公开(公告)号：WO0161735A3

公开(公告)日：2002-07-18

申请号：PCT/DE0100596

申请日：2001-02-15

Applicant: INFINEON TECHNOLOGIES AG ,  LEHMANN VOLKER ,  RUEB MICHAEL ,  TIHANYI JENOE

Inventor： LEHMANN VOLKER ,  RUEB MICHAEL ,  TIHANYI JENOE

IPC: H01L21/266 ,  H01L29/06 ,  H01L23/544

CPC classification number: H01L29/0634 ,  H01L21/266

Abstract: The invention relates to a re-usable implantation mask (5), preferably made of silicon, comprising specially structured trenches and holes(2 or 3), which is provided directly or at a distance from a device wafer (7). The invention also relates to a method for adjusting a further processing plane on an implantation plane in a semiconductor wafer (7) fitted with one such implementation mask.

Abstract translation: 本发明涉及一种可重复使用的注入掩模（5）配有特定图案的沟槽和孔制成优选硅（2或3），其直接或在器件晶片（7），以及用于在注入电平调整一个进一步的处理面的方法的距离设置 一个具有这样的注入掩模的半导体晶片（7）处理。

公开(公告)号：DE102005046427A1

公开(公告)日：2007-04-05

申请号：DE102005046427

申请日：2005-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  SCHMIDT GERHARD

IPC: H01L29/772

Abstract: A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor.

公开(公告)号：DE102005047056B3

公开(公告)日：2007-01-18

申请号：DE102005047056

申请日：2005-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  RUEB MICHAEL

IPC: H01L29/06 ,  H01L21/329 ,  H01L21/336 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor element comprises a semiconductor body (100) with a drift zone (11) and a transition (16) from this to a further component zone (12) that forms a space charge on applying a blocking voltage. There is a field electrode structure (40) comprising at least two adjacent first field electrodes (41) in a second direction isolated and separated from the drift zone and from one another by a dielectric (33,61) and at least one second field electrode (42) in a second direction neighboring and overlapping the first and isolated from it. Independent claims are also included for the following: (A) Production processes for a field electrode structure;and (B) A production process for a structured layer.

公开(公告)号：DE10143515B4

公开(公告)日：2006-09-07

申请号：DE10143515

申请日：2001-09-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  UMBACH FRANK ,  WERNER WOLFGANG

IPC: G03F1/20 ,  H01L21/266 ,  H01L29/06

公开(公告)号：DE10051909A1

公开(公告)日：2002-05-16

申请号：DE10051909

申请日：2000-10-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHLERS DIRK ,  DETZEL THOMAS ,  FRIZA WOLFGANG ,  RUEB MICHAEL

IPC: H01L29/06 ,  H01L29/40

Abstract: Edge border comprises: a semiconductor body (1) of one conducting type with semiconducting regions (2,3) on an edge surface region bordering a first main surface; and a field plate (4) arranged on the edge surface region and the first main surface. The site of the bend and sealing of equipotential lines (9) is applied using a voltage in an insulating region (6). An Independent claim is also included for a process for the production of an insulating region in a semiconductor body. Preferred Features: The insulating region is an insulating region extending vertically from the first main surface into the semiconductor body.

公开(公告)号：DE102005046427B4

公开(公告)日：2010-09-23

申请号：DE102005046427

申请日：2005-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  SCHMIDT GERHARD

IPC: H01L29/775

公开(公告)号：DE10260286B4

公开(公告)日：2006-07-06

申请号：DE10260286

申请日：2002-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF

IPC: H01L21/322 ,  H01L21/263 ,  H01L21/265 ,  H01L21/324 ,  H01L29/06

公开(公告)号：DE10239580B4

公开(公告)日：2006-01-26

申请号：DE10239580

申请日：2002-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL

IPC: H01L21/328 ,  H01L21/329 ,  H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

公开(公告)号：DE10239580A1

公开(公告)日：2004-03-18

申请号：DE10239580

申请日：2002-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL

IPC: H01L21/329 ,  H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L21/334 ,  H01L21/328

Abstract: Production of a compensation region comprises forming primary doping material depots (31, 32, 33) of first p-conductivity in a first region (21) or second n-conductivity in a semiconductor material region (20) in a laterally displaced manner, and diffusing out the primary doping material depots in the first region forming a compensation region as a superposition made from secondary doping material depots (31', 32', 33') produced from the primary doping material depots. Independent claims are also included for the following: (1) Compensation semiconductor component; and (2) Process for the production of the compensation semiconductor component.

公开(公告)号：DE19843959B4

公开(公告)日：2004-02-12

申请号：DE19843959

申请日：1998-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  HAEBERLEN OLIVER ,  STRACK HELMUT ,  RUEB MICHAEL ,  FRIZA WOLFGANG

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/334 ,  H01L21/328

Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.