Method for memorizing membership functions and a fuzzy processor implementing the same
    109.
    发明公开
    Method for memorizing membership functions and a fuzzy processor implementing the same 失效
    甲用于存储隶属函数的方法和用于执行该方法的模糊逻辑处理器

    公开(公告)号:EP0831394A1

    公开(公告)日:1998-03-25

    申请号:EP96830090.5

    申请日:1996-02-29

    CPC classification number: G06N7/04

    Abstract: In a method, according to the invention, of storing one or more natural membership functions (MF-k) of respectively one or more natural variables (X-i) being each defined within a natural universe (UD-i) of discourse having a lowest natural value (LL-i) and a highest natural value (HK-i), the natural membership functions (MF-k) are normalized through respective normalization coefficients (NC-i) so that they are defined within the same predetermined absolute universe (UDA) of discourse having a lowest absolute value (LLA) and a highest absolute value (HLA), thereby obtaining one or more absolute membership functions (MFA), respectively, and said absolute membership functions (MFA) and said normalization coefficients (NC-i) are stored, taking account that identical absolute membership functions are stored only once.

    Abstract translation: 在一个方法中,雅丁本发明,存储的分别的一个或多个天然可变(Xi)的一种或多种天然隶属函数(MF-k)的被每一个自然宇宙中定义(UDⅰ)话语的具有最低自然 值(LL-i)和一个最高天然值(HK-i)中,天然隶属函数(MF-K)是通过respectivement归一化系数归一化的(NC-ⅰ)这样GDP是可以相同的预定绝对宇宙中定义(UDA )具有最低绝对值(LLA)和具有最高绝对值(HLA),从而分别获得一个或多个绝对隶属函数(MFA),以及所述话语的绝对隶属函数(MFA)和所述归一化系数(NC-i的 )存储,并考虑做相同的绝对隶属函数只存储一次。

    "> An integrated device in an
    110.
    发明公开
    An integrated device in an "emitter switching" configuration and with a cellular structure 失效
    Integriertes Bauteil在Emitterschalteranordnung und mit einer zellularen Struktur

    公开(公告)号:EP0810662A1

    公开(公告)日:1997-12-03

    申请号:EP96830306.5

    申请日:1996-05-29

    CPC classification number: H01L27/0825

    Abstract: An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.

    Abstract translation: 集成器件包括集成在半导体材料的芯片(400)中的发射极切换配置中的高压晶体管和低压晶体管,该芯片(400)包括掩埋P型区域(120)和相应的P型接触区域 405),其限定了形成低压晶体管的半导体材料的一部分。 接触区域(405)具有将半导体材料的该部分分成多个单元(410)的网络结构,其中每个单元具有元素P型基极区域(425)和元素N型发射极 低压晶体管的区域(430)。 各种电池(410)的元件区域(425)和(430)通过表面金属触点彼此电连接。

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