Abstract:
Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electromechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.
Abstract:
A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises - after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), - etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), - depositing a second layer of material (240) on the base material in the cavity (280), and - subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.
Abstract:
Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.
Abstract:
A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.
Abstract:
L'invention se rapporte à une pièce de micromécanique composite (41, 41') comportant une partie horizontale (21) en silicium qui comprend un ajourage (25) recevant une partie métallique (43, 43') caractérisée en ce que la partie (21) en silicium est formée par du silicium dopé et comporte au moins une partie verticale destinée à transmettre une force mécanique à un élément n'appartenant pas à ladite pièce, ladite partie verticale est revêtue (51, 52) par du dioxyde de silicium selon une épaisseur supérieure à un oxyde natif afin d'améliorer les qualités tribologiques dudit silicium. L'invention concerne le domaine des pièces de micromécanique notamment pour des mouvements horlogers.
Abstract:
L'invention se rapporte à un procédé de fabrication (1) d'une pièce de micromécanique composite (41, 41') comportant les étapes suivantes : a) se munir (10) d'un substrat (9, 9') comportant une couche supérieure (21) et une couche inférieure (23) en matériau micro-usinable électriquement conductrices et solidarisées entre elles par une couche intermédiaire (22) électriquement isolante ; b) graver selon au moins un motif (26) dans la couche supérieure (21) jusqu'à la couche intermédiaire (22) afin de former au moins une cavité (25) dans le substrat (9, 9') ; c) recouvrir (16) la partie supérieure dudit substrat d'un revêtement (30) électriquement isolant ; d) graver (18) de manière directionnelle ledit revêtement et ladite couche intermédiaire afin de limiter leur présence uniquement au niveau de chaque paroi verticale (51, 52) formée dans ladite couche supérieure ; e) réaliser (5) une électrodéposition en connectant l'électrode à la couche conductrice inférieure (23) du substrat (9, 9') afin de former au moins une partie métallique (33, 43, 43') de ladite pièce ; f) libérer la pièce composite (41, 41') du substrat (9, 9'). L'invention concerne le domaine des pièces de micromécanique notamment pour des mouvements horlogers.