公开(公告)号：US06838297B2

公开(公告)日：2005-01-04

申请号：US09867611

申请日：2001-05-31

Applicant: Tatsuya Iwasaki ,  Tohru Den

Inventor： Tatsuya Iwasaki ,  Tohru Den

IPC: H01J1/304 ,  B81C1/00 ,  B82B3/00 ,  G01N27/403 ,  G01N27/414 ,  G11B5/73 ,  G11B5/855 ,  H01F1/00 ,  H01J9/02 ,  H01L21/3063 ,  H01L21/00 ,  H01J9/04 ,  H01J9/12 ,  H01J9/14

CPC classification number: H01F1/009 ,  B81C1/00087 ,  B81C2201/0114 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/7325 ,  G11B5/743 ,  G11B5/855 ,  G11C2213/81 ,  H01F1/0081 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/939

Abstract: The invention provides a nanostructure including an anodized film including nanoholes. The anodized film is formed on a substrate having a surface including at least one material selected from the group consisting of semiconductors, noble metals, Mn, Fe, Co, Ni, Cu and carbon. The nanoholes are cut completely through the anodized film from the surface of the anodized film to the surface of the substrate. The nanoholes have a first diameter at the surface of the anodized film and a second diameter at the surface of the substrate. The nanoholes are characterized in that either a constriction exists at a location between the surface of the anodized film and the surface of the substrate, or the second diameter is greater than the first diameter.

Abstract translation: 本发明提供纳米结构，其包括包括纳孔的阳极氧化膜。 阳极氧化膜形成在具有包括选自半导体，贵金属，Mn，Fe，Co，Ni，Cu和碳中的至少一种材料的表面的基板上。 通过阳极氧化膜将阳极氧化膜的表面完全切割成纳米孔至基底表面。 纳米孔在阳极氧化膜的表面具有第一直径，在基底表面具有第二直径。 纳米孔的特征在于，在阳极氧化膜的表面和基底的表面之间的位置处存在收缩，或者第二直径大于第一直径。

公开(公告)号：US06737668B2

公开(公告)日：2004-05-18

申请号：US09895464

申请日：2001-07-02

Applicant: Tohru Den ,  Tatsuya Iwasaki

Inventor： Tohru Den ,  Tatsuya Iwasaki

IPC: H01L2906

CPC classification number: B01D71/025 ,  B01D67/0065 ,  B81B2203/0315 ,  B81C1/00031 ,  B81C2201/0114 ,  C04B38/0025 ,  C04B2111/00612 ,  C25D11/045 ,  H01L49/00 ,  C04B35/10 ,  C04B38/0003 ,  C04B41/4564

Abstract: A method of manufacturing a structure with pores which are formed by anodic oxidation and whose layout, pitch, position, direction, shape and the like can be controlled. The method includes the steps of: disposing a lamination film on a substrate, the lamination film being made of insulating layers and a layer to be anodically oxidized and containing aluminum as a main composition; and performing anodic oxidation starting from an end surface of the lamination film to form a plurality of pores having an axis substantially parallel to a surface of the substrate, wherein the layer to be anodically oxidized is sandwiched between the insulating layers, and a projected pattern substantially parallel to the axis of the pore is formed on at least one of the insulating layers at positions between the pores.

Abstract translation: 可以控制通过阳极氧化形成具有孔的结构的方法，其结构，间距，位置，方向，形状等可以被控制。 该方法包括以下步骤：在基板上设置层压膜，层叠膜由绝缘层和要被阳极氧化并含有铝作为主要组成的层制成; 以及从所述层压膜的端面开始进行阳极氧化，以形成具有基本上平行于所述基板的表面的轴的多个孔，其中所述被阳极氧化的层被夹在所述绝缘层之间，并且基本上 在孔之间的位置处，在至少一个绝缘层上形成平行于孔的轴线。

公开(公告)号：US20030116813A1

公开(公告)日：2003-06-26

申请号：US10169464

申请日：2002-10-28

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L021/00 ,  H01L027/14 ,  H01L029/84

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: A micromechanical component having a substrate (10) made from a substrate material having a first doping type (p), a micromechanical functional structure provided in the substrate (10) and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material having a second doping type (n), the zones being at least partially surrounded by a cavity (50; 50e-f), and the cover layer has a porous layer (30) made from the substrate material.

Abstract translation: 一种具有由具有第一掺杂型（p）的衬底材料制成的衬底（10）的微机械部件，以及设置在衬底（10）中的微机械功能结构和覆盖层，以至少部分地覆盖微机械功能结构。 所述微机械功能结构具有由具有第二掺杂型（n）的所述衬底材料制成的区域（15; 15a; 15b; 15c; 730; 740; 830），所述区域至少部分地被空腔（50; 50e- f），并且覆盖层具有由基板材料制成的多孔层（30）。

公开(公告)号：US20020079490A1

公开(公告)日：2002-06-27

申请号：US09969792

申请日：2001-10-04

Applicant: Mitsubishi Denki Kabushiki Kaisha

Inventor： Shinichi Izuo ,  Hiroshi Ohji ,  Kazuhiko Tsutsumi

IPC: H01L023/58

CPC classification number: B81C1/00111 ,  B81B2201/0214 ,  B81C2201/0114 ,  B81C2201/0178 ,  G01N27/44791

Abstract: Providing a columnar structure having a uniform shape and excellent heat resistance and mechanical strength that is formed on a substrate of silicon, a method of preparing the structure, and a DNA separation device prepared by the method. A structure has, on a substrate made of silicon, columns of which main surface is covered with a thermally oxidized film. The columns are made of the thermally oxidized film only or of the thermally oxidized film and silicon. The thermally oxidized film formed on the columns is connected to those formed on the surface or inside of the substrate.

Abstract translation: 提供具有均匀形状的柱状结构，并且在硅衬底上形成的优异的耐热性和机械强度，制备该结构的方法以及通过该方法制备的DNA分离装置。 在由硅制成的基板上，在主表面被热氧化膜覆盖的列中， 柱仅由热氧化膜或热氧化膜和硅制成。 形成在列上的热氧化膜与在基板的表面或内部形成的热氧化膜连接。

公开(公告)号：US06278231B1

公开(公告)日：2001-08-21

申请号：US09276667

申请日：1999-03-26

Applicant: Tatsuya Iwasaki ,  Tohru Den

Inventor： Tatsuya Iwasaki ,  Tohru Den

IPC: H01J102

CPC classification number: H01F1/009 ,  B81C1/00087 ,  B81C2201/0114 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/7325 ,  G11B5/743 ,  G11B5/855 ,  G11C2213/81 ,  H01F1/0081 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/939

Abstract: The invention provides a nanostructure including an anodized film including nanoholes. The anodized film is formed on a substrate having a surface including at least one material selected from the group consisting of semiconductors, noble metals, Mn, Fe, Co, Ni, Cu and carbon. The nanoholes are cut completely through the anodized film from the surface of the anodized film to the surface of the substrate. The nanoholes have a first diameter at the surface of the anodized film and a second diameter at the surface of the substrate. The nanoholes are characterized in that either a constriction exists at a location between the surface of the anodized film and the surface of the substrate, or the second diameter is greater than the first diameter.

Abstract translation: 本发明提供纳米结构，其包括包括纳孔的阳极氧化膜。 阳极氧化膜形成在具有包括选自半导体，贵金属，Mn，Fe，Co，Ni，Cu和碳中的至少一种材料的表面的基板上。 通过阳极氧化膜将阳极氧化膜的表面完全切割成纳米孔至基底表面。 纳米孔在阳极氧化膜的表面具有第一直径，在基底表面具有第二直径。 纳米孔的特征在于，在阳极氧化膜的表面和基底的表面之间的位置处存在收缩，或者第二直径大于第一直径。

公开(公告)号：US5629244A

公开(公告)日：1997-05-13

申请号：US428483

申请日：1995-04-27

Applicant: Tadahiro Matsuzaki

Inventor： Tadahiro Matsuzaki

IPC: B81B3/00 ,  G01P15/08 ,  C23F1/00 ,  C03C15/00 ,  C03C25/06 ,  H01L21/306

CPC classification number: B81C1/00142 ,  G01P15/0802 ,  B81B2201/0235 ,  B81C2201/0114 ,  G01P2015/0828

Abstract: Using a p-type silicon substrate 1 having on its front surface an n-type silicon layer 2 with a thickness of twice or more of the desired thickness for the beam, an electrochemical etching is performed from the rear surface and the etching is stopped at the beam thickness which is twice or more of the desired thickness. Etching for the beam part 8 from the rear surface proceeds along with the etching for the gap part 9 from the front surface, and a desired thickness for the beam can be formed by completing the etching at the timing when the gap part is opened through.

Abstract translation: 使用在其前表面上具有厚度为所需厚度的两倍或更多的n型硅层2的p型硅衬底1，从后表面进行电化学蚀刻，并且蚀刻停止在 光束厚度是所需厚度的两倍或更多。 来自后表面的光束部分8的蚀刻与前表面的间隙部分9的蚀刻一起进行，并且可以通过在间隙部分打开的时刻完成蚀刻来形成所需光束的所需厚度。

公开(公告)号：US5565084A

公开(公告)日：1996-10-15

申请号：US478732

申请日：1995-06-07

Applicant: Ho J. Lee ,  Hi D. Lee ,  Jae D. Lee ,  Jun B. Yoon ,  Chul H. Han ,  Choong K. Kim ,  Doo W. Seo

Inventor： Ho J. Lee ,  Hi D. Lee ,  Jae D. Lee ,  Jun B. Yoon ,  Chul H. Han ,  Choong K. Kim ,  Doo W. Seo

IPC: B23H3/00 ,  B41J2/16 ,  B81B3/00 ,  B81C99/00 ,  C25F3/12 ,  C25F3/30

CPC classification number: B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1643 ,  B81C1/00158 ,  C25F3/12 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81C2201/0114 ,  B81C2201/0115

Abstract: Disclosed are electropolishing methods for etching a substrate in self alignment. A hole is formed in a substrate in self alignment by using an electropolishing system, wherein a reaction tube, an etchant solution, an electrode, a constant current source and the silicon substrate, said etchant solution being contained in a space confined by the reaction tube and the substrate, which is attached to one end of the reaction tube in such a way that the bottom of the substrate may be toward the interior of the space, said constant current source being connected with a metal layer formed on the substrate and the electrode. The substrate is made to be porous by flowing a constant current and etched by the action of the etchant solution while breaking the current. In addition to being economical, the methods can determine the position and size of the hole accurately and precisely. Further, neither chemical damage nor mechanical impact is generated on the substrate.

Abstract translation: 公开了用于自对准蚀刻衬底的电抛光方法。 通过使用电抛光系统在基板中形成孔，其中反应管，蚀刻剂溶液，电极，恒流源和硅衬底，所述蚀刻剂溶液包含在由反应管限制的空间中 以及基板，其以使得基板的底部朝向空间的内部的方式附接到反应管的一端，所述恒定电流源与形成在基板上的金属层和电极 。 通过流动恒定电流使衬底多孔，并通过蚀刻溶液的作用在破坏电流的同时进行蚀刻。 除了经济以外，这些方法可以精确准确地确定孔的位置和尺寸。 此外，在基板上既不会产生化学损伤也不产生机械冲击。

公开(公告)号：EP1383707B1

公开(公告)日：2011-04-13

申请号：EP02715619.9

申请日：2002-01-11

Applicant: International Business Machines Corporation

Inventor： DESPONT, Michel ,  DRECHSLER, Ute ,  MAGNUSON, Roy, H.

IPC: B81C1/00

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising said material and a noble metal layer (8) against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer (12) having a lower redox potential than said material, the sacrificial metal layer (12) being electrically connected to said noble metal layer (8).

公开(公告)号：EP1999302B1

公开(公告)日：2009-08-19

申请号：EP07730927.6

申请日：2007-02-06

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： BUTTARD, Denis

IPC: C25D5/02 ,  C25D17/10 ,  C25F3/14 ,  C25D7/12 ,  B81C1/00

CPC classification number: B81C1/00126 ,  B81C2201/0114 ,  C25D1/00 ,  C25D1/006 ,  C25D5/02 ,  C25D5/16 ,  C25D7/12 ,  C25D17/005 ,  C25F3/14 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675

Abstract: The invention provides a method and a device for reliable, rapid, simple, easily implementable and reproducible electrochemical microstructuring and/or nanostructuring. For this purpose, the subject of the invention is a method for electrochemically structuring a specimen (12) made of a conductive or semiconductor material and comprising two opposed faces, a front face (11) and a rear face (13). The method comprises the steps consisting: in bringing at least the front face (11) of the specimen (12) into contact with at least one electrolytic solution (4) stored in at least one reservoir (3); in placing at least one counterelectrode (6) in the electrolyte (4) opposite the front face (11) of the specimen (12) that has to be structured; in placing at least one working electrode (7) in dry ohmic contact with the rear face (13) of the specimen (12), said working electrode having structuring features (14); and in applying an electric current between the two electrodes in order to obtain an electrochemical reaction at the interface between the front face (11) of the specimen (12) and the electrolyte (4), with a current density that is modulated by the structuring features (14) of the working electrode (7) in order to etch material from or deposit material on the front face (11) of the specimen (12).

公开(公告)号：EP1119032B8

公开(公告)日：2008-03-19

申请号：EP01107622.1

申请日：1993-04-20

Applicant: Denso Corporation

Inventor： Fukada, Tsuyoshi ,  Yoshino, Yoshimi, c/o Intellectual Prop. Dept. ,  Tanizawa, Yukihiko, c/oIntellectual Prop. Dept.

IPC: H01L21/3063 ,  H01L21/78 ,  G01P15/12 ,  G01P15/08 ,  G01L9/00

CPC classification number: B81C1/00888 ,  B81B2201/0235 ,  B81C1/00158 ,  B81C2201/0114 ,  B81C2201/053 ,  G01L9/0055 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/3063 ,  H01L21/78 ,  Y10S148/028 ,  Y10S148/159 ,  Y10S438/977