Abstract:
A memory counter circuit, comprising a plurality of mutually connected counter stages (1a, 1), comprising:
an internal address bus (2) which is interfaced with each one of the counter stages (1a, 1) and is adapted to send an external address signal (18) to each one of the counter stages; means (19, 20) for loading the external address signal (18) onto the internal address bus (2); means (3) for enabling the connection between the internal bus (2) and each one of the counter stages (1a, 1), the means being driven by a true address latch enable signal (ALE); means (15) for generating the true address latch enable signal (ALE) starting from an external address latch signal (16) and a fast address latch enable signal (ALE-fast) which is adapted to drive the means (19, 20) for loading the external address (18) onto the internal address bus (2); and means (21) for generating clock signals (M-inc, S-inc) for synchronizing each one of the counter stages (1a, 1), the synchronization signals not being simultaneously active.
Abstract:
A multipurpose memory device suitable for a broader range of applications, whether requiring the reading of data in asynchronous mode with random access (as in a standard memory) or in synchronous sequential mode with sequential or burst type access, is capable of recognizing the mode of access and of reading that is currently required by the microprocessor and of self-conditioning its internal circuitry in function of such a recognition in order to read data in the requested mode without requiring the use of additional external control signals and/or implying a penalization in terms of access time and reading time compared to those which, for the same fabrication technology and state of the art design, may be attained with memory devices specifically designed for either one or the other mode of operation.