WIDE FIELD SCANNING LASER OBSTACLE AWARENESS SYSTEM
    111.
    发明申请
    WIDE FIELD SCANNING LASER OBSTACLE AWARENESS SYSTEM 审中-公开
    宽场扫描激光障碍识别系统

    公开(公告)号:WO2003021291A1

    公开(公告)日:2003-03-13

    申请号:PCT/US2002/022901

    申请日:2002-07-18

    Abstract: A wide field scanning laser obstacle awareness system (LOAS) comprises: a plurality of first optical elements configured to directa portion of a pulsed laser beam generated by a light source to a light detector, and to direct the pulsed laser beam to a beam expander wherein the pulsed laser beam is expanded; and at least one rotationally operated second optical element for directing the expanded pulsed laser beam from the system with a predetermined pattern scanned azimuthally over a wide field, the at least one rotationally operated second optical element also for receiving reflections of the pulsed laser beam from at least one object along the predetermined pattern and directing them to the laser beam expander wherein the laser beam reflections are focused: the plurality of first optical elements also configured to direct the focusedlaser beam reflections to the light detector for use in determining the location of the at least one object.

    Abstract translation: 宽场扫描激光障碍物识别系统(LOAS)包括:多个第一光学元件,其被配置为将由光源产生的脉冲激光束的一部分引导到光检测器,并将脉冲激光束引导到光束扩展器,其中 脉冲激光束扩大; 以及至少一个旋转操作的第二光学元件,用于以宽广的场方位扫描的预定图案将来自系统的扩展的脉冲激光束引导,所述至少一个旋转操作的第二光学元件还用于接收脉冲激光束从 沿着预定图案的至少一个物体并且将它们引导到激光束扩展器,其中激光束反射被聚焦:多个第一光学元件还被配置为将聚焦激光束反射引导到光检测器,以用于确定at 至少一个对象。

    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER
    112.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER 审中-公开
    在氧化物层上制造包含SIC的半导体结构的方法

    公开(公告)号:WO2003017358A1

    公开(公告)日:2003-02-27

    申请号:PCT/US2002/022826

    申请日:2002-07-17

    CPC classification number: H01L21/76254 H01L21/7602 Y10S438/931

    Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO 2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

    Abstract translation: 制备半导体结构的方法包括:(a)提供第一材料,其包括(i)包含硅的第一晶片,(ii)通过将硅的一部分转化为SiC而获得的至少一个SiC转换层,(iii) 至少一层非原生SiC施加到转化层,和(iv)施加到非本征SiC层的至少一个氧化物层; (b)在非本地SiC层的区域中注入离子,由此在其中建立限定非本征SiC层的第一部分和非本征SiC层的第二部分的植入区域; (c)提供至少一种附加材料,其包括(i)包含硅的第二晶片,和(ii)施加到所述第二晶片的表面的氧化物层; (d)将第一材料的氧化物层和材料的氧化物层粘合以提供第一材料和第二材料的组合; 和(e)在植入区域处分离非本地SiC层的第二部分与非本征SiC层的第一部分以提供。 所得的半导体结构包括可以是Si晶片的基底晶片,可以与基底晶片相邻的SiO 2的绝缘氧化物层和非本征SiC的有源顶层。 半导体结构可用于制造集成的电子设备,压力传感器,温度传感器或其他可用于诸如飞机发动机的高温环境中的仪器。

    METHOD TO NON-INTRUSIVELY MEASURE THE LEVEL OF LIQUID IN A SEALED CONTAINER
    113.
    发明申请
    METHOD TO NON-INTRUSIVELY MEASURE THE LEVEL OF LIQUID IN A SEALED CONTAINER 审中-公开
    方法非侵入性地测量密封容器中液体的含量

    公开(公告)号:WO2002068915A1

    公开(公告)日:2002-09-06

    申请号:PCT/US2002/003375

    申请日:2002-02-06

    CPC classification number: G01F23/247 G01F23/22

    Abstract: A liquid level indicator (14) used for determining liquid levels in a sealed container (10) includes a heat source (24) bonded to the container (10), a first temperature sensor (26) mounted on the container (10) adjacent the heat source (24), and a second temperature sensor (28) mounted on the container (10) spaced from the heat source (24). The temperatures at the first and second temperature sensors are sensed while the heat source (24) is operating, and the differential in the temperatures is measured and used to control power to the heat source (10). Changes in the differential in temperature between the first (26) and second (28) temperature sensors indicates when the heat conductivity between the first (26) and second (28) temperature sensors changes, due to presence or absence of a liquid in the container (10) at the level of the temperature sensors (26, 28).

    Abstract translation: 用于确定密封容器(10)中的液面的液面指示器(14)包括结合到容器(10)的热源(24),安装在容器(10)上的第一温度传感器(26) 热源(24)和安装在与热源(24)间隔开的容器(10)上的第二温度传感器(28)。 在热源(24)工作时感测第一温度传感器和第二温度传感器的温度,并且测量温度差并用于控制热源(10)的功率。 第一温度传感器(26)和第二温度传感器(28)之间温度差的变化表明,由于容器中存在或不存在液体,第一温度传感器(26)和第二温度传感器(28)之间的热传导率发生变化 (10)在所述温度传感器(26,28)的水平面上。

    INTEGRATED TOTAL TEMPERATURE PROBE SYSTEM
    114.
    发明申请
    INTEGRATED TOTAL TEMPERATURE PROBE SYSTEM 审中-公开
    整体温度探针系统

    公开(公告)号:WO0142751A2

    公开(公告)日:2001-06-14

    申请号:PCT/US0042705

    申请日:2000-12-08

    CPC classification number: G01K13/028 G01K13/02

    Abstract: A smart probe system (10) for an aircraft receives an input from a heated total air temperature sensor (24). When on the ground, the heater (28) for the total air temperature probe (24) is cycled so that when a preselected temperature is indicated by the temperature sensing element (30) in the total air temperature probe (24), the heater power is turned off, and as the total air temperature probe (24) cools, changes in indicated temperature from the temperature sensing element (30) are measured and the changes analyzed and used for determining outside air temperature. The outside air temperature can be calculated by determining the rate of change in the temperature while the probe (24) cools. A complimentary method is to determine when the indicated temperature stabilizes, after the heater (28) is turned off, and deriving outside air temerature from the stabilized temperature signal from the temperature sensing element (30).

    Abstract translation: 用于飞机的智能探测系统(10)接收来自加热的总空气温度传感器(24)的输入。 当在地面上时,用于总空气温度探测器(24)的加热器(28)被循环,使得当在总空气温度探测器(24)中由温度感测元件(30)指示预选温度时,加热器功率 被关闭,并且当总空气温度探测器(24)冷却时,测量来自温度感测元件(30)的指示温度的变化并分析变化并用于确定外部空气温度。 外部空气温度可以通过确定探头(24)冷却时温度的变化率来计算。 一种免费的方法是在加热器(28)关闭之后确定指示温度何时稳定,并根据来自温度感测元件(30)的稳定温度信号导出外部空气温度。

    HEATED AIR DATA PROBE
    115.
    发明申请
    HEATED AIR DATA PROBE 审中-公开
    加热空气数据探头

    公开(公告)号:WO1998016837A1

    公开(公告)日:1998-04-23

    申请号:PCT/US1997018895

    申请日:1997-10-14

    CPC classification number: G01P5/165 G01P5/14

    Abstract: An air data probe (10) such as a pitot probe, pitot-static probe, or total air temperature probe incorporates heaters (42) within the wall (30) of the device. The heater (42) is in the wall (30) of the probe (10) and extends from the base (12) of the probe (10) to the tip (18) of the probe (10) and surrounds a sampling chamber (24) in the probe (10) in a spiral pattern.

    Abstract translation: 诸如皮托管探针,皮托静力探针或总空气温度探针之类的空气数据探测器(10)在该装置的壁(30)内包括加热器(42)。 加热器(42)位于探针(10)的壁(30)中并且从探针(10)的基部(12)延伸到探针(10)的尖端(18)并且围绕采样室 24)在螺旋图案中的探针(10)中。

    SILICON WAFER BASED MACROSCOPIC MIRROR FOR WIDE ANGLE SCANNING APPLICATIONS
    118.
    发明申请
    SILICON WAFER BASED MACROSCOPIC MIRROR FOR WIDE ANGLE SCANNING APPLICATIONS 审中-公开
    用于宽角度扫描应用的基于硅波的宏观镜

    公开(公告)号:WO2005036217A2

    公开(公告)日:2005-04-21

    申请号:PCT/US2004/014359

    申请日:2004-05-07

    Abstract: A macroscopic mirror for wide angle scanning applications comprises: a silicon substrate section of a predetermined shape and macroscopic size cut from a silicon wafer comprising a flat, polished surface side and an etched, rough surface side; and a plurality of layers, including a layer of reflective medium, disposed on the flat, polished surface of the substrate section in such a manner to minimize flexural distortion of the flat surface. The macroscopic mirror is made by a method comprising the steps of: preparing the silicon wafer by polishing one side to a predetermined flatness and etching the other side to a predetermined roughness; cutting the substrate section from the prepared silicon wafer to a predetermined shape and macroscopic size; and applying the plurality of layers on the flat, polished surface.

    Abstract translation: 用于广角扫描应用的宏观镜包括:从硅晶片切割出预定形状和宏观尺寸的硅衬底部分,其包括平坦抛光表面侧和蚀刻的粗糙表面侧; 以及包括反射介质层的多个层,以使得平坦表面的弯曲变形最小化的方式设置在基板部分的平坦抛光表面上。 宏观镜是通过以下步骤制成的:通过将一侧抛光至预定的平面度并将另一侧蚀刻到预定的粗糙度来制备硅晶片; 将衬底部分从所制备的硅晶片切割成预定形状和宏观尺寸; 以及将所述多个层施加在所述平坦抛光表面上。

    MICRO MIRROR STRUCTURE WITH FLAT REFLECTIVE COATING
    119.
    发明申请
    MICRO MIRROR STRUCTURE WITH FLAT REFLECTIVE COATING 审中-公开
    具有平面反射涂层的微型镜面结构

    公开(公告)号:WO2004029692A3

    公开(公告)日:2004-05-21

    申请号:PCT/US0329076

    申请日:2003-09-16

    Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about -600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

    Abstract translation: 一种微镜结构,包括多个可单独移动的镜子。 每个镜子在大约20摄氏度的温度下从顶部视角具有大致凹形的形状,并且在大约85摄氏度的温度下从顶部视角具有大致凸形的形状。 在一个实施例中,曲率半径在约20摄氏度的温度下可以大于约500mm,并且在约10微米的厚度下在约85摄氏度的温度下可以小于约-600mm。 在另一个实施例中,本发明是一种微反射镜结构,其包括以阵列布置的多个单独可移动的反射镜。 每个反射镜包括衬底,位于衬底上方的扩散阻挡层以及位于扩散阻挡层上方的反射层。 扩散阻挡层通常限制顶部反射层通过扩散阻挡层的扩散。

    SYSTEM AND METHOD OF DETERMINING THE FREQUENCY OF A COHERENT BURST SIGNAL
    120.
    发明申请
    SYSTEM AND METHOD OF DETERMINING THE FREQUENCY OF A COHERENT BURST SIGNAL 审中-公开
    确定相干爆发信号频率的系统和方法

    公开(公告)号:WO0201245A3

    公开(公告)日:2002-06-27

    申请号:PCT/US0141107

    申请日:2001-06-22

    Inventor: MACK ANDREW PAUL

    CPC classification number: G01J11/00 G01S7/4804

    Abstract: A method of determining accurately and expeditiously the frequency of a coherent signal from an incoming electrical signal is disclosed. The method comprises the steps of: generating a time sequence of sampled data signals from the incoming electrical signal, detecting the coherent signal in the time sequence of sampled data signals and generating a frequency estimate thereof; and determining the frequency of the detected coherent signal based on a function of the frequency estimate and a time segment of sampled data signals associated with the coherent signal. A system for performing the same is also disclosed.

    Abstract translation: 公开了一种精确且迅速地确定来自输入电信号的相干信号的频率的方法。 该方法包括以下步骤:从输入电信号生成采样数据信号的时间序列,检测采样数据信号的时间序列中的相干信号并生成其频率估计; 以及基于频率估计的函数和与相干信号相关联的采样数据信号的时间段来确定检测到的相干信号的频率。 还公开了用于执行该系统的系统。

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