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公开(公告)号：JP2004158268A
公开(公告)日：2004-06-03
申请号：JP2002322007
申请日：2002-11-06
Inventor： SASAKI KOJI , TANAKA SADAO , YANASHIMA KATSUNORI , NARUI HIRONOBU , MEMESAWA SATOHIKO
Abstract: PROBLEM TO BE SOLVED: To provide a film forming device to form a film with a mask fixed on a main surface side of a substrate, wherein only a little force is required for peeling off the mask from the substrate, and the mask is easily attached and detached.
SOLUTION: The film forming device is equipped with: a substrate holding means 11; and a mask fixing means to fix the mask M having an opening pattern on the main surface side of the substrate W fixed and held by the substrate holding means 11. The device is used when the film is formed on the main surface side of the substrate W via the mask fixed by the mask fixing means, and characterized in that the substrate supporting surface 11a in the substrate holding means 11 is convexly curved.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2003347047A
公开(公告)日：2003-12-05
申请号：JP2002154101
申请日：2002-05-28
Inventor： NARUI HIRONOBU , HIRATA SHOJI , YANASHIMA KATSUNORI , MEMESAWA SATOHIKO , SASAKI KOJI
Abstract: PROBLEM TO BE SOLVED: To supply raw gas to the whole surface of a substrate when gasified organic raw material is supplied to the substrate.
SOLUTION: Diffusers 7a-7d for diffusing raw gas are installed in a film forming chamber 2. The substrate 3 is installed so as to face the diffusers 7a-7d. A substrate holder 4 holding the substrate 3 vertically holds the substrate 3 and slides the substrate 3 along a row of the diffusers 7. The raw gas diffused from the diffusers 7a-7d is supplied to the whole surface of the substrate 3.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：当气化的有机原料被供给到基板时，将原料气体供应到基板的整个表面。 解决方案：用于扩散原料气体的扩散器7a-7d安装在成膜室2中。基板3安装成面向扩散器7a-7d。 保持基板3的基板保持件4垂直地保持基板3并沿着一排扩散器7滑动基板3.从扩散器7a-7d扩散的原料气体被供给到基板3的整个表面。 版权所有（C）2004，JPO
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93.发明专利Semiconductor growth method and method of manufacturing semiconductor light emitting element 有权半导体生长方法及制造半导体发光元件的方法
公开(公告)号：JP2003298110A
公开(公告)日：2003-10-17
申请号：JP2003119604
申请日：2003-04-24
Inventor： KAWAI HIROHARU , IKEDA MASAO , NAKAMURA FUMIHIKO , HASHIMOTO SHIGEKI , ASAZUMA YASUNORI , YANASHIMA KATSUNORI
IPC: H01L21/205 , H01L33/32 , H01S5/323 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To enable an n-type AlGaN clad layer and a p-type AlGaN clad layer, which are both superior in quality, to grow so as to manufacture a high- performance semiconductor laser. SOLUTION: In a method of manufacturing a GaN semiconductor laser, the growth temperature of the p-type AlGaN clad layer is set lower than that of the n-type AlGaN clad layer, and the growth temperatures of the p-type AlGaN clad layer and the n-type AlGaN clad layer are set equal to that of a GaInN active layer or above and set at 980°C or below, e.g. 930 to 960°C. It is preferable that the surface of a base is covered with a p-type AlGaN cap layer which has been grown at the growth temperature nearly equal to that of the GaInN active layer or below before the p-type AlGaN clad layer is grown. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：为了使得质量优异的n型AlGaN包层和p型AlGaN包层生长以制造高性能半导体激光器。 解决方案：在制造GaN半导体激光器的方法中，将p型AlGaN包覆层的生长温度设定为低于n型AlGaN包覆层的生长温度，并且p型AlGaN的生长温度 将n型AlGaN覆盖层设定为等于GaInN有源层以上且设定在980℃以下，例如 930至960℃。 优选的是，在p型AlGaN覆盖层生长之前，在与GaInN有源层的生长温度几乎相同的生长温度下生长的p型AlGaN覆盖层覆盖基底的表面。 版权所有（C）2004，JPO
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公开(公告)号：JP2003055656A
公开(公告)日：2003-02-26
申请号：JP2001247188
申请日：2001-08-16
Inventor： YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element which can emit light with an optional wavelength; and a light-emitting apparatus which has a simple construction without the necessity for a vacuum state or high voltage and is not substantially degraded. SOLUTION: This light-emitting element has a semiconductor laminate structure of which the luminescent layer, which emits light by the excitation under the irradiation with ultraviolet rays, contains a group III-V compound represented by formula (I) Ba Alb Gac Ind Nw Asx Py Sbz (wherein a, b, c, d, w, x, y, and z satisfy the following equations: a+b+c+d=1; a,b,c,d>=0; w+x+y+z=1; and w,x,y,z>=0). The light-emitting apparatus has the emitter and an ultraviolet source comprising a semiconductor laser or a light-emitting diode.
Abstract translation: 要解决的问题：提供一种可以发射具有任选波长的光的发光元件; 以及具有简单结构而不需要真空状态或高电压且基本上不劣化的发光装置。 解决方案：该发光元件具有通过在紫外线照射下通过激发发光的发光层含有式（I）表示的III-V族化合物的半导体叠层结构Ba Alb Gac Ind Nw Asx Py Sbz（其中a，b，c，d，w，x，y和z满足以下等式：a + b + c + d = 1; a，b，c，d> = 0; w + x + y + z = 1; w，x，y，z> = 0）。 发光装置具有发射极和包含半导体激光器或发光二极管的紫外线源。
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95.发明专利Nitride semiconductor, semiconductor element, and method of manufacturing them 审中-公开氮化物半导体，半导体元件及其制造方法
公开(公告)号：JP2003017421A
公开(公告)日：2003-01-17
申请号：JP2002051583
申请日：2002-02-27
Inventor： GOTO OSAMU , ASANO TAKEHARU , TAKEYA MOTONOBU , YANASHIMA KATSUNORI , IKEDA MASAAKI , SHIBUYA KATSUYOSHI , SUZUKI YASUHIKO
IPC: C30B29/38 , H01L21/205 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor, having a large low-defect region on the surface and a semiconductor element using the same, and also to provide a method of manufacturing the nitride semiconductor which enables easy reduction of surface defects in a layer formation process using lateral growth technology, and to provide a method of manufacturing the semiconductor element using the nitride semiconductor. SOLUTION: On a substrate 100, a seed crystal section 105 is formed into a stripe geometry via a buffer layer 100a, and next, a crystal is grown from the seed crystal section 105 in two-stage growing conditions, to form a nitride semiconductor layer 107. In the first stage, a low-temperature growth section 107a, whose cross-sectional shape in the thickness direction is trapezoidal, is formed at a growing temperature of 1,030 deg.C, and in the second stage; a lateral growth is made to progress dominantly at a growing temperature of 1,070 deg.C, to form a high-temperature growth section 107b between the low-temperature growth sections 107a; consequently, on the surface of the nitride semiconductor layer 107, hillocks and normal lattice defects are reduced in sections which are higher than the low-temperature growth sections 107a.
Abstract translation: 要解决的问题：为了提供在表面上具有大的低缺陷区域的氮化物半导体和使用其的半导体元件，并且还提供一种制造氮化物半导体的方法，其能够容易地减少层中的表面缺陷 并且提供使用氮化物半导体制造半导体元件的方法。 解决方案：在基板100上，通过缓冲层100a将晶种部分105形成条纹几何形状，接着在两阶段生长条件下从籽晶部分105生长晶体，以形成氮化物半导体层 在第一阶段中，在1020℃的生长温度和第二阶段中形成厚度方向的横截面形状为梯形的低温生长部分107a; 在1070摄氏度的生长温度下横向生长主要进行，以在低温生长部分107a之间形成高温生长部分107b; 因此，在氮化物半导体层107的表面上，高于低温生长部分107a的部分中的小丘和正常的晶格缺陷减小。
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Patent Agency Ranking
公开(公告)号：JP2002334842A
公开(公告)日：2002-11-22
申请号：JP2001139437
申请日：2001-05-10
Applicant: SONY CORP
Inventor： YANASHIMA KATSUNORI , NAKAJIMA HIROSHI
IPC: H01L21/205 , H01S5/323
Abstract: PROBLEM TO BE SOLVED: To solve the problem, when semiconductor layers are formed by laterally growing the layers from a plurality of spots, of the meting sections of the layers not being neatly joining to each other on the atomic level and cause crystal defects, the crystallographic axes of the layers are deviated on the left and right sides of the joints, and the surfaces of the layers become rough due to stresses. SOLUTION: A method of manufacturing nitride semiconductor device includes a step of forming a mask layer 22, composed of a silicon oxide film having a plurality of openings 23 on a gallium nitride layer (first semiconductor layer) 11 formed on a substrate 10, and a step of laterally growing gallium nitride layers (second semiconductor layers) 12, along the surface of the gallium nitride layer 11 from the surfaces of the layer 11 exposed through the openings 23. The growth of one (12a) of the gallium nitride layers 12 is stopped, immediately before the layer 12a meets the adjacently grown other gallium nitride layer (12b) of the layers 12.
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公开(公告)号：JP2002303867A
公开(公告)日：2002-10-18
申请号：JP2001110659
申请日：2001-04-09
Applicant: SONY CORP
Inventor： YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a display device which has superior productivity, a wide field angle, and low power consumption, and is thin. SOLUTION: This device has a light emission part 10 including a semiconductor light emitting element which emits light of a prescribed wavelength, a shutter part 20 which controls the passage of the light emitted by the light emission part in pixel units, and a fluorescent body part 30 including fluorescent bodies 30R, 30G, and 30B which are excited with the light arriving from the light emission part 10 through the shutter part 20 to emit visible light.
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公开(公告)号：JP2001267691A
公开(公告)日：2001-09-28
申请号：JP2000404035
申请日：2000-12-08
Applicant: SONY CORP
Inventor： SHIBUYA KATSUYOSHI , ASANO TAKEHARU , KIJIMA SATORU , YANASHIMA KATSUNORI , TAKEYA MOTONOBU , IKEDA MASAO , HINO TOMOKIMI , YAMAGUCHI KYOJI , IKEDA MASAAKI , GOTO OSAMU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method for improving crystallization of nitride-based III-V group compound semiconductor on a sapphire substrate. SOLUTION: After a seed crystal layer 12 with a crystal part 12A made of nitride-based III-V group compound semiconductor crystal and an opening 12B is formed on a sapphire substrate, a recess 11B continuously joined to the opening 12B is formed in the sapphire substrate. An n-side contact layer 15 is grown from the crystal part 12A. As a result, a crystal grown sidewise from the crystal part 12A is prevented from being in contact with the sapphire substrate 11, and the n-side contact layer 15 and the nitride-based III-V group compound semiconductor crystal have a low density of through dislocation while a fluctuation in crystal orientation is made small.
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公开(公告)号：JP2000244070A
公开(公告)日：2000-09-08
申请号：JP4170899
申请日：1999-02-19
Applicant: SONY CORP
Inventor： HASHIMOTO SHIGEKI , YANASHIMA KATSUNORI , IKEDA MASAO
Abstract: PROBLEM TO BE SOLVED: To improve conductivity by making current easy to flow across a hetero interface in a semiconductor device or a semiconductor light-emitting element containing the hetero interface where two nitride III-V compound semiconductor layers different from each other are in contact with each other and a band discontinuity exists. SOLUTION: In a semiconductor device or a semiconductor light-emitting element containing a hetero interface where two nitride III-V compound semiconductor layers different from each other are in contact with each other and a band discontinuity exists, a superlattice layer or a composition gradient layer extinguishing or decreasing the band discontinuity falsely is inserted in the hetero interface. In a GaN semiconductor laser, an n-type AlGaN/GaN superlattice layer 5 or an n-type AlGaN graded layer is inserted in a hetero interface between an n-type GaN contact layer 4 and an n-type AlGaN clad layer 6, and a p-type AlGaN/GaN superlattice layer 12 or a p-type AlGaN graded layer is inserted in a hetero interface between a p-type AlGaN clad layer 11 and a p-type GaN contact layer 13.
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公开(公告)号：JPH1174203A
公开(公告)日：1999-03-16
申请号：JP16975998
申请日：1998-06-17
Applicant: SONY CORP
Inventor： ASAZUMA YASUNORI , HASHIMOTO SHIGEKI , NAKAMURA FUMIHIKO , YANASHIMA KATSUNORI , IKEDA MASAO
Abstract: PROBLEM TO BE SOLVED: To provide a method and device for growing a nitride III-V compound semiconductor which enables efficient growth of a nitride-based III-V compound semiconductor of high quality. SOLUTION: The pressure inside a reaction tube 1 of an MOCVD device is set at not less than 1.1 atm., particularly not less than 1.1 atm. and not more than 2 atm., preferably 1.2-1.8 atm., and a nitride-based III-V compound semiconductor, for example, GaN, InGaN or the like is grown. The reaction tube 1 is made of quartz glass so as to obtain sufficient strength for withstanding the difference between inner and outer pressures. The surface of a substrate 3 on which the nitride-based III-V compound semiconductor may face upward or downward.
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