公开(公告)号：US11094502B2

公开(公告)日：2021-08-17

申请号：US16064193

申请日：2016-12-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Bernardo Kastrup ,  Johannes Catharinus Hubertus Mulkens ,  Marinus Aart Van Den Brink ,  Jozef Petrus Henricus Benschop ,  Erwin Paul Smakman ,  Tamara Druzhinina ,  Coen Adrianus Verschuren

IPC: H01J37/26 ,  H01J37/15 ,  H01J37/02 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

公开(公告)号：US20200218849A1

公开(公告)日：2020-07-09

申请号：US16804048

申请日：2020-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F30/398 ,  H01L21/66 ,  G03F7/20 ,  G06F30/20 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US09507907B2

公开(公告)日：2016-11-29

申请号：US14730993

申请日：2015-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; and determining or predicting, using the actual value, an existence, a probability of existence, a characteristic, or a combination selected therefrom, of a defect produced from the hot spot with the device manufacturing process.

Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 并且使用实际值确定或预测由设备制造过程产生的缺陷产生的缺陷的存在，存在概率，特征或其选择的组合。

公开(公告)号：US10579772B2

公开(公告)日：2020-03-03

申请号：US15996992

申请日：2018-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F17/50 ,  H01L21/66 ,  G06N7/00 ,  G03F7/20

Abstract: A computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US12067340B2

公开(公告)日：2024-08-20

申请号：US17389682

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F7/00 ,  G03F7/00 ,  G06F30/20 ,  G06F30/398 ,  G06N7/01 ,  H01L21/66

CPC classification number: G06F30/398 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F30/20 ,  G06N7/01 ,  H01L22/20

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC: G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US11875966B2

公开(公告)日：2024-01-16

申请号：US17403006

申请日：2021-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Bernardo Kastrup ,  Johannes Catharinus Hubertus Mulkens ,  Marinus Aart Van Den Brink ,  Jozef Petrus Henricus Benschop ,  Erwin Paul Smakman ,  Tamara Druzhinina ,  Coen Adrianus Verschuren

IPC: H01J37/26 ,  H01J37/15 ,  H01J37/02 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/263 ,  H01J37/023 ,  H01J37/15 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0245 ,  H01J2237/2817

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

公开(公告)号：US11080459B2

公开(公告)日：2021-08-03

申请号：US16804048

申请日：2020-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F30/398 ,  H01L21/66 ,  G03F7/20 ,  G06F30/20 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US09990462B2

公开(公告)日：2018-06-05

申请号：US15339669

申请日：2016-10-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20 ,  G06N7/00

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.