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公开(公告)号：KR102036825B1
公开(公告)日：2019-10-24
申请号：KR1020180046340
申请日：2018-04-20
Applicant: 전자부품연구원
IPC: H01L23/522 , H01L23/367 , H01L23/498 , H01L23/31
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公开(公告)号：KR101924258B1
公开(公告)日：2019-02-22
申请号：KR1020160065262
申请日：2016-05-27
Applicant: 전자부품연구원
IPC: H01L23/373 , H01L23/367 , H01L23/488 , H01L23/482
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公开(公告)号：KR101764761B1
公开(公告)日：2017-08-04
申请号：KR1020150126058
申请日：2015-09-07
Applicant: 전자부품연구원
Abstract: 본발명은수동소자및 그제조방법에관한것이다. 본발명에따른인덕터는기판의일면상에형성된인덕터박막패턴과, 상기인덕터박막패턴을둘러싸면서상기인덕터박막패턴에대응되도록상기기판에형성된트렌치(trench) 및상기트렌치와상기기판및 상기인덕터박막패턴상에형성된절연층을포함하고, 상기기판의타면은상기트렌치에형성된절연층이노출되도록연마되어있는것을특징으로한다. 본발명에따르면, 유손실(lossy) 실리콘기판기반의수동소자에있어서, 인접소자로의전기적누설의통로를원천적으로차단하여전기적손실을차단하고고주파영역에서의전기적특성을크게향상시킬수 있다.
Abstract translation: 本发明涉及一种无源元件及其制造方法。 根据本发明的电感器包括形成在衬底的表面上的电感器薄膜图案，形成在衬底中以便与电感器薄膜图案相对应同时围绕电感器薄膜图案的沟槽， 并且抛光衬底的另一表面以暴露在沟槽上形成的绝缘层。 根据本发明，在基于有损硅衬底的无源元件中，到相邻元件的电泄漏路径基本上被阻挡，由此防止电损耗并大大改善高频区域中的电特性。
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公开(公告)号：KR1020170029126A
公开(公告)日：2017-03-15
申请号：KR1020150126058
申请日：2015-09-07
Applicant: 전자부품연구원
Abstract: 본발명은수동소자및 그제조방법에관한것이다. 본발명에따른인덕터는기판의일면상에형성된인덕터박막패턴과, 상기인덕터박막패턴을둘러싸면서상기인덕터박막패턴에대응되도록상기기판에형성된트렌치(trench) 및상기트렌치와상기기판및 상기인덕터박막패턴상에형성된절연층을포함하고, 상기기판의타면은상기트렌치에형성된절연층이노출되도록연마되어있는것을특징으로한다. 본발명에따르면, 유손실(lossy) 실리콘기판기반의수동소자에있어서, 인접소자로의전기적누설의통로를원천적으로차단하여전기적손실을차단하고고주파영역에서의전기적특성을크게향상시킬수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020150140977A
公开(公告)日：2015-12-17
申请号：KR1020140069285
申请日：2014-06-09
Applicant: 전자부품연구원
CPC classification number: H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81192 , H01L2924/15311 , H01L2924/15313 , H01L2924/19107 , H01L23/34 , H01L23/28 , H01L23/48
Abstract: 본발명은방열특성이향상된반도체패키지장치및 그제조방법에관한것이다. 본발명에방열특성이향상된반도체패키지장치는도전체로채워진관통비아(through via)가형성되어있는기판과, 상기도전체에전기적으로연결된솔더범프에부착되어있는복수개의반도체칩과, 상기솔더범프를감싸도록형성되어상기반도체칩을고정시키는절연체로이루어진언더필링막(under filling layer)과, 상기반도체칩의하면과측면및 상기언더필링막의표면에형성된씨드층(seed layer) 및상기반도체칩을덮도록상기씨드층상에형성되어있으며상기반도체칩의하면과측면을통한방열경로를제공하는방열막을포함하여구성된다. 본발명에따르면, 이종또는동종의복수개의고전력반도체칩의하면뿐만아니라측면을통해서도방열경로를제공함으로써, 방열특성을크게향상시킬수 있는효과가있다.
Abstract translation: 本发明涉及具有改善的散热特性的半导体封装装置及其制造方法。 根据本发明的具有改进的散热特性的半导体封装装置包括：形成有填充有导体的通孔的基板; 多个半导体芯片附接到电连接到导体的焊料凸块; 底部填充层，其形成为包封焊料凸块并由用于固定半导体芯片的绝缘材料构成; 形成在半导体芯片的下表面和侧表面上的种子层和下填充层的表面; 以及形成在种子层顶部以包围半导体芯片并且提供穿过半导体芯片的下表面和侧表面的散热路径的散热层。 根据本发明，可以通过不仅通过不同种类或相同种类的多个大功率半导体芯片的下表面而且通过提供散热路径来提高散热特性。
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公开(公告)号：KR1020150111423A
公开(公告)日：2015-10-06
申请号：KR1020140033489
申请日：2014-03-21
Applicant: 전자부품연구원
IPC: H01L21/31 , H01L21/60 , H01L21/304
CPC classification number: H01L21/76877 , H01L21/76843 , H01L21/7685
Abstract: 본발명은반도체소자및 이를제조하는방법에관한것으로써, 보다구체적으로는라미네이션기술을적용한두꺼운절연층을포함한반도체소자및 이를제조하는방법에관한것이다. 본발명은씨모스전력증폭기(CMOS power amplifier), 저잡음증폭기(LNA, Low Noise Amplifier), 전압조정발진기(VCO, voltage controlled oscillator) 등의회로를위한인덕터혹은전송선로와같은수동소자의성능을향상시키는효과가있다.
Abstract translation: 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法，更具体地，涉及使用层叠技术的具有厚绝缘层的半导体器件及其制造方法。 根据本发明，提供了用于CMOS功率放大器，低噪声放大器（LNA），电压控制器振荡器（VCO）的电路等的无源元件的电感器或传输线的性能的提高的效果。 ，等等。
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公开(公告)号：KR1020140079014A
公开(公告)日：2014-06-26
申请号：KR1020120148457
申请日：2012-12-18
Applicant: 전자부품연구원
CPC classification number: H04B1/50 , H03H7/0115 , H04B1/0057
Abstract: Disclosed are a diplexer for GPS and an ISM band and an RF receiver module. The RF receiver module according to one embodiment of the present invention comprises: a diplexer which separates and outputs GPS signals in a first frequency band and Bluetooth signals or Wi-Fi signals in a second frequency band from radio signals in dual bands, which are received by an antenna; a GPS receiver block which receives the GPS signals in the first frequency band separated by the diplexer; and a Bluetooth-Wi-Fi transceiver block which includes a Bluetooth receiver block receiving the Bluetooth signals in the second frequency block separated by the diplexer, a Wi-Fi receiver block receiving the Wi-Fi signals in the second frequency block, and a Wi-Fi transmitter block transmitting the Wi-Fi signals in the second frequency band to the diplexer.
Abstract translation: 公开了一种用于GPS和ISM频带和RF接收机模块的双工器。 根据本发明的一个实施例的RF接收机模块包括：双工器，其在接收到的双频带中的无线电信号中分离并输出第一频带中的GPS信号和第二频带中的蓝牙信号或Wi-Fi信号 通过天线 GPS接收器块，其接收由所述双工器分离的所述第一频带中的GPS信号; 以及蓝牙Wi-Fi收发器模块，其包括接收由双工器分离的第二频率块中的蓝牙信号的蓝牙接收器模块，接收第二频率块中的Wi-Fi信号的Wi-Fi接收器模块，以及Wi -Fi发射器块将第二频带中的Wi-Fi信号发送到双工器。
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公开(公告)号：KR101364088B1
公开(公告)日：2014-02-20
申请号：KR1020120101034
申请日：2012-09-12
Applicant: 전자부품연구원
CPC classification number: H01L24/82 , H01L2224/12105 , H01L2224/24 , H01L2224/24137 , H01L2224/24147 , H01L2224/32145 , H01L2224/73267 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2924/15153 , H01L2924/15311 , H01L2924/15788 , H01L2224/83 , H01L2224/82 , H01L2924/00 , H01L2924/00012
Abstract: A method for manufacturing an interposer includes a step of forming one or more through-vias on a semiconductor substrate; a step of electrically connecting one or more through-vias to a thin-film circuit formed on one side of the semiconductor substrate; and a step of electrically connecting one or more through-vias to an integrated circuit chip formed on the other side of the semiconductor substrate.
Abstract translation: 一种用于制造插入件的方法包括在半导体衬底上形成一个或多个通孔的步骤; 将一个或多个贯通孔电连接到形成在半导体衬底的一侧上的薄膜电路的步骤; 以及将一个或多个贯通孔电连接到形成在半导体基板的另一侧上的集成电路芯片的步骤。
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公开(公告)号：KR1020130075552A
公开(公告)日：2013-07-05
申请号：KR1020110143951
申请日：2011-12-27
Applicant: 전자부품연구원
CPC classification number: H01L24/73 , H01L2224/24 , H01L2224/24227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/92244 , H01L2225/1023 , H01L2225/1058 , H01L2924/15153 , H01L2924/15311 , H01L2924/15331 , H01L2924/157 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/19107 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: PURPOSE: A semiconductor package and a manufacturing method thereof are provided to implement a thin film type semiconductor package by embedding a thin film passive device in a substrate. CONSTITUTION: At least one first hole is formed on a silicon substrate (110) integrated with a thin film passive device (120). An integrated circuit (130) is inserted into the first hole. A connection member (140) for connecting the integrated circuit to the thin film passive device is formed. An organic insulation layer is made of organic materials by a lamination process. An connection electrode is formed after the connection member is molded. [Reference numerals] (AA,CC) Thin film capacitor; (BB,DD) Spiral inductor
Abstract translation: 目的：提供半导体封装及其制造方法，通过将薄膜无源器件嵌入衬底中来实现薄膜型半导体封装。 构成：在与薄膜无源器件（120）集成的硅衬底（110）上形成至少一个第一孔。 集成电路（130）插入到第一孔中。 形成用于将集成电路连接到薄膜无源器件的连接构件（140）。 有机绝缘层通过层压工艺由有机材料制成。 在连接构件成型后形成连接电极。 （附图标记）（AA，CC）薄膜电容器; （BB，DD）螺旋电感
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