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    DISPOSITIF DE CONVERSION D'ENERGIE MECANIQUE EN ENERGIE ELECTRIQUE
    93.
    发明公开
    DISPOSITIF DE CONVERSION D'ENERGIE MECANIQUE EN ENERGIE ELECTRIQUE 有权
    设备用于将机械振动能转化为电能

    公开(公告)号：EP2647120A1

    公开(公告)日：2013-10-09

    申请号：EP11788825.5

    申请日：2011-11-28

    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Inventor： BOISSEAU, Sébastien ,  DESPESSE, Ghislain

    IPC: H02N1/08 ,  B81B3/00

    CPC classification number: H02N1/002 ,  B81B3/0086 ,  B81B2201/0285 ,  H02N1/08 ,  Y10T29/49226

    Abstract: The invention relates to an energy conversion device (10), comprising: - first (20) and second (30) electrodes intended to be connected to the terminals of an electrical load (60); - an electret (40) placed opposite the first electrode (20), mounted movably with respect to the first electrode (20) according to a degree of freedom in a plane, so that a relative movement between the electret and the first electrode induces a difference in potential between the electrodes. Moreover: - the electret (40) comprises a continuous layer exhibiting a series of projections (42) extending along a direction (z) perpendicular to said plane, the projections being distributed with a pitch (P) which is smaller than the travel between the first electrode and the electret; - the first electrode (20) exhibits faces (21) opposite the electret, these faces being distributed with an identical pitch to the pitch of the projections of the electret.

    Vibration transducer and its manufacturing method
    94.
    发明公开
    Vibration transducer and its manufacturing method 有权
    Schwingungstransducer和Herstellungsverfahrendafür

    公开(公告)号：EP2428783A1

    公开(公告)日：2012-03-14

    申请号：EP11180829.1

    申请日：2011-09-09

    Applicant: Yokogawa Electric Corporation

    Inventor： Yoshida, Takashi

    IPC: G01L1/10 ,  G01L9/00

    CPC classification number: G01L9/0019 ,  B81B3/001 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2201/0285 ,  B81B2203/0118 ,  G01L1/106 ,  G01L9/0013 ,  H03H9/2457 ,  H03H2009/02496

    Abstract: A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.

    Abstract translation: 振动传感器包括设置在硅单晶衬底上的硅单晶振动束，所述振动束具有在与所述硅单晶衬底的表面垂直的方向上比在与其平行的方向上更长的截面形状， 由硅制成的外壳围绕着具有间隙的振动梁，与硅单晶基板一起形成真空室，与硅单晶基板的表面平行设置的板状的第一电极板，第一电极板具有 一端与振动束连接，板状的第二和第三电极板与硅单晶基板的表面平行设置，以便将振动光束插入其间彼此相对，并且形成在相对侧面上的凹凸 的振动束和第二和第三电极板。

    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR
    95.
    发明公开
    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR 有权
    VIBRATIONSSENSOR UND VERFAHREN ZUM HERSTELLEN DES VIBRATIONSSENSORS

    公开(公告)号：EP2073272A1

    公开(公告)日：2009-06-24

    申请号：EP07791105.5

    申请日：2007-07-20

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  HORIMOTO, Yasuhiro ,  KATO, Fumihito ,  MUNECHIKA, Masaki ,  WAKABAYASHI, Shuichi ,  TAKAHASHI, Toshiyuki ,  INUGA, Masayuki

    IPC: H01L29/84 ,  H01L21/306 ,  H04R19/04 ,  H04R31/00

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12).; When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

    Abstract translation: 在Si衬底（12）的前表面上形成SiO 2薄膜的保护膜（20），并且去除保护膜（20）的一部分以形成蚀刻窗口（22）。 在蚀刻窗（22）中形成多晶Si的牺牲层（23）。 从牺牲层（23）的顶部在Si衬底（12）的前表面上形成SiO 2的保护膜（24），并且作为由多晶Si形成的元件的薄膜（13）进一步形成在 保护膜（24）。 在Si衬底（12）的背侧上的保护膜（21）中打开背面蚀刻窗（26）。 Si衬底（12）浸泡在TMAH中以通过背面蚀刻窗（26）在Si衬底（12）中进行晶体各向异性蚀刻，以在Si衬底（12）中提供通孔（14）。 当牺牲层（23）暴露于通孔（14）的内部时，牺牲层（23）被蚀刻去除，以在保护膜（24）和Si衬底（24）之间提供间隙（19） 12）和Si衬底（12）的晶体各向异性蚀刻从其前侧和后侧进行。

    Method for manufacturing vibrating gyrosensor and vibrating element
    96.
    发明公开
    Method for manufacturing vibrating gyrosensor and vibrating element 有权
    Produktionsverfahren eines Vibrationskreiselsensors

    公开(公告)号：EP1696206A1

    公开(公告)日：2006-08-30

    申请号：EP06003942.7

    申请日：2006-02-27

    Applicant: SONY CORPORATION

    Inventor： Inaguma, Teruo Sony Corporation ,  Honda, Junichi Sony Corporation ,  Suzuki, Koji Sony Corporation ,  Takahashi, Kazuo Sony Corporation ,  Nakashio, Eiji Sony Corporation

    IPC: G01C19/56 ,  G01P9/04

    CPC classification number: B81B3/0067 ,  B81B2201/0285 ,  B81B2203/0118 ,  G01C19/5663 ,  G01P15/0802

    Abstract: A vibrating gyrosensor includes a support substrate on which a wiring pattern having a plurality of lands is formed, and a vibrating element mounted on a surface of the support substrate. The vibrating element includes a base part having a mounting surface on which a plurality of terminals, and a vibrator part integrally projected in a cantilever manner from one of the sides of the base part and having a substrate-facing surface coplanar with the mounting surface of the base part. The vibrator part has a first electrode layer, a piezoelectric layer, and a second electrode layer, which are formed on the substrate-facing surface in that order. Furthermore, a reinforcing part is formed at the base end of the vibrator part so that the sectional area of the vibrator part gradually increases toward the base part.

    Abstract translation: 振动陀螺传感器包括：支撑基板，其上形成有多个平台的布线图案;以及振动元件，安装在支撑基板的表面上。 所述振动元件包括基部，所述基部具有安装表面，多个端子和振动器部分以悬臂方式从所述基部的一个侧面整体地突出，并且具有与所述基板的安装表面共面的基板对向表面 的基础部分。 振子部分具有第一电极层，压电层和第二电极层，它们以依次形成在面向基板的表面上。 此外，在振子部的基端形成有加强部，使得振动部的截面积朝向基部逐渐增大。

    Vibration type transducer and manufacturing method thereof
    98.
    发明专利
    Vibration type transducer and manufacturing method thereof 有权
    振动式传感器及其制造方法

    公开(公告)号：JP2012058127A

    公开(公告)日：2012-03-22

    申请号：JP2010203032

    申请日：2010-09-10

    Applicant: Yokogawa Electric Corp ,  横河電機株式会社

    Inventor： YOSHIDA TAKASHI

    IPC: G01L9/00

    CPC classification number: G01L9/0019 ,  B81B3/001 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2201/0285 ,  B81B2203/0118 ,  G01L1/106 ,  G01L9/0013 ,  H03H9/2457 ,  H03H2009/02496

    Abstract: PROBLEM TO BE SOLVED: To achieve a vibration type transducer allowed to be highly accurately and inexpensively manufactured.SOLUTION: A vibration type transducer for measuring distortion applied to a vibration beam by measuring the resonance frequency of the vibration beam includes: a silicon monocrystal vibration beam arranged in a vacuum chamber, applying tension stress to a substrate and having a cross-sectional shape having longer cross-sectional thickness in a vertical direction to a substrate surface as compared with that in a direction parallel with the substrate surface; a tabular first electrode plate arranged in parallel with the substrate surface and connecting one end to the vibration beam; second and third electrode plates arranged opposite to each other through the vibration beam in parallel with the substrate surface and forming a one-plane shape parallel with the substrate surface together with the vibration beam and the first electrode plate; and rugged parts formed on the surfaces of side wall parts on which the vibration beam is opposed to the second and third electrode plates to prevent mutual adhesion between the vibration beam and the second and third electrode plates.

    Abstract translation: 要解决的问题：实现允许高精度和低成本地制造的振动型换能器。 解决方案：用于通过测量振动束的共振频率来测量施加到振动束的变形的振动型传感器包括：布置在真空室中的硅单晶振动束，向基板施加张力， 与平行于基板表面的方向相比，在与基板表面垂直的方向上具有较长横截面厚度的截面形状; 与基板表面平行布置并将一端连接到振动梁的平板状第一电极板; 第二电极板和第三电极板，其通过与所述基板表面平行的所述振动梁彼此相对布置，并与所述振动梁和所述第一电极板一起形成与所述基板表面平行的单平面形状; 以及形成在振动束与第二和第三电极板相对的侧壁部分的表面上的凹凸部分，以防止振动束与第二和第三电极板之间的相互粘附。 版权所有（C）2012，JPO＆INPIT

    Vibration sensor, and its manufacturing method
    100.
    发明专利
    Vibration sensor, and its manufacturing method 有权
    振动传感器及其制造方法

    公开(公告)号：JP2008098524A

    公开(公告)日：2008-04-24

    申请号：JP2006280648

    申请日：2006-10-13

    Applicant: Omron Corp ,  オムロン株式会社

    Inventor： KASAI TAKASHI ,  HORIMOTO TAKAHIRO ,  KATO FUMIHITO ,  MUNECHIKA MASANORI ,  WAKABAYASHI SHUICHI ,  TAKAHASHI TOSHIYUKI ,  INUGA MASAYUKI

    IPC: H01L29/84 ,  H01L21/306 ,  H04R19/04 ,  H04R31/00

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a vibration sensor which can form a through hole whose expansion on the back side is small in substrate etching from the back side by a combination of crystal anisotropic etching and isotropic etching.
    SOLUTION: A protection film 20 composed of an SiO
    2 film is formed on a surface of an Si substrate 12, and its part is removed to form a sacrificial layer 23 made up of polycrystal Si on an opened etching window 22. A protection film 24 composed of SiO
    2 is formed on the surface of Si substrate 12 over the sacrificial layer 23, and an element film 13 composed of polycrystal Si is formed on it. An etching window 26 of the back side is opened on a protection film 21 of the back side. The Si substrate 12 is immersed in TMAH to etch crystal-isotropically the Si substrate 12 through the etching window 26 of the back side, and a through hole 14 is formed on the Si substrate 12. When the sacrificial layer 23 is exposed in the through hole 14, the sacrificial layer 23 is removed by etching, then a clearance 19 is produced between the protection film 24 and Si substrate 12, and the Si substrate 12 is etched crystal-isotropically from both sides of surface and back.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种制造振动传感器的方法，该振动传感器可以通过结晶各向异性蚀刻和各向同性蚀刻的组合从背面形成通孔，该通孔在背面的基板蚀刻中的面积较小。 解决方案：在Si衬底12的表面上形成由SiO 2 膜构成的保护膜20，并且将其部分除去以形成由多晶Si构成的牺牲层23 一个开放的蚀刻窗口22.在牺牲层23上的Si衬底12的表面上形成由SiO 2 组成的保护膜24，并且在其上形成由多晶Si构成的元件膜13。 后侧的蚀刻窗26在后侧的保护膜21上打开。 将Si衬底12浸入TMAH中以通过背面的蚀刻窗26对Si衬底12进行各向同性的蚀刻，并且在Si衬底12上形成通孔14.当牺牲层23暴露于通孔 通过蚀刻去除牺牲层23，然后在保护膜24和Si衬底12之间产生间隙19，并且从表面和背面的两侧向各向同性地蚀刻Si衬底12。 版权所有（C）2008，JPO＆INPIT

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