公开(公告)号：DE102008019599B4

公开(公告)日：2011-05-05

申请号：DE102008019599

申请日：2008-04-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUPP ROLAND ,  WOEHLERT STEFAN ,  GUTT THOMAS ,  TREU MICHAEL

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/3213 ,  H01L21/329 ,  H01L21/338 ,  H01L23/58

公开(公告)号：DE102007009227A1

公开(公告)日：2008-08-28

申请号：DE102007009227

申请日：2007-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND ,  RUEB MICHAEL

IPC: H01L29/872

Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.

公开(公告)号：DE10129954B4

公开(公告)日：2007-12-13

申请号：DE10129954

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND

IPC: H01L21/20 ,  H01L21/329 ,  H01L21/60 ,  H01L21/762 ,  H01L29/93

公开(公告)号：DE10129954A1

公开(公告)日：2003-01-09

申请号：DE10129954

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND

IPC: H01L21/762 ,  H01L21/20 ,  H01L21/329 ,  H01L21/60 ,  H01L29/93

Abstract: Production of a semiconductor component comprises preparing a semiconductor wafer (100) having a front side (101) and a rear side (102); applying a first support wafer adhering to the front side on the wafer; removing a layer from the semiconductor wafer; applying a second support wafer adhering to the rear side of the removed layer; and removing the first support wafer. Preferred Features: Contacts are produced after removing the first support wafer. The semiconductor wafer is made from silicon carbide. The front side of the semiconductor wafer is structured before applying the first support wafer to define individual component regions.