changing the read voltage based on the comparison result. A read voltage generating unit(10) generates a corresponding read voltage in response to a control signal of the read voltage estimating unit. A reference data storage unit stores the reference data drawn from program data.
Abstract translation: 目的：提供一种非易失性半导体存储器件，其存储卡，其存储器系统及其读取电压估计方法，以通过在程序期间比较数据信息来估计最佳读取电压，以防止由于读取电压的变化引起的数据错误 过程和阅读过程。 构成：存储单元阵列（110）包括多个存储单元。 读取电压估计单元（20）在程序处理和读取处理期间比较数据信息。 读取电压估计单元通过基于比较结果改变读取电压来估计最佳读取电压。 读取电压产生单元（10）响应于读取电压估计单元的控制信号产生相应的读取电压。 参考数据存储单元存储从程序数据中提取的参考数据。
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公开(公告)号：KR1020100006712A
公开(公告)日：2010-01-21
申请号：KR1020080067030
申请日：2008-07-10
Applicant: 삼성전자주식회사
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0061 , G11C16/04 , G11C29/02 , G11C29/021 , G11C29/24 , G11C2013/0073 , G11C2013/009 , G11C2013/0092
Abstract: PURPOSE: A memory device and a method for programming memory data are provided to reduce a stabilization time of a threshold voltage and improve distribution of the threshold voltage of memory cells by controlling the intervals and the sizes of a plurality of pulses applied to a plurality of memory cells. CONSTITUTION: A memory cell array(310) includes a plurality of memory cells. A programming unit(320) repetitively applies plus pulses and minus pulses to a plurality of memory cells. A controller controls the interval between the plus pulses and the minus pulses and the size of the pulses.
Abstract translation: 目的：提供存储器件和用于编程存储器数据的方法，以通过控制施加到多个存储器数据的多个脉冲的间隔和尺寸来减小阈值电压的稳定时间并改善存储器单元的阈值电压分布 记忆细胞 构成：存储单元阵列（310）包括多个存储单元。 编程单元（320）对多个存储单元重复地加上加脉冲和负脉冲。 控制器控制正脉冲与负脉冲之间的间隔以及脉冲的大小。
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公开(公告)号：KR1020090097673A
公开(公告)日：2009-09-16
申请号：KR1020080022963
申请日：2008-03-12
Applicant: 삼성전자주식회사
CPC classification number: G06F11/1008 , G11C16/26
Abstract: An apparatus for detecting memory data based on a soft decision value are provided to minimize an error of data stored in a memory cell by allotting a soft decision value according to error information. In an apparatus for detecting memory data based on a soft decision value, a reference voltage determination unit(110) determines a soft decision value based on channel information of a memory cell. A voltage comparative part(120) determines a period which includes a threshold voltage by comparing the threshold voltage of the memory cell with a plurality of soft-decision reference voltages. A data detection part detects data stored in memory cell by a period where a threshold voltage is included. A pilot data storage module(140) stores pilot data of the small bit pattern in the memory cell. The data detection part detects the pilot data stored in the memory cell. A channel information estimating unit(150) estimates the channel information of the memory cell based on detected data.
Abstract translation: 提供一种用于基于软判决值检测存储器数据的装置，以通过根据错误信息分配软判定值来最小化存储在存储单元中的数据的错误。 在基于软判决值检测存储器数据的装置中，参考电压确定单元（110）基于存储器单元的信道信息来确定软判决值。 电压比较部件（120）通过将存储器单元的阈值电压与多个软判决参考电压进行比较来确定包括阈值电压的周期。 数据检测部分将存储在存储单元中的数据检测到包含阈值电压的周期。 导频数据存储模块（140）将小位模式的导频数据存储在存储单元中。 数据检测部分检测存储在存储单元中的导频数据。 信道信息估计单元（150）基于检测到的数据来估计存储单元的信道信息。
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Patent Agency Ranking
公开(公告)号：KR1020090090063A
公开(公告)日：2009-08-25
申请号：KR1020080015310
申请日：2008-02-20
Applicant: 삼성전자주식회사
CPC classification number: G06F11/1072 , H03M13/09 , H03M13/15 , H03M13/1515 , H03M13/152
Abstract: A memory device and a memory reading method thereof are provided to improve the performance of an error correction by performing the ECC(Error Correction Code) decoding of the data read from the multi bit cells. A memory device(100) includes a multi bit cell array(110), an error detector(120), and a data estimator(130). The error detector reads a first data page from a memory page(111) inside the multi bit cell array. The error detector performs ECC decoding of the first data page and detects the error bit of the first data page. The estimator identifies the multi bit cell with an error bit. The estimator estimates the data of the second data page stored in the identified multi bit cell.
Abstract translation: 提供了一种存储器件及其存储器读取方法，以通过执行从多位单元读取的数据的ECC（纠错码）解码来改善纠错的性能。 存储器件（100）包括多位单元阵列（110），误差检测器（120）和数据估计器（130）。 误差检测器从多位单元阵列内部的存储器页（111）读取第一数据页。 误差检测器执行第一数据页的ECC解码并检测第一数据页的错误位。 估计器使用错误位来识别多位单元。 估计器估计存储在所识别的多位单元中的第二数据页的数据。
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公开(公告)号：KR1020090086815A
公开(公告)日：2009-08-14
申请号：KR1020080012291
申请日：2008-02-11
Applicant: 삼성전자주식회사
CPC classification number: G11C16/3418 , G11C7/04 , G11C11/5621 , G11C16/3427 , G11C16/349 , G11C29/00 , G11C16/0408 , G11C29/50004 , G11C2029/5004
Abstract: A memory device and a memory heat treatment method are provided to prevent data loss by restoring data retention characteristic which is deteriorated. A memory device(100) comprises a non-volatile memory device(110), more than one heater(121~124), and a controller(130). The heater contacts with the non-volatile memory device, and it heats up the non-volatile memory device. The controller controls an operation of heater based on the operation data of the non-volatile memory device, and the operation data shows an erase times of the non-volatile memory device. If the operation data is greater than a reference value, the controller controls the heater to heat up the non-volatile memory device.
Abstract translation: 提供存储器件和存储器热处理方法，以通过恢复劣化的数据保持特性来防止数据丢失。 存储装置（100）包括非易失性存储装置（110），多于一个加热器（121〜124）和控制器（130）。 加热器与非易失性存储器件接触，并且加热非易失性存储器件。 控制器基于非易失性存储器件的操作数据控制加热器的操作，并且操作数据示出了非易失性存储器件的擦除次数。 如果操作数据大于参考值，则控制器控制加热器以加热非易失性存储器件。
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公开(公告)号：KR1020080072216A
公开(公告)日：2008-08-06
申请号：KR1020070010662
申请日：2007-02-01
Applicant: 삼성전자주식회사
CPC classification number: H04N5/91 , H04N21/4335 , H04N21/47214 , H04N21/475
Abstract: A method for managing a title of a digital broadcasting recorder is provided to copy streams in which only highlighted parts of the original title are summarized in other storages for generating additional highlight titles and to delete the original titles while leaving the highlighted titles in oldest orders for providing a user with the summarized titles and carrying out the reservation recording normally. A method for managing a title of a digital broadcasting recorder comprises: judging whether a key signal corresponding to the reservation setting is inputted(S100); setting program broadcasting channels, program broadcasting dates and reservation recording time(S102); when the recording is started(S104), judging whether storage space of a storage medium is sufficient(S106); receiving the broadcasting signal in the storage medium and generating an original title(S108); displaying where a highlighted part of the original title is stored in any of physical addresses of the storage medium(S110); finishing the recording of the broadcasting program(S112); copying streams in which only highlighted parts of the original title are summarized in other storages to generate additional highlight titles(S114); starting the reservation recording(S116); and deleting the original titles except for the highlight titles in oldest orders(S118).
Abstract translation: 提供一种用于管理数字广播记录器的标题的方法，用于复制其中只有原始标题的突出部分被总结在其他存储器中以产生其他高亮标题的流，并且删除原始标题，同时以最早的顺序留下突出显示的标题 向用户提供总结标题，并正常进行预约录制。 一种用于管理数字广播录像机的标题的方法，包括：判断是否输入了与预约设置相对应的按键信号（S100）; 设置节目广播频道，节目播放日期和预约录制时间（S102）; 当开始记录（S104）时，判断存储介质的存储空间是否足够（S106）; 在所述存储介质中接收所述广播信号并产生原始标题（S108）; 显示原始标题的突出显示部分存储在存储介质的任何物理地址中的位置（S110）; 完成广播节目的录制（S112）; 复制流，其中只有原始标题的突出部分被汇总在其他存储器中以产生其他高亮标题（S114）; 开始预约录音（S116）; 并删除除了最早命令中的高亮标题之外的原始标题（S118）。
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公开(公告)号：KR1020070095480A
公开(公告)日：2007-10-01
申请号：KR1020050078722
申请日：2005-08-26
Applicant: 삼성전자주식회사
CPC classification number: H01L21/76898 , H01L23/3114 , H01L23/481 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05026 , H01L2224/0508 , H01L2224/051 , H01L2224/05124 , H01L2224/05166 , H01L2224/05548 , H01L2224/05571 , H01L2224/056 , H01L2224/13024 , H01L2224/16 , H01L2224/274 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/3011 , H01L2924/00014
Abstract: A method for manufacturing a semiconductor chip package of a wafer level is provided to prevent damage of a conductive pattern in a post process by forming external connection terminals on a rear surface of a wafer and covering a front surface with an encapsulation layer. A conductive pattern(102) is formed a front surface of a wafer(100), and the front surface of the wafer is covered by an encapsulation layer(106). Chip plugs(104) are electrically connected to the conductive pattern, and are embedded in a rear surface of the wafer. External connection terminals are formed on the rear surface of the wafer, and are electrically connected to the chip plugs. The uppermost conductive pattern is directly connected to the chip plugs. The encapsulation layer is made of epoxy molding compound.
Abstract translation: 提供了一种用于制造晶片级的半导体芯片封装的方法，以通过在晶片的后表面上形成外部连接端子并用封装层覆盖前表面来防止后处理中导电图案的损坏。 导电图案（102）形成在晶片（100）的前表面，并且晶片的前表面被封装层（106）覆盖。 芯片插头（104）电连接到导电图案，并且嵌入晶片的后表面。 外部连接端子形成在晶片的后表面上，并且电连接到芯片插头。 最上面的导电图案直接连接到芯片插头。 封装层由环氧树脂模塑料制成。
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公开(公告)号：KR1020070019419A
公开(公告)日：2007-02-15
申请号：KR1020050074377
申请日：2005-08-12
Applicant: 삼성전자주식회사
IPC: H01L21/60
CPC classification number: H01L21/67132 , H01L21/67248 , H01L21/67259 , H01L21/6836
Abstract: 본 발명은 웨이퍼에 부착되는 테이프의 두께를 균일하게 하기 위하여, 웨이퍼가 탑재되는 웨이퍼 고정 테이블과 그 웨이퍼 고정 테이블에 탑재된 웨이퍼의 상부에서 웨이퍼 일면 전체에 압력을 가하여 테이프를 압착하는 테이프 압착 디스크를 포함하는 웨이퍼용 테이프 부착 장치를 제공한다. 평면 압착 방식으로서 테이프를 부착함으로써 웨이퍼에 부착된 테이프의 두께가 균일하게 된다. 따라서, 배면연마 과정에서 테이프의 두께 불균일로 인한 웨이퍼 두께 편차의 발생이 방지된다.
테이프 부착 장치, 배면연마, 보호 테이프, 라미네이션 테이프, 보호시트
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