公开(公告)号：EP1108203A2

公开(公告)日：2001-06-20

申请号：EP99953629.5

申请日：1999-08-27

Applicant: Infineon Technologies AG

Inventor： AIGNER, Robert ,  HIEROLD, Christofer ,  KAPELS, Hergen ,  KOLB, Stefan ,  MAIER-SCHNEIDER, Dieter ,  OPPERMANN, Klaus-Günter ,  TIMME, Hans-Jörg ,  SCHEITER, Thomas ,  WERNER, Wolfgang

IPC: G01L9/00 ,  G01L9/12 ,  G01P15/08 ,  H04R7/10

CPC classification number: G01L9/0042 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a method for the production of a micromechanical component, comprising the production of a micromechanical component with sensor holes, wherein at least one component protective layer and/or spacer coating is applied on the component before separating the wafer into chips, wherein the component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer. The invention also relates to a micromechanical component produced according to the method disclosed in the invention and to the use of said components in microphones, pressure sensors or acceleration sensors.

公开(公告)号：EP0684462A3

公开(公告)日：1997-05-07

申请号：EP95106968.1

申请日：1995-05-08

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Hierold, Christofer, Dr.

IPC: G01K7/02 ,  H01L49/00 ,  H01L27/16

CPC classification number: H01L27/16 ,  B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81C1/00246 ,  B81C1/0069 ,  B81C2201/053 ,  B81C2203/0136 ,  B81C2203/0735 ,  G01F1/6845 ,  G01F1/6888 ,  G01K7/015 ,  G01P15/0802

Abstract: Halbleiterbauelement mit monolithisch integrierten elektronischen Schaltungen und monolithisch integriertem Sensor/Aktuator, bei dem der Sensor/Aktuator mit Methoden des Surface-Micromachining hergestellt ist in einer z. B. mit Sensorstegen (6) strukturierten Sensorschicht (3) aus Polysilizium und diese Sensorstege (6) von einem Siliziumsubstrat (1) durch einen in einer Opferschicht (2) hergestellten und mit einer Verschlußschicht (5) nach außen gasdicht verschlossenen Hohlraum (4) thermisch isoliert sind.

Abstract translation: 具有单片集成电子电路和单片集成传感器/辅助器的半导体部件，由此传感器/致动器由例如由传感器网（6）构成的多晶硅传感器层（3）中的表面微加工的方法制造，以及 这些传感器网（6）通过在牺牲层（2）中产生的空腔（4）与硅衬底（1）热绝缘，并且通过封闭层（5）朝向外部气密地封闭。

公开(公告)号：EP0646246A1

公开(公告)日：1995-04-05

申请号：EP93911119.0

申请日：1993-05-06

Applicant: ANALOG DEVICES, INCORPORATED

Inventor： TSANG, Robert, W., K. ,  CORE, Theresa, A. ,  SHERMAN, Steven, J. ,  BROKAW, A., Paul

IPC: G01P15 ,  B81B3 ,  H01L29

CPC classification number: B81B3/001 ,  B81C1/00246 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2201/112 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/0814

Abstract: The invention comprises a method for fabricating a monolithic chip containing integrated circuitry as well as a suspended polysilicon microstructure. The inventive method comprises 67 processes which are further broken down into approximately 330 steps. The processes and their arrangement allow for compatible fabrication of transistor circuitry and the suspended polysilicon microstructure on the same chip.

公开(公告)号：EP0427930A3

公开(公告)日：1992-05-13

申请号：EP90116543.1

申请日：1990-08-29

Applicant: International Business Machines Corporation

Inventor： Bassous, Ernest ,  Blum, Joseph M. ,  Chan, Kevin K. ,  Lamberti, Angela C.

IPC: G03F1/14

CPC classification number: B81C1/00158 ,  B81C2201/0104 ,  B81C2201/0136 ,  B81C2201/053 ,  B81C2203/019 ,  G01L9/0042 ,  G03F1/22 ,  Y10S438/977

Abstract: The method of fabrication of a monolithic silicon membrane structure in which the membrane and its supporting framework are constructed from a single ultra thick body of silicon. The fabrication sequence includes the steps of providing a doped membrane layer on the silicon body, forming an apertured mask on the silicon body, and removal of an unwanted silicon region by mechanical grinding and chemical etching to provide a well opening in the silicon body terminating in the doped membrane.

公开(公告)号：JP2016523725A

公开(公告)日：2016-08-12

申请号：JP2016520322

申请日：2014-05-12

Applicant: エプコス アクチエンゲゼルシャフトEpcos Ag ,  エプコス アクチエンゲゼルシャフトEpcos Ag

Inventor： パール、ウォルフガング

IPC: B81C1/00 ,  B81C3/00 ,  H01L23/02 ,  H04R19/04 ,  H04R31/00

CPC classification number: B81C1/00825 ,  B81B7/0058 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/115 ,  B81C2201/053 ,  B81C2203/0785 ,  H01L2224/16225 ,  H01L2224/48137 ,  H01L2224/73257 ,  H01L2924/16151 ,  H01L2924/16152

Abstract: パターン状の構造を有するコーティングの製造、又は繊細な領域から温和な条件でのコーティングの除去のための方法であって、リリースフィルムが、非コーティング領域内のコーティングの下に形成され、パターン化される。剥離工程において、リリースフィルムに作用している接着力が低減され、リリースフィルムが、この上に設けられたコーティングと共に剥離される。【選択図】図9K

Abstract translation: 具有图案化结构，或用于去除从敏感部位在温和条件下的涂层的方法涂料的生产，离型膜的未涂覆区域的涂层下形成被图案化 这一点。 在反萃取步骤中，减小作用于剥离膜的粘接力，剥离膜与设置在其上的涂层一起剥离。 点域9K

公开(公告)号：JP2013526083A

公开(公告)日：2013-06-20

申请号：JP2013509193

申请日：2011-05-03

Applicant: エス3シー インコーポレイテッドS3C Inc.

Inventor： ホートン，ロジャー ,  フセイン，ジェイヴド

IPC: H01L21/301 ,  B24B27/06 ,  B81C99/00

CPC classification number: B81B7/0058 ,  B81C1/00888 ,  B81C2201/053 ,  G01L9/0055 ,  H01L21/78

Abstract: A method for separating a plurality of dies on a Micro-Electro-Mechanical System (MEMS) wafer comprising scribing a notch on a first side of the wafer between at least two of the plurality of dies on a first surface and depositing a metal on the first surface of the plurality of dies. The method further comprises scribing a second side of the wafer between at least two of the plurality of dies from a second surface thereof through the notch. The first side and second side are substantially parallel and opposite each other and the first surface and the second surface are substantially parallel and opposite each other. In a process in accordance with the present invention, a method to minimize chipping of the bonding portion of a MEMs device during sawing of the wafer is provided, which minimally affects the process steps associated with separating the die on a wafer.

公开(公告)号：JP2012119820A

公开(公告)日：2012-06-21

申请号：JP2010266215

申请日：2010-11-30

Applicant: Seiko Epson Corp ,  セイコーエプソン株式会社

Inventor： KANEMOTO YOKO ,  KIHARA TATSUJI

IPC: H03H3/007 ,  B81B3/00 ,  B81C1/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81C1/00801 ,  B81B2201/0271 ,  B81B2207/07 ,  B81C2201/053 ,  Y10T29/49165

Abstract: PROBLEM TO BE SOLVED: To provide an electronic device which has a structure preventing an etchant from easily flowing to the exterior of a cover part covering a cavity part in which an MEMS structure is located.SOLUTION: An electronic device has: a vibration element 5 positioned in a cavity part 33 on a substrate 2 and electrically driven; an electric conductive enclosing wall 25 defining an insulation layer 29 enclosing the cavity part 33 and the cavity part 33; a first wiring 8 and a second wiring 9 which connect with the vibration element 5 and penetrate through the enclosing wall 25; and a first anti-corrosion insulation film 19 and a second anti-corrosion insulation film 20, which prevent an etchant that melts the insulation layer 29 from flowing from the cavity part 33 to the insulation layer 29 and insulate the enclosing wall 25 from the first wiring 8 and the second wiring 9, are provided at positions where the first wiring 8 and the second wiring 9 penetrate through the enclosing wall 25.

Abstract translation: 解决的问题：提供一种电子装置，其具有防止蚀刻剂容易地流到覆盖MEMS结构所在的空腔部分的盖部的外部的结构。 解决方案：电子设备具有：位于基板2上的空腔部分33中并被电驱动的振动元件5; 导电封闭壁25限定包围空腔部分33和空腔部分33的绝缘层29; 与振动元件5连接并穿过封闭壁25的第一布线8和第二布线9; 以及第一防腐蚀绝缘膜19和第二防腐蚀绝缘膜20，其防止熔化绝缘层29的蚀刻剂从空腔部分33流到绝缘层29并使封闭壁25与第一防腐绝缘膜20隔离。 布线8和第二布线9设置在第一布线8和第二布线9穿过封闭壁25的位置。版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010045334A

公开(公告)日：2010-02-25

申请号：JP2009148880

申请日：2009-06-23

Applicant: Commissariat A L'energie Atomique Cea ,  コミサリア、ア、レネルジ、アトミク−セーエーアーCommissariat A L’Energie Atomique

Inventor： CHARVET PIERRE-LOUIS

IPC: H01L29/84 ,  B81C1/00

CPC classification number: B81C1/00801 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/053

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a movable structure capable of easing various restrictions in the structure manufacturing process using a sacrificial material.
SOLUTION: A first sacrificial material and a second sacrificial material are made to accumulate on substrate 1. A first pattern 2a and a second pattern 6a are formed with the first sacrificial material and the second sacrificial material, respectively. The first pattern created from the first sacrificial material is arranged on the second pattern created from the second sacrificial material. The first pattern is formed in the state where the surrounding portion of the second pattern is not covered. An active layer 3 covers at least whole sidewalls of the first pattern and the second pattern, and a predetermined area of the second pattern. The active layer is patterned so as to make it possible to access the first sacrificial material. The first sacrificial material and the second sacrificial material are removed selectively, and form the movable structure provided with the free area fixed to a substrate 1 by the fixed area.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造可消除使用牺牲材料的结构制造过程中的各种限制的可移动结构的方法。 解决方案：第一牺牲材料和第二牺牲材料被制成积累在衬底1上。第一图案2a和第二图案6a分别由第一牺牲材料和第二牺牲材料形成。 由第一牺牲材料制成的第一图案被布置在由第二牺牲材料制成的第二图案上。 在第二图案的周围部分未被覆盖的状态下形成第一图案。 有源层3覆盖第一图案和第二图案的至少整个侧壁以及第二图案的预定区域。 有源层被图案化以使得可以访问第一牺牲材料。 选择性地去除第一牺牲材料和第二牺牲材料，并且形成设置有通过固定区域固定到基板1的自由区域的可移动结构。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008140818A

公开(公告)日：2008-06-19

申请号：JP2006323006

申请日：2006-11-30

Applicant: Fujitsu Ltd ,  富士通株式会社

Inventor： FURUI JUICHI

IPC: H01L21/301 ,  B28D5/02

CPC classification number: B81C1/00888 ,  B81C2201/053 ,  H01L21/78

Abstract: PROBLEM TO BE SOLVED: To surely remove cutting powder generated in the dicing process by not allowing residues of protection agent for protecting substrate surface during the dicing process to be left even after removal of the protection agent. SOLUTION: In the case of manufacturing a device element, a plurality of device elements are formed first on the substrate (S1). Next, before the dicing process, a volatile protection agent is coated to at least front surface of the substrate on which a device element is formed (S2). Thereafter, each device element is isolated by the dicing process (S3). After the dicing process, the front surface of the volatile protection agent is washed (S4). After this washing process, the volatile protection agent is vaporized (S5). COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：即使在除去保护剂之后，也不会在切割过程中不允许保留基板表面的保护剂残留物，从而确保去除切割工艺中产生的切割粉末。 解决方案：在制造器件元件的情况下，首先在衬底上形成多个器件元件（S1）。 接下来，在切割过程之前，将挥发性保护剂涂覆到其上形成器件元件的基板的至少前表面（S2）。 此后，通过切割处理隔离每个器件元件（S3）。 在切割过程之后，洗涤挥发性保护剂的前表面（S4）。 在该洗涤过程之后，挥发性保护剂蒸发（S5）。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006140341A

公开(公告)日：2006-06-01

申请号：JP2004329227

申请日：2004-11-12

Applicant: Disco Abrasive Syst Ltd ,  株式会社ディスコ

Inventor： GENDA SATOSHI ,  NAKAMURA HIROSHI

IPC: H01L21/301

CPC classification number: B81C1/00888 ,  B81C2201/053 ,  H01L21/67132

Abstract: PROBLEM TO BE SOLVED: To provide a dividing method of a wafer capable of dividing the wafer along predetermined streets without deteriorating the quality of a micromachine. SOLUTION: The dividing method of a wafer, wherein there are formed on the surface of a wafer substrate 21 a plurality of micromachines and a plurality of streets 211 for comparting each micromachine, comprises a protective tape sticking process of sticking a protective tape 4 on the surface of the wafer 2; a cut groove forming process of cutting the wafer 2 on which the protective tape 4 is stuck along the streets from the back surface of the wafer substrate 21 of the wafer and hereby forming cut grooves 23, while leaving a stock removal of a predetermined thickness on the surface side of the wafer substrate 21; and a cutting process of cutting the stock removal by irradiating the cut margin of the cut grooves 23 formed along the streets 211 with laser light. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够沿着预定街道划分晶片的晶片的分割方法，而不会降低微机械的质量。 解决方案：晶片的分割方法，其中在晶片基板21的表面上形成有多个微型机器，以及用于分隔每个微机械机构的多个街道211，包括粘贴保护带的保护带粘附过程 4在晶片2的表面上; 切割槽形成工序，从晶片的晶片基板21的背面沿街道切割保护带4，从而形成切割槽23，同时将预定厚度的原料去除 晶片基板21的表面侧; 以及通过用激光照射沿着街道211形成的切割槽23的切割边缘来切割库存去除的切割处理。 版权所有（C）2006，JPO＆NCIPI