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公开(公告)号：US11143972B2
公开(公告)日：2021-10-12
申请号：US16178638
申请日：2018-11-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US11106142B2
公开(公告)日：2021-08-31
申请号：US16733890
申请日：2020-01-03
Applicant: ASML NETHERLANDS B.V.
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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公开(公告)号：US11022902B2
公开(公告)日：2021-06-01
申请号：US16623647
申请日：2018-05-14
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Den Boef , Patricius Aloysius Jacobus Tinnemans , Haico Victor Kok , William Peter Van Drent , Sebastianus Adrianus Goorden
Abstract: The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.
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公开(公告)号：US10996570B2
公开(公告)日：2021-05-04
申请号：US16594613
申请日：2019-10-07
Applicant: ASML Netherlands B.V.
Inventor： Zili Zhou , Nitesh Pandey , Olger Victor Zwier , Patrick Warnaar , Maurits Van Der Schaar , Elliott Gerard McNamara , Arie Jeffrey Den Boef , Paul Christiaan Hinnen , Murat Bozkurt , Joost Jeroen Ottens , Kaustuve Bhattacharyya , Michael Kubis
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号：US20210124276A1
公开(公告)日：2021-04-29
申请号：US17254601
申请日：2019-06-05
Applicant: ASML Netherlands B.V.
Inventor： Sebastianus Adrianus Goorden , Simon Reinald Huisman , Duygu Akbulut , Alessandro Polo , Johannes Antonius Gerardus Akkermans , Arie Jeffrey Den Boef
IPC: G03F9/00
Abstract: The invention provides a position sensor (300) which comprises an optical system (305, 306) configured to provide measurement radiation (304) to a substrate (307). The optical system is arranged to receive at least a portion of radiation (309) diffracted by a mark (308) provided on the substrate. A processor (313) is applied to derive at least one position-sensitive signal (312) from the received radiation. The measurement radiation comprises at least a first and a second selected radiation wavelength. The selection of the at least first and second radiation wavelengths is based on a position error swing-curve model.
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Patent Agency Ranking
106.发明授权公开(公告)号：US10859923B2
公开(公告)日：2020-12-08
申请号：US16792267
申请日：2020-02-16
Applicant: ASML Netherlands B.V.
Inventor： Gonzalo Roberto Sanguinetti , Murat Bozkurt , Maurits Van Der Schaar , Arie Jeffrey Den Boef
Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
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公开(公告)号：US10775704B2
公开(公告)日：2020-09-15
申请号：US16524323
申请日：2019-07-29
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Arie Jeffrey Den Boef , Marinus Johannes Maria Van Dam
Abstract: A scatterometer performs diffraction based measurements of one or more parameters of a target structure. To make two-color measurements in parallel, the structure is illuminated simultaneously with first radiation (302) having a first wavelength and a first angular distribution and with second radiation (304) having a second wavelength and a second angular distribution. The collection path (CP) includes a segmented wavelength-selective filter (21, 310) arranged to transmit wanted higher order portions of the diffracted first radiation (302X, 302Y) and of the diffracted second radiation (304X, 304Y), while simultaneously blocking zero order portions (302″, 304″) of both the first radiation and second radiation. The illumination path (IP) in one embodiment includes a matching segmented wavelength-selective filter (13, 300), oriented such that a zero order ray passing through the illumination optical system and the collection optical system will be blocked by one of said filters or the other, depending on its wavelength.
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公开(公告)号：US10579772B2
公开(公告)日：2020-03-03
申请号：US15996992
申请日：2018-06-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David Fouquet , Bernardo Kastrup , Arie Jeffrey Den Boef , Johannes Catharinus Hubertus Mulkens , James Benedict Kavanagh , James Patrick Koonmen , Neal Patrick Callan
Abstract: A computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
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公开(公告)号：US10527957B2
公开(公告)日：2020-01-07
申请号：US15778517
申请日：2016-10-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Cayetano Sanchez-Fabres Cobaleda , Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Arie Jeffrey Den Boef , Marcel Hendrikus Maria Beems , Piotr Michał Stolarz
Abstract: A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.
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公开(公告)号：US10527953B2
公开(公告)日：2020-01-07
申请号：US15706625
申请日：2017-09-15
Applicant: ASML NETHERLANDS B.V.
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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