公开(公告)号：US20160200564A1

公开(公告)日：2016-07-14

申请号：US14993738

申请日：2016-01-12

Applicant: Sensirion AG

Inventor： David Pustan ,  Werner Hunziker

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81B2207/098 ,  B81C1/00158 ,  B81C1/0069 ,  G01N33/0009 ,  H01L23/3107 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sensor package comprises a carrier comprising a through hole, and a sensor chip with a front side and a back side and a recess in the back side. The sensor chip is attached to the carrier with its back side facing the carrier by means of an attachment layer thereby defining a first area of the carrier the sensor chip rests on and a second area of the carrier facing the recess. The through hole is arranged in the first area of the carrier.

Abstract translation: 传感器组件包括一个载体，该载体包括一个通孔，以及一个具有前侧和后侧的传感器芯片以及在后侧的凹槽。 传感器芯片通过附接层附接到载体上，其背面面向载体，从而限定传感器芯片搁置的载体的第一区域，并且载体的面向凹部的第二区域。 通孔布置在载体的第一区域中。

公开(公告)号：US20160165330A1

公开(公告)日：2016-06-09

申请号：US14856262

申请日：2015-09-16

Applicant: INVENSENSE, INC.

Inventor： Anthony D. Minervini ,  Kieran Harney ,  Aleksey S. Khenkin ,  Baris Cagdaser

IPC: H04R1/02 ,  H04R19/04 ,  G01K13/00 ,  H04R19/00

CPC classification number: H04R1/028 ,  B81B7/0087 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81B2207/012 ,  G01K13/00 ,  H04R19/005 ,  H04R19/04 ,  H04R2231/00

Abstract: Various embodiments provide for an integrated temperature sensor and microphone package where the temperature sensor is located in, over, or near an acoustic port associated with the microphone. This placement of the temperature sensor near the acoustic port enables the temperature sensor to more accurately determine the ambient air temperature and reduces heat island interference cause by heat associated with the integrated circuit. In an embodiment, the temperature sensor can be a thermocouple formed over a substrate, with the temperature sensing portion of the thermocouple formed over the acoustic port. In another embodiment, the temperature sensor can be formed on an application specific integrated circuit that extends into or over the acoustic port. In another embodiment, a thermally conductive channel in a substrate can be placed near the acoustic port to enable the temperature sensor to determine the ambient temperature via the channel.

Abstract translation: 各种实施例提供了一种集成温度传感器和麦克风封装，其中温度传感器位于与麦克风相关联的声学端口中，上方或附近。 温度传感器靠近声学端口的放置使得温度传感器能够更准确地确定环境空气温度并减少与集成电路相关联的热引起的热岛干扰。 在一个实施例中，温度传感器可以是形成在衬底上的热电偶，热电偶的温度感测部分形成在声学端口上。 在另一个实施例中，温度传感器可以形成在延伸到声学端口中或上方的专用集成电路上。 在另一个实施例中，衬底中的导热通道可以放置在声学端口附近，以使得温度传感器能够经由通道确定环境温度。

公开(公告)号：US20150377813A1

公开(公告)日：2015-12-31

申请号：US14725842

申请日：2015-05-29

Applicant: STMicroelectronics S.r.l.

Inventor： Pasquale Biancolillo ,  Angelo Recchia ,  Pasquale Franco ,  Antonio Cicero ,  Giuseppe Bruno

IPC: G01N27/18 ,  B81C1/00 ,  G01N33/00 ,  B81B7/00

CPC classification number: G01N27/18 ,  B81B7/02 ,  B81B7/04 ,  B81B2201/02 ,  B81B2201/0278 ,  G01N30/66 ,  G01N33/0027

Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.

Abstract translation: 半导体气体传感器装置包括由相对的第一和第二半导体衬底切片包围的第一腔体。 提供至少一个导电细丝以在第一腔上延伸，并且设置通道以允许气体进入第一腔。 传感器装置还可以包括被相对的第一和第二半导体衬底切片气密地包围的第二腔体。 提供至少另一个导电细丝以在第二腔上延伸。

公开(公告)号：US09222837B2

公开(公告)日：2015-12-29

申请号：US14412408

申请日：2013-01-21

Applicant: JIANGSU R&D CENTER FOR INTERNET OF THINGS

Inventor： Haiyang Mao ,  Wen Ou

IPC: H01L31/058 ,  G01J5/12 ,  G01J5/02 ,  B81B7/02 ,  B81C1/00 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

CPC classification number: G01J5/12 ,  B81B7/02 ,  B81B2201/0278 ,  B81C1/00111 ,  G01J5/022 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithically integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner.

Abstract translation: 本发明涉及黑色硅基MEMS热电堆IR检测器的结构和制造方法。 高性能黑色硅基MEMS热电堆IR检测器包括基板; 衬底上的释放阻挡带; 由释放阻挡带构成的热隔离腔; 位于热隔离腔正上方的黑色硅基红外吸收体; 围绕黑色硅基IR吸收体的侧面设置多个热电偶。 黑色硅基IR吸收体周围的热电堆串联电连接形成热电堆。 金属电极位于电连接的热电堆旁边，用于信号输出。 热电堆的冷接头通过第一导热电隔离结构连接到基板，热导体位于热隔离腔的侧面。 热电堆的热接头通过第二导热电隔离结构与IR吸收体接触，第二导热电隔离结构位于释放阻挡带上方。 这种检测器的结构简单，易于实现，也可以单片集成。 这种检测器具有高响应度和检测率，并且兼容CMOS，因此可以安全可靠地广泛使用。

公开(公告)号：US20140264659A1

公开(公告)日：2014-09-18

申请号：US14207443

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了具有多个传感器的运输装置，其被配置为检测和测量不同的感兴趣的参数。 运输装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 运输装置将待测量的第一参数直接耦合到直接传感器。 相反，运输装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到运输装置。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US08581357B2

公开(公告)日：2013-11-12

申请号：US12298320

申请日：2007-04-24

Applicant: Holger Vogt ,  Jochen Bauer

Inventor： Holger Vogt ,  Jochen Bauer

IPC: H01L31/0203

CPC classification number: B81C1/00269 ,  B81B2201/0278 ,  B81C2203/019 ,  G01J5/02 ,  G01J5/023 ,  G01J5/04 ,  G01J5/045 ,  G01J5/046 ,  G01J5/0875 ,  G01J5/20 ,  H01L27/14618 ,  H01L27/14649 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.

Abstract translation: 当在包括多个电路的基板的基板上，可以以更有效的方式制造包括电路的封装，这些电路的功能被测试，并且当功能电路连接时，通过在表面上包围电路的框架 的第二基板，其表面积小于第一基板的表面积。 基板通过第二框架连接，第二框架适于第一框架并且位于第二基板的表面上，使得第一和第二框架位于另一框架的顶部。 随后，功能封装电路可以以技术上简单的方式被分割。

公开(公告)号：US08569808B1

公开(公告)日：2013-10-29

申请号：US13441134

申请日：2012-04-06

Applicant: Tung-Tsun Chen ,  Chia-Hua Chu ,  Chung-Hsien Lin ,  Jui-Cheng Huang

Inventor： Tung-Tsun Chen ,  Chia-Hua Chu ,  Chung-Hsien Lin ,  Jui-Cheng Huang

IPC: H01L29/66

CPC classification number: H01L23/34 ,  B81B7/0096 ,  B81B2201/0278 ,  B81C1/0023 ,  H01L23/345 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops.

Abstract translation: 具有温度控制系统的半导体器件。 该装置的实施例可以包括包括具有专用第一温度控制回路的第一加热器和包括具有专用第二温度控制回路的第二加热器的CMOS芯片的MEMS芯片。 每个控制回路可以具有用于控制每个加热器的热输出的专用温度传感器。 第一加热器和传感器靠近MEMS芯片中的MEMS器件设置，用于直接加热MEMS芯片。 MEMS芯片和CMOS芯片的温度可以通过温度控制回路彼此独立控制。

公开(公告)号：US20130205899A1

公开(公告)日：2013-08-15

申请号：US13764780

申请日：2013-02-11

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Chang-Wen Wu ,  Jerwei Hsieh ,  Wu-Chen Yeh ,  Hung-Lin Yin ,  Huai-Wei Hsi

IPC: G01P1/00

CPC classification number: G01P1/00 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0278 ,  G01P15/0802 ,  G01P15/123

Abstract: A combo transducer includes a base, a proof mass, a membrane unit and a plurality of transducing components. The base is formed with an aperture. The proof mass is disposed in the aperture and has a surface that is formed with a cavity. The membrane unit includes a supporting part connected to the base, a covering part disposed to cover the surface of the proof mass, and a resilient linking part interconnecting the supporting part and the covering part such that the proof mass is movable relative to the base. The transducing components are disposed at the membrane unit. At least one of the transducing components is disposed at the covering part and is registered with the cavity.

Abstract translation: 组合传感器包括基座，检测质量块，膜单元和多个换能元件。 基座形成有孔。 检测体设置在孔中，并具有形成有空腔的表面。 膜单元包括连接到基座的支撑部分，设置成覆盖防弹块表面的覆盖部分和将支撑部分和覆盖部分互连的弹性连接部分，使得证明物质可相对于基部移动。 传感组件设置在膜单元处。 至少一个转换部件设置在覆盖部分并且与空腔配准。

公开(公告)号：US08057882B2

公开(公告)日：2011-11-15

申请号：US12225670

申请日：2007-03-28

Applicant: Takayuki Hirano ,  Nobuyuki Kawakami ,  Masato Kannaka

Inventor： Takayuki Hirano ,  Nobuyuki Kawakami ,  Masato Kannaka

IPC: B32B3/00 ,  G01P15/08 ,  G01L9/08 ,  G01F1/692

CPC classification number: G01F1/692 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0169 ,  B81C2201/0178 ,  C23C16/402 ,  C23C16/56 ,  Y10T428/24488 ,  Y10T428/24612

Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.

Abstract translation: 本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。

公开(公告)号：US20070215448A1

公开(公告)日：2007-09-20

申请号：US11378340

申请日：2006-03-20

Applicant: Alok Paranjpye ,  Jeffery Summers

Inventor： Alok Paranjpye ,  Jeffery Summers

IPC: H01H1/00 ,  H01H11/00

CPC classification number: B81B3/0024 ,  B81B2201/018 ,  B81B2201/0278 ,  H01H2037/008 ,  H01H2061/008 ,  Y10T29/49105 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/53248

Abstract: A MEMS thermal switch is disclosed which couples a hot, expanding beam to a cool flexor beam using a slideably engaged tether, and bends the cool, flexor beam by the expansion of the hot beam. A rigidly engaged tether ties the distal ends of the hot, expanding beam and the cool, flexor beam together, whereas the slideably engaged tether allows the hot, expanding beam to elongate with respect to the cool, flexor beam, without loading the slideably engaged tether with a large shear force. As a result, the material of the tether can be made stiffer, and therefore transmit the bending force of the hot, expanding beam more efficiently to the cool, flexor beam.

Abstract translation: 公开了一种MEMS热开关，其使用可滑动接合的系绳将热膨胀梁耦合到冷弯头梁，并且通过热梁的膨胀来弯曲冷弯曲梁。 刚性接合的系绳将热的，扩张的梁和冷的弯曲梁的远端连接在一起，而可滑动地接合的系绳允许热的，膨胀的梁相对于冷的屈肌梁而伸长，而不加载可滑动地接合的系绳 具有很大的剪切力。 结果，系链的材料可以变得更硬，并且因此将热膨胀梁的弯曲力更有效地传递到凉爽的弯曲梁。