公开(公告)号：KR1020130084860A

公开(公告)日：2013-07-26

申请号：KR1020120005760

申请日：2012-01-18

Applicant: 삼성전자주식회사

Inventor： 신제식 ,  김덕환 ,  김철수 ,  박호수 ,  손상욱 ,  송인상 ,  이문철 ,  추이징

IPC: H03H9/17

CPC classification number: H01L41/107 ,  H03H9/02102 ,  H03H9/0211 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175

Abstract: PURPOSE: A bulk acoustic resonator including phase differences is provided to increase electric acoustic coupling factor by reducing loss generated by an acoustic wave of a vertical direction. CONSTITUTION: A bulk acoustic resonator comprises an air joint (270), a bulk acoustic resonation unit (260), and a reflection layer (220). The air joint is located on a circuit board (210). The bulk acoustic resonation unit comprises a first electrode (230), a second electrode (250), and a piezoelectric layer (240) located between the first electrode and the second electrode. The reflection layer reflects the wave of a resonance frequency generated in the piezoelectric layer based on a signal applied to the first electrode and the second electrode located at the bottom of the bulk acoustic resonation unit.

Abstract translation: 目的：提供包括相位差的体声波谐振器，以通过减少由垂直方向的声波产生的损耗来增加电声耦合系数。 构成：体声波谐振器包括空气接头（270），体声共振单元（260）和反射层（220）。 空气接头位于电路板（210）上。 体声共振单元包括位于第一电极和第二电极之间的第一电极（230），第二电极（250）和压电层（240）。 反射层基于施加到位于体声波谐振单元的底部的第一电极和第二电极的信号，反映在压电层中产生的共振频率的波。

公开(公告)号：KR1020120054881A

公开(公告)日：2012-05-31

申请号：KR1020100116247

申请日：2010-11-22

Applicant: 삼성전자주식회사 ,  고려대학교 산학협력단

Inventor： 송인상 ,  황성우 ,  박윤권 ,  주병권 ,  이재성 ,  신제식 ,  김희태

IPC: H01P7/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/41 ,  H01L29/78 ,  H03H9/02

CPC classification number: H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1033 ,  H01L29/413 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66439 ,  H01L29/785 ,  H03D1/18 ,  H03D3/26 ,  H03D7/12 ,  H03H2009/02314 ,  H01P7/10

Abstract: PURPOSE: A resonator including three terminals and a manufacturing method thereof are provided to operate An RF device with low power by including a nano wire. CONSTITUTION: A resonator including three terminals includes a substrate, a drain electrode(110), a source electrode(120), and a nano wire(130). The drain electrode is formed on the upper side of the substrate. The source electrode is formed on the upper side of the substrate. The nano wire is separated from the upper side of the substrate. The nano wire is connected to the drain electrode and the source electrode.

Abstract translation: 目的：提供包括三个端子的谐振器及其制造方法，以通过包括纳米线来操作具有低功率的RF器件。 构成：包括三个端子的谐振器包括衬底，漏电极（110），源电极（120）和纳米线（130）。 漏电极形成在基板的上侧。 源电极形成在基板的上侧。 纳米线与衬底的上侧分离。 纳米线连接到漏电极和源电极。

公开(公告)号：KR1020120023285A

公开(公告)日：2012-03-13

申请号：KR1020100085606

申请日：2010-09-01

Applicant: 삼성전자주식회사

Inventor： 손상욱 ,  송인상 ,  김영일 ,  김덕환 ,  김철수 ,  신제식 ,  김형락 ,  이재천

IPC: H03H9/205 ,  H03H9/15

CPC classification number: H03H9/02149 ,  H03H3/04 ,  H03H9/1014 ,  H03H9/131 ,  H03H9/564 ,  H03H9/706 ,  H03H2003/021 ,  H03H9/205 ,  H03H9/15 ,  H03H9/25

Abstract: PURPOSE: A volume acoustic resonator structure and a manufacturing method are provided to reduce power lost through electrodes by the formation of an air cavity on the lower part of the electrodes connecting to a resonator. CONSTITUTION: A first substrate(110) comprises a via hole(113) formed in a fixed region of a lower surface. An insulating layer(115) is formed of insulating materials to expose the fixed region of an electrode pad(117). A first laminate resonant part(120) comprises a first air cavity(121) formed on the top of the first substrate and a first bottom electrode-piezoelectric layer-top electrode laminated on the top of the first air cavity. The second laminate resonant part(130) comprises a second air cavity(131) formed on the top of the first substrate and the second bottom electrode-piezoelectric layer-top electrode laminated on the top of the second air cavity. The first electrode part(140) is formed in order to connect the first laminate resonant part and the second laminate resonant part through the bottom electrode(123) or the top electrode(127).

Abstract translation: 目的：提供体积声共振器结构和制造方法，以通过在连接到谐振器的电极的下部形成气腔来减少通过电极损失的功率。 构成：第一基板（110）包括形成在下表面的固定区域中的通孔（113）。 绝缘层（115）由绝缘材料形成以暴露电极焊盘（117）的固定区域。 第一层压共振部件（120）包括形成在第一基板的顶部上的第一空气腔（121）和层压在第一空气腔的顶部上的第一底部电极 - 压电层 - 顶部电极。 第二层压共振部件（130）包括形成在第一基板的顶部上的第二空气腔（131）和层压在第二空气腔的顶部上的第二底部电极 - 压电层 - 顶部电极。 为了通过底部电极（123）或顶部电极（127）连接第一层叠共振部分和第二层压共振部分，形成第一电极部分（140）。

公开(公告)号：KR1020110131674A

公开(公告)日：2011-12-07

申请号：KR1020100051237

申请日：2010-05-31

Applicant: 삼성전자주식회사

Inventor： 전국진 ,  강성찬 ,  김철수 ,  송인상 ,  김덕환 ,  신제식

IPC: H01L23/28 ,  H01L23/08 ,  H01L23/043

CPC classification number: H01L23/043 ,  H01L21/0274 ,  H01L23/481 ,  H01L23/522

Abstract: PURPOSE: A device protection cap which uses a photo-sensitive glass substrate and a manufacturing method thereof are provided to arrange a penetration hole by wet-etching the photo-sensitive glass substrate, thereby preventing the generation of scallop or footing phenomenon in an etched part. CONSTITUTION: A photo-sensitive glass substrate(101) protects a device while being installed in the upper part of a device substrate. A penetration hole(110) is arranged within the photo-sensitive glass substrate. A first metal wiring layer(120) is arranged in the inside of the penetration hole. A second metal wiring layer(130) is arranged in a partial area of the upper or lower surface of the photo-sensitive glass substrate. The second metal wiring layer is connected to the first metal wiring layer.

Abstract translation: 目的：使用光敏玻璃基板的装置保护盖及其制造方法，通过湿式蚀刻光敏玻璃基板来设置贯通孔，从而防止蚀刻部分产生扇贝或脚踏现象 。 构成：感光玻璃基板（101）在安装在装置基板的上部时保护装置。 穿透孔（110）布置在感光玻璃基板内。 第一金属布线层（120）布置在穿透孔的内部。 第二金属布线层（130）布置在感光玻璃基板的上表面或下表面的局部区域中。 第二金属布线层与第一金属布线层连接。

公开(公告)号：KR1020110051757A

公开(公告)日：2011-05-18

申请号：KR1020090108502

申请日：2009-11-11

Applicant: 삼성전자주식회사

Inventor： 김형락 ,  송인상 ,  김덕환 ,  박윤권 ,  신제식 ,  김영일 ,  김철수

IPC: H03K17/76 ,  H03H9/66

CPC classification number: H03H9/706 ,  H04B1/0057 ,  H04B1/52

Abstract: PURPOSE: A multiplexer and multiband including a meta material phase shifter are provided to manufacture the multiband of the small size as one or more inductor and to short the box of a second multiplexer. CONSTITUTION: A receiving band filter(210) includes one or more first inductor for attenuation. The first inductor has a lumped element, the form of a distributed line, and the form of a meander line. The receiving band filter includes one or more resonator. A transmission band filter(230) includes one or more second inductor. The transmission band filter includes one or more resonator. A meta material phase shifter(220) is located between the receiving band filter and the transmitting band filter.

Abstract translation: 目的：提供包括元材料相移器的多路复用器和多频带以制造小尺寸的多频带作为一个或多个电感器并且缩短第二多路复用器的盒子。 构成：接收带滤波器（210）包括用于衰减的一个或多个第一电感器。 第一电感器具有集总元件，分布线的形式和曲折线的形式。 接收带滤波器包括一个或多个谐振器。 传输带滤波器（230）包括一个或多个第二电感器。 传输带滤波器包括一个或多个谐振器。 元件材料移相器（220）位于接收带滤波器和发射带滤波器之间。

公开(公告)号：KR1020110013957A

公开(公告)日：2011-02-10

申请号：KR1020090071674

申请日：2009-08-04

Applicant: 삼성전자주식회사

Inventor： 박윤권 ,  송인상 ,  김덕환 ,  김철수 ,  신제식

IPC: H03H7/01

CPC classification number: H03H9/0095 ,  H03H9/0023 ,  H03H9/173 ,  H03H9/605

Abstract: PURPOSE: A dual-input dual-output filtering device using bulk acoustic wave resonator and resonance device used as the bulk acoustic wave resonator are provided to reduce the number of devices by arranging the dual-input dual-output filtering device on the following stage of an analog RF area. CONSTITUTION: A filtering device comprises a bridge(110) and a first ladder(120). The bridge comprises a first BAWR, a second BAWR, a third BAWR, and a fourth BAWR which are connected in series. The third BAWR is connected to an input stage of the first BAWR and an output stage of the second BAWR. The fourth BAWR is connected to the output stage of the first BAWR and an input stage of the second BAWR.

Abstract translation: 目的：提供使用体声波谐振器和谐振装置作为体声波谐振器的双输入双输出滤波装置，以通过将双输入双输出滤波装置布置在下一级上来减少装置数量 模拟RF区域。 构成：过滤装置包括桥（110）和第一梯（120）。 桥梁包括串联连接的第一个BAWR，第二个BAWR，第三个BAWR和第四个BAWR。 第三个BAWR连接到第一个BAWR的输入级和第二个BAWR的输出级。 第四个BAWR连接到第一个BAWR的输出级和第二个BAWR的输入级。

公开(公告)号：KR1020100136160A

公开(公告)日：2010-12-28

申请号：KR1020090054378

申请日：2009-06-18

Applicant: 삼성전자주식회사

Inventor： 김준철 ,  김동수 ,  김철수 ,  송인상 ,  김덕환 ,  박윤권 ,  신제식

IPC: H04B1/50

CPC classification number: H01P1/213 ,  H03H7/48 ,  H04B1/50

Abstract: PURPOSE: An RF front and module and a multiband communications module using the same are provided to constitute a front end by a diplexer and a bandpass filter thereby improving band attenuation characteristic. CONSTITUTION: A plurality of BPFs(Band Pass Filters)(211~215) passes the preset band signal. The plurality of BPFs is connected to a front end of at least one of diplexers(221~223). The at least one of diplexers includes a dual input port and a single output port. A rear end of two BPFs among a plurality of BPFs is connected to the dual input port. The degradation of the insertion loss characteristic is prevented.

Abstract translation: 目的：通过双工器和带通滤波器提供RF前端和模块以及使用该RF前端和多频段通信模块，以构成前端，从而提高频带衰减特性。 构成：多个BPF（带通滤波器）（211〜215）通过预设频带信号。 多个BPF连接到至少一个双工器（221〜223）的前端。 双工器中的至少一个包括双输入端口和单个输出端口。 多个BPF中的两个BPF的后端连接到双输入端口。 防止了插入损耗特性的劣化。

公开(公告)号：KR1020090081218A

公开(公告)日：2009-07-28

申请号：KR1020080007186

申请日：2008-01-23

Applicant: 삼성전자주식회사 ,  고려대학교 산학협력단

Inventor： 박윤권 ,  황성우 ,  신제식 ,  하병주 ,  이재성 ,  송인상 ,  김용규 ,  주병권 ,  김희태

IPC: H01L21/336 ,  H01L29/78 ,  B82Y40/00

CPC classification number: H01L29/0665 ,  B81B2201/0271 ,  B81C1/00142 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/49 ,  H01L29/78 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

Abstract: A resonance complex utilizing the wire of a resonant tunneling transistor and a resonance complex manufacturing method are provided to be easily usable in the various low power communications systems. A resonance complex comprises a first terminal(110), a second terminal(120), a wiring unit(130), a third terminal(150), and a potential barrier unit(140). The second terminal is faced with the first terminal. The wiring unit connects the first terminal and the second terminal interval. The wiring unit is resonated to the third terminal. The potential barrier unit is formed on the wiring unit. The potential barrier unit provides the negative resistance component.

Abstract translation: 提供了利用谐振隧道晶体管的导线和谐振复合体制造方法的谐振复合体，可以容易地用于各种低功率通信系统。 共振复合体包括第一端子（110），第二端子（120），布线单元（130），第三端子（150）和势垒单元（140）。 第二个终端面临第一个终端。 接线单元连接第一端子和第二端子间隔。 接线单元与第三端子谐振。 势垒单元形成在布线单元上。 势垒单元提供负电阻分量。

公开(公告)号：KR100631212B1

公开(公告)日：2006-10-04

申请号：KR1020050070303

申请日：2005-08-01

Applicant: 삼성전자주식회사

Inventor： 설상철 ,  김덕환 ,  김철수 ,  송인상 ,  신제식 ,  정규동 ,  이문철

IPC: H01P11/00 ,  H01P1/36

Abstract: A monolithic duplexer and a method of manufacturing the same are provided to secure the high isolation by suppressing an interference effect between devices integrated on the monolithic duplexer. Plural devices are spaced apart from each other on a predetermined region of a device wafer. A first sealing portion is formed on both sides of the device wafer, and a first ground surface is formed between the devices. A predetermined region on a cap wafer(40) is etched to form protrusions on both sides of the cap wafer and a ground post(42) between the protrusions. A second sealing portion(48) is formed under the protrusion, and second ground surfaces(46) are formed to enclose the ground post. A via(50) is formed vertically penetrate the cap wafer. The device wafer is connected to the cap wafer.

Abstract translation: 提供一种单片双工器及其制造方法，以通过抑制集成在单片双工器上的器件之间的干涉效应来确保高隔离度。 多个器件在器件晶片的预定区域上彼此间隔开。 第一密封部分形成在器件晶片的两侧，并且在器件之间形成第一接地表面。 蚀刻帽晶片（40）上的预定区域以在帽晶片的两侧形成突起，并在突起之间形成接地柱（42）。 第二密封部分（48）形成在突起下方，并且第二研磨表面（46）形成为包围地面柱。 通孔（50）形成为垂直穿透帽晶片。 器件晶片连接到帽晶片。