公开(公告)号：WO00077839A1

公开(公告)日：2000-12-21

申请号：PCT/US2000/016260

申请日：2000-06-14

IPC: B81B3/00 ,  B81C1/00 ,  G01L1/18 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  H01L21/285 ,  H01L21/3205 ,  G01P15/00 ,  H01L23/532

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01L1/183 ,  G01P15/0802 ,  G01P15/097 ,  G01P2015/0828 ,  H01L21/28506 ,  H01L21/2855 ,  H01L21/32051

Abstract: A method of forming a thin film metallization layer having a predetermined residual stress and a predetermined sheet resistance and force measuring devices formed using the methods.

Abstract translation: 一种形成具有预定残余应力的薄膜金属化层和预定的薄层电阻的方法以及使用这些方法形成的力测量装置。

公开(公告)号：TWI549899B

公开(公告)日：2016-09-21

申请号：TW100122287

申请日：2011-06-24

Applicant: 萬國商業機器公司 ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： 宕汀 ,  DANG, DINH ,  多安泰 ,  DOAN, THAI ,  鄧巴喬治A 三世 ,  DUNBAR III, GEORGE A. ,  黑榕新 ,  HE, ZHONG-XIANG ,  赫林盧希爾T ,  HERRIN, RUSSELL T. ,  詹斯克里斯多夫V ,  JAHNES, CHRISTOPHER V. ,  梅林傑佛瑞C ,  MALING, JEFFREY C. ,  莫菲威廉J ,  MURPHY, WILLIAM J. ,  史丹普安東尼K ,  STAMPER, ANTHONY K. ,  杜柏立約翰G ,  TWOMBLY, JOHN G. ,  懷艾瑞克J ,  WHITE, ERIC J.

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

公开(公告)号：TW201313601A

公开(公告)日：2013-04-01

申请号：TW101130301

申请日：2012-08-21

Applicant: 高通微機電系統科技公司 ,  QUALCOMM MEMS TECHNOLOGIES, INC.

Inventor： 蒲川 ,  PU, CHUAN ,  陶詣 ,  TAO, YI ,  土普利 強卓S ,  TUPELLY, CHANDRA S. ,  喬德杰夫 柯斯塔丁D ,  DJORDJEV, KOSTADIN D. ,  章凡恩 ,  ZHONG, FAN ,  何日暉 ,  HE, RIHUI ,  張文鉞 ,  ZHANG, WENYUE

IPC: B81B5/00

CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81B2203/019 ,  B81C2201/0167 ,  B81C2201/017

Abstract: 本發明提供用於控制一機械層之系統、方法及設備。在一態樣中，一機電系統裝置包含一基板及定位於該基板上方以界定一間隙之一機械層。可移動層可在一致動位置與一鬆弛位置之間的該間隙中移動，且包含一鏡面層、一罩蓋層及佈置在該鏡面層與該罩蓋層之間之一介電層。該可移動層經組態以在其處於該鬆弛位置中時具有遠離該基板之一方向上之一曲率。在一些實施方案中，該可移動層可經形成以具有經引導朝向該基板之一正應力梯度，該正應力梯度可在移除犧牲層時引導該可移動層之該曲率向上。

Abstract in simplified Chinese: 本发明提供用于控制一机械层之系统、方法及设备。在一态样中，一机电系统设备包含一基板及定位于该基板上方以界定一间隙之一机械层。可移动层可在一致动位置与一松弛位置之间的该间隙中移动，且包含一镜面层、一罩盖层及布置在该镜面层与该罩盖层之间之一介电层。该可移动层经组态以在其处于该松弛位置中时具有远离该基板之一方向上之一曲率。在一些实施方案中，该可移动层可经形成以具有经引导朝向该基板之一正应力梯度，该正应力梯度可在移除牺牲层时引导该可移动层之该曲率向上。

公开(公告)号：US20230422623A1

公开(公告)日：2023-12-28

申请号：US18335277

申请日：2023-06-15

Applicant: QUALCOMM Technologies Inc.

Inventor： Robert John LITTRELL

IPC: H10N30/50 ,  H10N30/05 ,  H10N30/076 ,  H10N30/80 ,  H10N30/30 ,  B81B3/00 ,  B81C1/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/34 ,  C23C14/54 ,  H04R7/06 ,  H04R17/02 ,  H04R31/00

CPC classification number: H10N30/508 ,  H10N30/05 ,  H10N30/50 ,  H10N30/076 ,  H10N30/80 ,  H10N30/306 ,  B81B3/0072 ,  B81C1/00666 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/34 ,  C23C14/542 ,  H04R7/06 ,  H04R17/02 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81C2201/017

Abstract: A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

公开(公告)号：US11716906B2

公开(公告)日：2023-08-01

申请号：US17567719

申请日：2022-01-03

Applicant: Qualcomm Technologies Inc.

Inventor： Robert J. Littrell

IPC: H01L41/083 ,  H10N30/50 ,  H10N30/05 ,  H10N30/076 ,  H10N30/80 ,  H10N30/30 ,  B81B3/00 ,  B81C1/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/34 ,  C23C14/54 ,  H04R7/06 ,  H04R17/02 ,  H04R31/00

CPC classification number: H10N30/508 ,  B81B3/0072 ,  B81C1/00666 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/34 ,  C23C14/542 ,  H04R7/06 ,  H04R17/02 ,  H04R31/003 ,  H10N30/05 ,  H10N30/076 ,  H10N30/306 ,  H10N30/50 ,  H10N30/80 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81C2201/017

Abstract: A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

公开(公告)号：US11708262B2

公开(公告)日：2023-07-25

申请号：US17687230

申请日：2022-03-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Wei-Cheng Shen ,  Wen-Chien Chen

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0013 ,  B81C1/00476 ,  B81C1/00666 ,  B81C1/00968 ,  B81C1/00984 ,  B81B2201/0257 ,  B81B2207/012 ,  B81C2201/0105 ,  B81C2201/017 ,  B81C2201/0109 ,  B81C2201/0128 ,  B81C2201/0147 ,  B81C2201/0163 ,  B81C2201/053 ,  B81C2203/0792 ,  H04R2201/003

Abstract: A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.

公开(公告)号：US10081540B2

公开(公告)日：2018-09-25

申请号：US15807715

申请日：2017-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: H01H1/10 ,  B81C1/00 ,  H01L41/113 ,  H01H59/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00 ,  H01H57/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US10011480B2

公开(公告)日：2018-07-03

申请号：US15403424

申请日：2017-01-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US10005661B2

公开(公告)日：2018-06-26

申请号：US15215182

申请日：2016-07-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: H01H1/10 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US20180159021A1

公开(公告)日：2018-06-07

申请号：US15568553

申请日：2016-04-22

Applicant: Vesper Technologies Inc.

Inventor： Robert Littrell

IPC: H01L41/083 ,  H01L41/113 ,  H01L41/27 ,  H01L41/316 ,  B81B3/00 ,  B81C1/00 ,  C23C14/34 ,  C23C14/06 ,  C23C14/54 ,  C23C14/14 ,  H04R17/02 ,  H04R31/00 ,  H04R7/06

CPC classification number: H01L41/0838 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/017 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/34 ,  C23C14/542 ,  H01L41/04 ,  H01L41/083 ,  H01L41/1136 ,  H01L41/27 ,  H01L41/316 ,  H04R7/06 ,  H04R17/02 ,  H04R31/003

Abstract: A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.