公开(公告)号：FR2842829A1

公开(公告)日：2004-01-30

申请号：FR0209458

申请日：2002-07-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  H01L21/28 ,  H01L29/51 ,  B32B18/00

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula Hf xZr tAl y) zand their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：FR2839060A3

公开(公告)日：2003-10-31

申请号：FR0205455

申请日：2002-04-30

Applicant: MEMSCAP

Inventor： KATILA PEKKA

IPC: B81B3/00 ,  B81B7/02 ,  G02B6/26 ,  G02B6/35 ,  G02B26/02

Abstract: The variable optical attenuator (1) comprises the micro-electro-mechanical (MEM) structures implemented on a substrate (9) including the input and output channels (2,3) aligned along an axis (7) and designed to receive the input and output optical fibres (4,5), respectively, and a shutter (10) which can be translated in a controlled manner in a space between the input and output channels (2,3) perpendicular to the axis (7) by an actuator (6) constituted of two matching combs (13,14). The face (20) of the shutter (10) on the side of the input channel has an inclination of about 45 degrees with respect to the direction of displacement of the shutter along its beam (11) axis (15). The two faces (20,21) of the shutter (10) situated on the sides of the input and output channels (2,3), respectively, have non-null inclinations with respect to the direction of displacement of the shutter, the two faces are symmetric with respect to the axis of displacement, and the inclination is preferentially about 45 degrees. The input light beam (30) from the core (8) of the input fibre (4) reaches the shutter (10), but only a light beam fraction (31) reaches the output fibre (5). The other light beam fraction (32) is reflected from the face (20) of the shutter and is propagated outside the space between the channels (2,3).

公开(公告)号：FR2838422A1

公开(公告)日：2003-10-17

申请号：FR0204519

申请日：2002-04-11

Applicant: MEMSCAP

Inventor： DEHAN CHRISTOPHE

IPC: B81C1/00 ,  H01L21/00

Abstract: The method comprises the steps of preparing the wafers of a substrate, the steps of transforming the wafers of the substrate allowing to define the micro-electro-mechanical structures within the same substrate, and the later steps of processing the wafers or the fractions of wafers of the substrate including the micro-electro-mechanical structures. At the start of the steps of transforming the wafers or the fractions of wafers of the substrate, and also eventual supplementary elements susceptible to come in contact with the wafers or the fractions of wafers of the substrate, are placed on support organs; and the support organs are placed in containers for transport and storage ensuring a protection with respect to particulate contamination and electrostatic discharges. The containers for transport and storage are of type closed case. The storage containers are of type Front Opening Universal Pod (FOUP), which can ensure the transport of the wafers of the substrate of 300 mm, and also of type Standard Mechanical InterFace (SMIF) cases for the wafers of size 150-200 mm. The dimensions of the support organs are analogous to those of the wafers of the substrate which can be stored in the containers for transport and storage. The substrate is for example of semiconductor material, glass, quartz, or other material.

公开(公告)号：FR2837623A1

公开(公告)日：2003-09-26

申请号：FR0203444

申请日：2002-03-20

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：CA2420308A1

公开(公告)日：2003-08-27

申请号：CA2420308

申请日：2003-02-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L29/51 ,  H01L27/00 ,  H01L21/71

Abstract: Micro-composant électronique (1) réalisé à partir d'un substrat (2), et incorporant une structure capacitive réalisée au-dessus du dernier niveau de métallisati on (3) apparent réalisé dans le substrat, ladite structure capacitive comportant de ux électrodes (31,45), caractérisé en ce qu'une des électrodes (31) comporte un ensemble de lamelles (25,26) superposées et décalées de l'une à l'autre par rapport à un tronc central (27), l'autre électrode (45) comportant deux ensembles de lamelles (40,41), les lamelles (40,41) de chacun de ces ensembles étant intercalées entre les lamelles (25,26) de la première électrode (31) en étant reliées entre elles par une paroi commune (42,43), les deux parois commune (42,43) étant elles- mêmes reliées (44) par dessus la première électrode (31).

公开(公告)号：FR2832852A1

公开(公告)日：2003-05-30

申请号：FR0115456

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08 ,  H01F17/00

Abstract: Electronic component incorporating inductive microcomponent is fabricated by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate; (ii) depositing layer forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.

公开(公告)号：FR2811135B1

公开(公告)日：2002-11-22

申请号：FR0008413

申请日：2000-06-29

Applicant: MEMSCAP

Inventor： FEDELI JEAN MARC ,  GUILLON BERTRAND

IPC: H01F1/14 ,  H01F3/14 ,  H01F17/00 ,  H01F17/04 ,  H01F27/245 ,  H01F27/34 ,  H01F19/04

Abstract: Inductive microcomponent (1), such as a microinductor or microtransformer, comprising a metal winding (2) having the shape of a solenoid and a magnetic core (4) made of a ferromagnetic material positioned at the center of the solenoid (2), wherein the core (4) consists of several sections (13-16) separated by cutouts (17-19) oriented parallel to the main axis (20) of the solenoid (4).

公开(公告)号：CA2363304A1

公开(公告)日：2002-05-20

申请号：CA2363304

申请日：2001-11-15

Applicant: MEMSCAP

Inventor： GUILLON BERTRAND ,  BLONDY PIERRE

IPC: H01G7/00 ,  H01G5/00 ,  H01G5/06 ,  H01G5/16 ,  H01G5/38

Abstract: Microcomposant incluant un composant capacitif, caractérisé en ce que l e composant capacitif est constitué d'au moins deux condensateurs élémentaires C1, C2, C3, C4,) connectés en série, chaque condensateur élémentaire comportant deux armatures, à savoir : .cndot. une armature fixe (10) par rapport au reste du microcomposant ; .cndot. une seconde armature (12) dont une partie est apte à se déplacer par rapport à la première armature fixe (10) sous l'action d'un signal de commande, de manière à faire varier la valeur de la capacité du condensateur élémentaire C1, et en ce que les signaux de commande des différents condensateurs élémentair es sont générés indépendamment de manière à faire varier la capacité globale du condensateur par une variation indépendante des capacités de chaque condensateur élémentaire.

公开(公告)号：CA2358282A1

公开(公告)日：2002-04-24

申请号：CA2358282

申请日：2001-10-04

Applicant: MEMSCAP

Inventor： BLONDY PIERRE ,  GUILLON BERTRAND

IPC: H01P1/20 ,  H01P1/203 ,  H01P7/00 ,  H01P7/08 ,  H03J1/00 ,  H03H9/02 ,  H03H9/46

Abstract: Résonateur électrique élémentaire (1), caractérisé en ce qu'il comprend ~ un ruban conducteur (2) formant une boucle plane à au moins un tour, dont les extrémités forment deux segments parallèles (3, 4); ~ un pont conducteur (6) formant une arche enjambant lesdits segments (3, 4) du ruban conducteur (2), les surfaces en regard de l'arche (6) et desdits segments (3, 4) formant une capacité, et dans lequel une partie (7) du pont (6) est apte à se déplacer par rapport auxdits segments (3, 4) de la boucle sous l'action d'un signal de commande de manièr e à faire varier la valeur de ladite capacité, et donc la fréquence d'accord du résonateur.

公开(公告)号：FR2812756A1

公开(公告)日：2002-02-08

申请号：FR0010360

申请日：2000-08-04

Applicant: MEMSCAP

Inventor： FEDELI JEAN MARC ,  GUILLON BERTRAND

IPC: H01F17/00 ,  H01F17/04 ,  H01F27/34 ,  H01F41/04 ,  H01F27/25