Abstract:
A wide field scanning laser obstacle awareness system (LOAS) comprises: a plurality of first optical elements configured to directa portion of a pulsed laser beam generated by a light source to a light detector, and to direct the pulsed laser beam to a beam expander wherein the pulsed laser beam is expanded; and at least one rotationally operated second optical element for directing the expanded pulsed laser beam from the system with a predetermined pattern scanned azimuthally over a wide field, the at least one rotationally operated second optical element also for receiving reflections of the pulsed laser beam from at least one object along the predetermined pattern and directing them to the laser beam expander wherein the laser beam reflections are focused: the plurality of first optical elements also configured to direct the focusedlaser beam reflections to the light detector for use in determining the location of the at least one object.
Abstract:
A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO 2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.
Abstract:
A liquid level indicator (14) used for determining liquid levels in a sealed container (10) includes a heat source (24) bonded to the container (10), a first temperature sensor (26) mounted on the container (10) adjacent the heat source (24), and a second temperature sensor (28) mounted on the container (10) spaced from the heat source (24). The temperatures at the first and second temperature sensors are sensed while the heat source (24) is operating, and the differential in the temperatures is measured and used to control power to the heat source (10). Changes in the differential in temperature between the first (26) and second (28) temperature sensors indicates when the heat conductivity between the first (26) and second (28) temperature sensors changes, due to presence or absence of a liquid in the container (10) at the level of the temperature sensors (26, 28).
Abstract:
A smart probe system (10) for an aircraft receives an input from a heated total air temperature sensor (24). When on the ground, the heater (28) for the total air temperature probe (24) is cycled so that when a preselected temperature is indicated by the temperature sensing element (30) in the total air temperature probe (24), the heater power is turned off, and as the total air temperature probe (24) cools, changes in indicated temperature from the temperature sensing element (30) are measured and the changes analyzed and used for determining outside air temperature. The outside air temperature can be calculated by determining the rate of change in the temperature while the probe (24) cools. A complimentary method is to determine when the indicated temperature stabilizes, after the heater (28) is turned off, and deriving outside air temerature from the stabilized temperature signal from the temperature sensing element (30).
Abstract:
An air data probe (10) such as a pitot probe, pitot-static probe, or total air temperature probe incorporates heaters (42) within the wall (30) of the device. The heater (42) is in the wall (30) of the probe (10) and extends from the base (12) of the probe (10) to the tip (18) of the probe (10) and surrounds a sampling chamber (24) in the probe (10) in a spiral pattern.
Abstract:
Systems and methods for detecting ice particle accumulation is disclosed herein. In one exemplary implementation, a method for detecting ice is described in which a parameter within an interior volume of a heated conduit is measured. The method also includes detecting the presence of an accumulation of ice particles based on the parameter measured within the interior volume of the heated conduit.
Abstract:
Systems and methods for detecting ice particle accumulation is disclosed herein. In one exemplary implementation, a method for detecting ice is described in which a parameter within an interior volume of a heated conduit is measured. The method also includes detecting the presence of an accumulation of ice particles based on the parameter measured within the interior volume of the heated conduit.
Abstract:
A macroscopic mirror for wide angle scanning applications comprises: a silicon substrate section of a predetermined shape and macroscopic size cut from a silicon wafer comprising a flat, polished surface side and an etched, rough surface side; and a plurality of layers, including a layer of reflective medium, disposed on the flat, polished surface of the substrate section in such a manner to minimize flexural distortion of the flat surface. The macroscopic mirror is made by a method comprising the steps of: preparing the silicon wafer by polishing one side to a predetermined flatness and etching the other side to a predetermined roughness; cutting the substrate section from the prepared silicon wafer to a predetermined shape and macroscopic size; and applying the plurality of layers on the flat, polished surface.
Abstract:
A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about -600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.
Abstract:
A method of determining accurately and expeditiously the frequency of a coherent signal from an incoming electrical signal is disclosed. The method comprises the steps of: generating a time sequence of sampled data signals from the incoming electrical signal, detecting the coherent signal in the time sequence of sampled data signals and generating a frequency estimate thereof; and determining the frequency of the detected coherent signal based on a function of the frequency estimate and a time segment of sampled data signals associated with the coherent signal. A system for performing the same is also disclosed.