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    SPHERICAL ABERRATION CORRECTION MODERATING TYPE LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROSCOPY DEVICE, AND OPTICAL ELECTRON MICROSCOPE
    103.
    发明公开
    SPHERICAL ABERRATION CORRECTION MODERATING TYPE LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROSCOPY DEVICE, AND OPTICAL ELECTRON MICROSCOPE 有权
    DELAY镜头的球面像差的矫正，有校正球面像差，电子光谱装置及照片电子显微镜透镜系统

    公开(公告)号：EP2058834A1

    公开(公告)日：2009-05-13

    申请号：EP07791379.6

    申请日：2007-07-26

    Applicant: National University Corporation Nara Institute of Science and Technology

    Inventor： MATSUDA, Hiroyuki ,  DAIMON, Hiroshi

    IPC: H01J37/153 ,  H01J37/12 ,  H01J37/285

    CPC classification number: H01J37/12 ,  H01J37/252 ,  H01J2237/05 ,  H01J2237/153 ,  H01J2237/1532 ,  H01J2237/244 ,  H01J2237/2511 ,  H01J2237/2538

    Abstract: A spherical aberration correction decelerating lens corrects a spherical aberration occurring in an electron beam or an ion beam (hereinafter, referred to as "beam") emitted from a predetermined object plane position with a certain divergence angle, and said spherical aberration correction decelerating lens comprises at least two electrodes, each of which is constituted of a surface of a solid of revolution whose central axis coincides with an optical axis and each of which receives an intentionally set voltage applied by an external power supply, wherein at least one of the electrodes includes one or more meshes (M) which has a concaved shape opposite to an object plane (P0) and which is constituted of a surface of a solid of revolution so that a central axis of the concaved shape coincides with the optical axis, and a voltage applied to each of the electrodes causes the beam to be decelerated and causes formation of a decelerating convergence field for correcting the spherical aberration occurring in the beam. This makes it possible to provide a spherical aberration correction decelerating lens which converges a beam, emitted from the sample and having high energy and a large divergence angle, onto an image plane.

    Abstract translation: 球面像差校正减速透镜校正球面像差在电子束或离子束从以一定的发散角的预定对象平面位置发出的光（通过向称为“束”后开始，）发生状况，并且所述球面像差校正减速透镜包括 至少两个电极，每个的所有其构成的旋转实体，其中心轴的的一个表面的与光轴一致，并且每个都接收到有意设定的电压由外部电源施加，worin所述电极中的至少一个包括 一个或多个网格（M）其中在目标平面（P0）具有形状相反的凹到和所有其构成的旋转体的表面的这样做的凹入形状的中心轴与光轴和电压一致 施加到每个电极的使光束被减速，并且使形成的减速会聚磁场的矫正球面Aberra 重刑的光束发生的。 这使得有可能提供一种球面像差校正透镜减速会聚的光束，从样品和具有高能量和大的发散角射出到图像平面上。

    IMPROVED PARALLEL ION OPTICS AND APPARATUS FOR HIGH CURRENT LOW ENERGY ION BEAMS
    104.
    发明公开
    IMPROVED PARALLEL ION OPTICS AND APPARATUS FOR HIGH CURRENT LOW ENERGY ION BEAMS 失效
    平行离子光学器件和高功率，低能量离子束

    公开(公告)号：EP0846190A1

    公开(公告)日：1998-06-10

    申请号：EP96924274.0

    申请日：1996-06-12

    Applicant: MASSIVELY PARALLEL INSTRUMENTS, INC.

    Inventor： KIRCHNER, Nicholas, J. ,  GUTMAN, Felix, G. ,  ALEXANDROV, Oleg, V. ,  DYNIN, Efim, A.

    IPC: H01J37 ,  C23C14 ,  H01J49

    CPC classification number: H01J49/4235 ,  C23C14/221 ,  C23C14/48 ,  H01J37/3007 ,  H01J49/009 ,  H01J2237/0041 ,  H01J2237/05 ,  H01J2237/317

    Abstract: A device (1700) for the parallel processing of ions is provided. The device may be utilized for thin film deposition or ion implantation and may include the following: an ion source (1702), ion capture (1704) and storage ion optics (1708), mass selection ion optics (1706), neutral trapping elements, extraction ion optics, beam neutralization mechanisms, and a substrate on which deposition and thin film growth occurs is provided. Ions are captured and stored within a closely packed array of parallel ion conducting channels. The ion conductive channels transport high current low energy ions from the ion source to irradiate the substrate target. During transport, ion species can be mass selected, merged with ions from multiple sources, and undergo gas phase charge exchange ion molecule reactions. Additionally, neutrals from the ion source, ion-molecule reaction reagent gases, residual background gas, or neutralization of ions may be eliminated from the processing stream by turbo pumping, cryo pumping, and cryocondensation on some of the ion optic elements. Different types of ion optic elements, including elements which are parallel or perpendicular to the ion path, and neutral trapping elements may be combined in different ways to achieve thin film ion deposition over a large homogeneous substrate surface.

    이온 주입장치
    106.
    发明公开
    이온 주입장치 有权
    离子植入装置

    公开(公告)号：KR1020080092964A

    公开(公告)日：2008-10-16

    申请号：KR1020087020076

    申请日：2007-02-15

    Applicant: 가부시키가이샤 아루박

    Inventor： 오가타세이지 ,  후쿠이료타 ,  요코오히데카즈 ,  니시하시츠토무

    IPC: H01L21/265 ,  H01J37/30

    CPC classification number: H01J37/3171 ,  H01J2237/05 ,  H01J2237/083 ,  H01J2237/31703

    Abstract: Provided is a small ion implanting apparatus for manufacturing single crystalline films, with stable parallelism of ion beams and high controllability of density distribution. The ion implanting apparatus extracts hydrogen ions or rare gas ions from an ion source (12), desired ions (B) are selected from a first fan-shaped electromagnet (14), the ions (B) are scanned by a scanner (16), the ions (B) are parallelized by a second fan-shaped electromagnet (18) and implanted into a substrate (20), and a single crystalline film is manufactured. The ion source (12) is arranged in the vicinity of an inlet side focal point (F1) of the first fan-shaped electromagnet (14). When the opening of the extracting section of the ion source (12) is made circular and that a deflection plane in the first fan-shaped electromagnet (14) matches with the inlet side focal point on a plane vertical to the deflection plane, the spot shape of the ion beam (B) after passing through the first fan-shaped electromagnet (14) becomes circular and completely parallel on the two planes.

    Abstract translation: 提供了一种用于制造单晶膜的小型离子注入装置，具有稳定的离子束平行度和高密度分布的可控性。 离子注入装置从离子源（12）提取氢离子或稀有气体离子，从第一扇形电磁体（14）中选择所需的离子（B），离子（B）由扫描仪（16）扫描， ，离子（B）由第二扇形电磁体（18）平行化并注入到基板（20）中，制造单晶膜。 离子源（12）布置在第一扇形电磁体（14）的入口侧焦点（F1）附近。 当离子源（12）的提取部分的开口被制成圆形并且第一扇形电磁体（14）中的偏转平面与垂直于偏转平面的平面上的入口侧焦点匹配时，该点 在通过第一扇形电磁体（14）之后离子束（B）的形状在两个平面上变为圆形并完全平行。

    Ion source gas injection beam shaping
    107.
    发明授权
    Ion source gas injection beam shaping 有权

    公开(公告)号：US11769648B2

    公开(公告)日：2023-09-26

    申请号：US17513245

    申请日：2021-10-28

    Applicant: Applied Materials, Inc.

    Inventor： Adam M. McLaughlin

    IPC: H01J37/08 ,  H01J37/317

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/05

    Abstract: An ion source for extracting a ribbon ion beam with improved height uniformity is disclosed. Gas nozzles are disposed in the chamber proximate the extraction aperture. The gas that is introduced near the extraction aperture serves to shape the ribbon ion beam as it is being extracted. For example, the height of the ribbon ion beam may be reduced by injecting gas above and below the ion beam so as to compress the extracted ion beam in the height direction. In some embodiments, the feedgas is introduced near the extraction aperture. In other embodiments, a shield gas, such as an inert gas, is introduced near the extraction aperture.

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