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公开(公告)号：KR1020110067609A
公开(公告)日：2011-06-22
申请号：KR1020090124268
申请日：2009-12-14
Applicant: 삼성전자주식회사
IPC: H01P7/08
CPC classification number: H01P1/20345 , H01P7/00 , H01P7/08
Abstract: PURPOSE: A high efficiency resonator for transmitting power by wireless is provided to reduce the size of a resonator by including an independent resonance frequency. CONSTITUTION: A plurality of transmission line sheets are parallel arranged on a transmission line unit(210). The transmission line unit has a parallel type conductor loss. A capacitor(220) is inserted into the specific position of the transmission line. A magnetic core passes through the transmission line unit.
Abstract translation: 目的：提供一种用于通过无线发射功率的高效谐振器，通过包括独立的谐振频率来减小谐振器的尺寸。 构成：在传输线路单元（210）上平行布置多条传输线路。 传输线单元具有并联型导体损耗。 电容器（220）插入到传输线的特定位置。 磁芯通过传输线单元。
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公开(公告)号：KR1020100112070A
公开(公告)日：2010-10-18
申请号：KR1020100010272
申请日：2010-02-04
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/31144 , H01L21/324
Abstract: PURPOSE: A method for forming an amorphous carbon film and a method for forming patterns using the same are provided to manufacture a semiconductor device including fine patterns using an amorphous carbon film with the superior planarity as a hard mask film. CONSTITUTION: A susceptor(12) is located in a depositing chamber(10) in order to support a substrate. A guide ring(14) is located on the edge side of the susceptor in order to guide the substrate. A heater(16) is located in the susceptor. A shower head(18) is located to be opposite with the susceptor and is connected with a depositing gas supplying unit(22) which is located on the outside of the depositing chamber. High frequency power(20) is connected with the shower head.
Abstract translation: 目的：提供一种形成非晶碳膜的方法和使用其形成图案的方法，以制造具有使用具有优异平面度的非晶碳膜作为硬掩模膜的精细图案的半导体器件。 构成：为了支撑衬底，感受体（12）位于沉积室（10）中。 引导环（14）位于基座的边缘侧，以引导基板。 加热器（16）位于基座中。 淋浴头（18）位于与基座相对的位置，并与位于沉积室外侧的沉积气体供应单元（22）连接。 高频电源（20）与喷头连接。
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公开(公告)号：KR1020100075070A
公开(公告)日：2010-07-02
申请号：KR1020080133677
申请日：2008-12-24
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/24 , H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/1683
Abstract: PURPOSE: A method for manufacturing a nonvolatile memory device is provided to reduce power consumption by reducing a contact area between a variable resistor pattern and a lower electrode. CONSTITUTION: A first sacrificial film pattern(130) including a first opening unit is formed on a lower insulation layer(120). A second sacrificial film pattern(140) with a second opening unit is formed on the lower insulation layer and the first sacrificial film pattern. The second opening unit crosses the first opening unit. The lower insulation film pattern including a contact hole defined by the cross region of the first and second opening units is formed by etching the lower insulation layer using the first and second sacrificial film patterns. A bottom electrode is formed on the contact hole. A variable resistor pattern connected to the upper side of the bottom electrode is formed on the lower insulation film pattern.
Abstract translation: 目的：提供一种用于制造非易失性存储器件的方法，通过减小可变电阻器图案和下电极之间的接触面积来降低功耗。 构成：在下绝缘层（120）上形成包括第一开口单元的第一牺牲膜图案（130）。 具有第二开口单元的第二牺牲膜图案（140）形成在下绝缘层和第一牺牲膜图案上。 第二打开单元穿过第一打开单元。 通过使用第一和第二牺牲膜图案蚀刻下绝缘层来形成包括由第一和第二开口单元的交叉区域限定的接触孔的下部绝缘膜图案。 底部电极形成在接触孔上。 连接到底部电极的上侧的可变电阻器图案形成在下部绝缘膜图案上。
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公开(公告)号：KR1020100075015A
公开(公告)日：2010-07-02
申请号：KR1020080133609
申请日：2008-12-24
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/1683 , H01L45/143
Abstract: PURPOSE: A method for manufacturing a nonvolatile memory device is provided to reduce power consumption by decreasing a contact area between a bottom electrode and a variable resistor pattern. CONSTITUTION: A first sacrificial film pattern including a first opening unit is formed on a lower insulation film. A pre lower insulation film pattern including a recess(125) is formed by using the first sacrificial film pattern. A second sacrificial film pattern(122) with a second opening unit is formed on the pre lower insulation film pattern and the first sacrificial film pattern. The lower insulation film pattern with a plurality of contact holes(127) is completed by using the first and second sacrificial film patterns. The plurality of contact holes is separated with each other on the recess. The contact hole is extended to the lower side of the lower insulation film pattern. A bottom electrode is formed inside the contact hole.
Abstract translation: 目的：提供一种用于制造非易失性存储器件的方法，通过减小底部电极和可变电阻器图案之间的接触面积来降低功耗。 构成：在下绝缘膜上形成包括第一开口单元的第一牺牲膜图案。 通过使用第一牺牲膜图案形成包括凹部（125）的预降低绝缘膜图案。 具有第二开口单元的第二牺牲膜图案（122）形成在预下绝缘膜图案和第一牺牲膜图案上。 通过使用第一和第二牺牲膜图案来完成具有多个接触孔（127）的下部绝缘膜图案。 多个接触孔在凹部上彼此分离。 接触孔延伸到下绝缘膜图案的下侧。 底部电极形成在接触孔的内部。
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公开(公告)号：KR1020090120119A
公开(公告)日：2009-11-24
申请号：KR1020080046000
申请日：2008-05-19
Applicant: 삼성전자주식회사
IPC: H01L29/78
CPC classification number: H01L29/4234 , H01L27/11568 , H01L27/11573 , H01L29/792
Abstract: PURPOSE: A fine transistor and a method for manufacturing the same are provided to make a manufacturing process simple by forming a space through a round etching and forming a SONOS cell using a charge trap layer. CONSTITUTION: In a fine transistor and a method for manufacturing the same, a tunnel oxide film is formed on a semiconductor substrate(100). A nitride film and a passivation are formed on the tunnel oxide film(110), and the passivation is pattern and is used as a mask to etch the nitride film, and charge trapping layers(123) which are separated from each other. A blocking insulation film(124) is formed on a formed nitride film, and an electrode is formed on the blocking oxide film and the tunnel oxide film.
Abstract translation: 目的：提供精细晶体管及其制造方法，以通过圆形蚀刻形成空间并使用电荷陷阱层形成SONOS电池来简化制造工艺。 构成：在微细晶体管及其制造方法中，在半导体衬底（100）上形成隧道氧化膜。 在隧道氧化膜（110）上形成氮化物膜和钝化层，并且钝化是图案，并用作掩模以蚀刻氮化物膜，并对彼此分离的电荷俘获层（123）进行充电。 在形成的氮化物膜上形成阻挡绝缘膜（124），并且在阻挡氧化膜和隧道氧化物膜上形成电极。
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Patent Agency Ranking
公开(公告)号：KR100905570B1
公开(公告)日：2009-07-02
申请号：KR1020050010326
申请日：2005-02-04
Applicant: 삼성전자주식회사
CPC classification number: H04L12/1877 , H04L1/0057 , H04L1/0071 , H04L1/0078 , H04L12/189 , H04W72/005
Abstract: 본 발명은 이동통신 시스템에서 방송 서비스를 수신하기 위한 장치 및 방법에 관한 것으로, 특히 부호분할 다중접속(CDMA : Code Division Multiple Access)이동통신 시스템에서 리드-솔로몬 부호를 사용하는 방송 서비스를 수신하기 위한 장치 및 방법에 관한 것이다.
본 발명에 따른 방법은, 방송 서비스를 제공하는 이동통신 시스템에서 방송 파라미터 메시지 제공 방법으로서, 상기 제공되는 방송 서비스가 TDM될 시 이를 지시하는 필드를 설정하고, 상기 시스템에서 제공되는 각 서브 버퍼에 상기 방송 서비스의 위치를 알리는 필드를 설정하며, 상기 하나의 서브 버퍼가 하나의 서비스로 구성되는지 여부를 알리는 필드와 상기 필드의 유효성을 알리는 필드를 설정하고, 하나의 서브 버퍼에 저장되는 실제 방송 서비스 데이터만을 지시하는 필드를 설정하여 상기 방송 파라미터 메시지를 생성하는 과정과, 상기 방송 파라미터 메시지를 변조하여 방송 서비스를 수신하는 단말로 제공하는 과정을 포함한다.
방송 서비스, 이동통신 시스템, 방송 서비스 파라미터.-
公开(公告)号：KR100903547B1
公开(公告)日：2009-06-23
申请号：KR1020070044564
申请日：2007-05-08
Applicant: 삼성전자주식회사
IPC: H04B1/40
Abstract: 본 발명은 이동통신 단말기 및 그의 사용 제한 방법에 관한 것으로, 특히 사용자의 식별을 통해 확인된 정보에 따라 단말기를 제한적으로 사용할 수 있는 이동통신 단말기 및 그의 사용 제한 방법에 관한 것이다.
이를 위하여 본 발명은 이동통신 단말기에 사용 요청이 입력되는 사용 요청 과정과, 상기 사용 요청을 입력한 현재 사용자를 식별하는 식별 과정과, 상기 식별 결과에 따라 상기 사용자가 속하는 그룹을 선정하는 그룹 선정 과정, 및 선정된 상기 그룹에 상응하는 설정 정보에 따라 상기 이동통신 단말기를 운용하는 운용 과정을 포함하는 것을 특징으로 하는 이동통신 단말기 및 그의 사용 제한 방법을 제공한다. 이에 따르면, 사용자에 따라 제한적으로 이동통신 단말기의 사용이 가능하므로, 이동통신 단말기가 타인에게 노출되거나 조작되더라도, 개인적인 정보가 쉽게 노출되는 것을 방지할 수 있다.
이동통신 단말기, 카메라, 안면 인식, 사용자 식별, 사용자 그룹-
公开(公告)号：KR100884237B1
公开(公告)日：2009-02-17
申请号：KR1020070020420
申请日：2007-02-28
Applicant: 삼성전자주식회사
IPC: G06F13/38
Abstract: An apparatus and method for receiving data in a communication system including a communication module and a memory. The communication module may compress data received from an external system by using a first data compression/decompression block, and may transfer the compressed data to the data bus. The memory may decompress the compressed data received from the data bus using the second data compression/decompression block, and may store the decompressed data in the memory. Also, the memory may compress data to be transmitted using the second data compression/decompression block and may transfer the compressed data to the data bus. The communication module may decompress the compressed data received from the data bus using the first data compression/decompression block, and may transmit the decompressed data to the external system.
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公开(公告)号：KR1020080099009A
公开(公告)日：2008-11-12
申请号：KR1020070044564
申请日：2007-05-08
Applicant: 삼성전자주식회사
IPC: H04B1/40
CPC classification number: H04M1/72577 , H04M1/0241 , H04M1/274533 , H04M1/667 , H04M2250/52
Abstract: A mobile communication terminal and a method of restricting use of the terminal are provided to enable a user to use only functions, menus and contents permitted in a corresponding group. A method for restricting the use of a mobile communication terminal comprises the following steps of: grouping all records, which are registered in the phone book database stored in the terminal as one or more groups; inputting a request for the use to the mobile communication terminal(S11); discriminating the user who inputted the request(S13); selecting a group to which the user belongs according to the discriminated result(S14); and operating the terminal according to setup information corresponding to the selected group.
Abstract translation: 提供移动通信终端和限制终端使用的方法，以使用户只能使用相应组中允许的功能，菜单和内容。 一种用于限制移动通信终端的使用的方法包括以下步骤：将存储在终端中的电话簿数据库中登记的所有记录分组为一个或多个组; 向移动通信终端输入使用请求（S11）; 区分输入请求的用户（S13）; 根据识别结果选择用户所属的组（S14）; 以及根据与所选择的组对应的设置信息来操作终端。
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公开(公告)号：KR1020080051483A
公开(公告)日：2008-06-11
申请号：KR1020060122693
申请日：2006-12-06
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/66765 , H01L21/3065 , H01L29/78609
Abstract: A method of manufacturing a thin film transistor substrate is provided to decrease off-current of the transistor by decreasing a leakage current at an off-state of the transistor. A gate electrode(120) is formed on a substrate(110), and then a gate insulating layer(130) and an active thin film are deposited on the substrate having the gate electrode. A photoresist pattern is formed in an active layer forming region on the active thin film. The active thin film is primarily etched by using a gas comprising SF6 and Cl2 by using the photoresist pattern as an etch mask, and then is secondarily etched by using a Cl2 gas to form an active layer. A source electrode(160) and a drain electrode(165) are formed on the active layer.
Abstract translation: 提供制造薄膜晶体管基板的方法，以通过减小晶体管截止状态下的漏电流来减小晶体管的截止电流。 在基板（110）上形成栅电极（120），然后在具有栅电极的基板上沉积栅极绝缘层（130）和有源薄膜。 光致抗蚀剂图案形成在有源薄膜上的有源层形成区域中。 通过使用光致抗蚀剂图案作为蚀刻掩模，通过使用包含SF 6和Cl 2的气体来主要蚀刻有源薄膜，然后通过使用Cl 2气体二次蚀刻以形成活性层。 源极电极（160）和漏电极（165）形成在有源层上。
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