Flat panel display with magnetic field emitter
    121.
    发明授权
    Flat panel display with magnetic field emitter 失效
    带磁场发射器的平板显示器

    公开(公告)号:US5708327A

    公开(公告)日:1998-01-13

    申请号:US665566

    申请日:1996-06-18

    Inventor: John O. O'Boyle

    CPC classification number: H01J1/3042 H01J2201/30446

    Abstract: A flat panel display device (50) includes magnetic field emitter elements (52). The emitter elements (52) include a dopant ferromagnetic material (56) used to produce a permanent magnet in the emitter elements (52). The permanent magnet in the emitter elements (52) generates a magnetic field (B) used to focus the electrons emitted from the tips of the emitter elements (52). The flat panel display device (50) further includes a voltage source (70) for producing an electric field (E) between a cathode electrode (54) having a gate electrode (58), and an anode electrode (60) having phosphor regions (62) disposed between black matrix regions (61). The magnetic field (B) provides a restoring magnetic force to collimate the electrons toward the phosphor regions (62) to produce a high brightness display.

    Abstract translation: 平板显示装置(50)包括磁场发射体元件(52)。 发射极元件(52)包括用于在发射极元件(52)中产生永磁体的掺杂剂铁磁材料(56)。 发射体元件(52)中的永磁体产生用于聚焦从发射体元件(52)的尖端发射的电子的磁场(B)。 平板显示装置(50)还包括用于在具有栅电极(58)的阴极(54)和具有荧光体区域(58)的阳极电极(60)之间产生电场(E)的电压源 62)设置在黑矩阵区域(61)之间。 磁场(B)提供恢复磁力以将电子准直到荧光体区域(62)以产生高亮度显示。

    Lateral field emission device
    123.
    发明授权
    Lateral field emission device 有权
    侧面场发射装置

    公开(公告)号:US09099274B2

    公开(公告)日:2015-08-04

    申请号:US13978797

    申请日:2012-01-10

    CPC classification number: H01J1/316 B82Y20/00 H01J2201/30446 H01J2201/30469

    Abstract: Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.

    Abstract translation: 描述了相对于衬底平行地发射电子的横向场发射器件。 具有预定厚度的电子发射材料在支撑部分上相对于衬底的方向布置。 阳极设置在基板的侧部,阳极对应于电子发射材料。

    Electrode material with low work function and high chemical stability
    124.
    发明申请
    Electrode material with low work function and high chemical stability 有权
    电极材料功能低,化学稳定性高

    公开(公告)号:US20150054398A1

    公开(公告)日:2015-02-26

    申请号:US14386884

    申请日:2012-12-31

    Inventor: Jian Xin Yan

    Abstract: The present invention discloses an electrode material that eases electron injection and does not react with contact substances. The structure of the material includes a conductive substrate plane on the top of which an emissive material is coated. The emissive coating bonds strongly with the substrate plane. The emissive material is of low work function and high chemical stability.

    Abstract translation: 本发明公开了一种使电子注入并且不与接触物质发生反应的电极材料。 该材料的结构包括在其顶部涂覆有发光材料的导电基底平面。 发射涂层与衬底平面牢固地结合。 发光材料功能低,化学稳定性高。

    Electron emission source, composition for forming electron emission source, method of forming the electron emission source and electron emission device including the electron emission source
    126.
    发明授权
    Electron emission source, composition for forming electron emission source, method of forming the electron emission source and electron emission device including the electron emission source 失效
    电子发射源,用于形成电子发射源的组合物,形成电子发射源的方法和包括电子发射源的电子发射装置

    公开(公告)号:US07919912B2

    公开(公告)日:2011-04-05

    申请号:US11734393

    申请日:2007-04-12

    Applicant: Joo-Young Kim

    Inventor: Joo-Young Kim

    Abstract: An electron emission source includes a carbon-based material and resultant material formed by curing and heat treating at least one silicon-based material represented by formula (1), (2), and/or (3) below: where R1 through R22 are each independently a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C1-C20 alkenyl group, a halogen atom, a hydroxyl group or a mercapto group, and m and n are each integers from 0 to 1,000. An electron emission device and an electron emission display device include the electron emission source. A composition for forming electron emission sources includes the carbon-based material and the silicon-based material. A method of forming the electron emission source includes applying the composition to a substrate; and heat treating the applied composition. The adhesion between the electron emission source including the cured and heat treated resultant material of the silicon-based material and a substrate is excellent, and thus the reliability of the electron emission device including the cured and heat treated resultant material of the silicon-based material can be enhanced.

    Abstract translation: 电子发射源包括通过固化和热处理至少一种由式(1),(2)和/或(3)表示的硅基材料形成的碳基材料和所得材料:其中R1至R22为 各自独立地为取代或未取代的C1-C20烷基,取代或未取代的C1-C20烷氧基,取代或未取代的C1-C20烯基,卤素原子,羟基或巯基,m和n分别为 整数从0到1,000。 电子发射装置和电子发射显示装置包括电子发射源。 用于形成电子发射源的组合物包括碳基材料和硅基材料。 形成电子发射源的方法包括将组合物施加到基底上; 并对所施加的组合物进行热处理。 包括硅基材料的固化和热处理的所得材料的电子发射源与基板之间的粘附性优异,因此包括硅基材料的固化和热处理的所得材料的电子发射装置的可靠性 可以加强。

    Gate controlled field emission triode and process for fabricating the same
    127.
    发明授权
    Gate controlled field emission triode and process for fabricating the same 失效
    门控场发射三极管及其制造方法

    公开(公告)号:US07704114B2

    公开(公告)日:2010-04-27

    申请号:US11642271

    申请日:2006-12-20

    CPC classification number: H01J9/025 H01J1/304 H01J2201/30446

    Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

    Abstract translation: 本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法,其与半导体制造工艺相关,并且获得了栅极控制的场致发射三极管。 该方法包括提供半导体衬底,分别在半导体衬底上沉积电介质层和导电层,限定电介质层和导电层上的发射极阵列的位置,将沉积超薄ZnO膜作为接种层 衬底,通过使用水热法生长ZnO纳米线作为发射极阵列,并蚀刻除发射极阵列之外的区域,然后获得栅极控制的场致发射三极管。

    Method of preparing a conductive film
    129.
    发明授权
    Method of preparing a conductive film 失效
    制备导电膜的方法

    公开(公告)号:US07686994B2

    公开(公告)日:2010-03-30

    申请号:US11070695

    申请日:2005-03-02

    CPC classification number: H01J1/304 H01J2201/30446 Y10T428/268

    Abstract: The invention provides a method for producing a conductive film that generates an electric current via field emission of electrons, which method comprises incorporating an electrically conductive material into a thermoplastic polymer. The invention also provides a conductive film and a method for generating an electric current via field emission of electrons.

    Abstract translation: 本发明提供一种制造通过电子场发射产生电流的导电膜的方法,该方法包括将导电材料结合到热塑性聚合物中。 本发明还提供一种导电膜和通过电子场发射产生电流的方法。

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