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    Ion plasma beam generating device
    121.
    发明授权
    Ion plasma beam generating device 有权
    离子等离子体束产生装置

    公开(公告)号：US06975073B2

    公开(公告)日：2005-12-13

    申请号：US10688424

    申请日：2003-10-16

    Applicant: George Wakalopulos

    Inventor： George Wakalopulos

    IPC: H01J3/02 ,  H01J7/24

    CPC classification number: H01J3/025 ,  H01J3/021

    Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

    Abstract translation: 一种电子束装置，其中在由两个平行的线栅格划分的室中产生低温气体等离子体。 半导体晶片用作从等离子体吸取离子以撞击晶片的阴极，产生在目标所在的栅格的相对侧朝向阳极加速的二次电子。 为了具有均匀横截面通量特性的光束，半导体晶片被掺杂有渐变掺杂剂浓度，其促进均匀的光束。

    Ion plasma beam generating device
    122.
    发明申请
    Ion plasma beam generating device 有权
    离子等离子体束产生装置

    公开(公告)号：US20040232848A1

    公开(公告)日：2004-11-25

    申请号：US10688424

    申请日：2003-10-16

    Inventor： George Wakalopulos

    IPC: H01J007/24

    CPC classification number: H01J3/025 ,  H01J3/021

    Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

    Abstract translation: 一种电子束装置，其中在由两个平行的线栅格划分的室中产生低温气体等离子体。 半导体晶片用作从等离子体吸取离子以撞击晶片的阴极，产生在目标所在的栅格的相对侧朝向阳极加速的二次电子。 为了具有均匀横截面通量特性的光束，半导体晶片被掺杂有渐变掺杂剂浓度，其促进均匀的光束。

    High electric field, high pressure light source
    123.
    发明授权
    High electric field, high pressure light source 有权
    高电场，高压光源

    公开(公告)号：US06400089B1

    公开(公告)日：2002-06-04

    申请号：US09634403

    申请日：2000-08-09

    Applicant: Manfred Salvermoser ,  Daniel E. Murnick

    Inventor： Manfred Salvermoser ,  Daniel E. Murnick

    IPC: H01J724

    CPC classification number: H01J63/08 ,  G03F7/70016 ,  H01J3/025 ,  H01J61/16 ,  H01J61/64 ,  H01J63/02 ,  H04R25/502 ,  H05G2/003

    Abstract: A method of generating light comprising the step of applying an electric field to an excimer-forming gas such as a gas mixture containing noble gases and hydrogen or halogen, and providing free electrons in the gas. The electric field is configured to accelerate electrons to at least the energy required to form excimers, but in at least one region of the electric field, the field does not substantially ionize the gas, so that the field does not induce arcing through the gas. For example, electrons can be injected from one or more field emission electrodes (18) such as one or more a metal needle tip conductors, whereas the electric field can be a field between the field emission electrodes and a counterelectrode (13).

    Abstract translation: 一种产生光的方法，包括将电场施加到准分子形成气体，例如含有惰性气体和氢气或卤素的气体混合物，并在气体中提供自由电子的步骤。 电场被配置为将电子加速至至少形成极化器所需的能量，但是在电场的至少一个区域中，场基本上不离子化气体，使得场不会引起通过气体的电弧。 例如，电子可以从一个或多个场致发射电极（18）注入，例如一个或多个金属针尖导体，而电场可以是场发射电极和反电极（13）之间的场。

    Plasma compensation cathode
    125.
    发明授权
    Plasma compensation cathode 失效
    等离子体补偿阴极

    公开(公告)号：US5359254A

    公开(公告)日：1994-10-25

    申请号：US17577

    申请日：1993-02-16

    Applicant: Boris A. Arkhipov ,  Yuriy M. Gorbachev ,  Viktor A. Ivanov ,  Konstantin N. Kozubsky ,  Georgy A. Komarov

    Inventor： Boris A. Arkhipov ,  Yuriy M. Gorbachev ,  Viktor A. Ivanov ,  Konstantin N. Kozubsky ,  Georgy A. Komarov

    IPC: H01J3/02 ,  H01J17/26

    CPC classification number: H01J3/025

    Abstract: A plasma compensation cathode includes a casing (1) accommodating coaxially with its outlet hole (2) a hollow holder (3) and a thermal emitter (4) with a central passage (5), a layer (10) of material chemically inert at high temperatures to the materials of the holder and emitter being interposed therebetween. The central passage (5) is blind at the side of admission of gas, and is communicated with the interior of the holder (3) by way of a through passage (8) made in the wall of the thermal emitter (4) so that its axis intersects the axis of passage (5), and longitudinal grooves (9) made in the side surface of the thermal emitter (4) at the location of the inlet holes of the through passage (8). The holder (3) is embraced by heater (6) having a support ring (7) positioned in its midportion and secured in an insulation sleeve (18) separating the heater (6) from the coaxial heat screens (11) interconnected successively to define a sealed cavity (14) wherethrough the interior of the holder (3) communicates with the gas feeding pipe (13) secured in the casing (1) through the support insulator (17). Interposed between mechanical filters (16) and between holder (3) and pipe (13) is a getter (15).

    Abstract translation: 等离子体补偿阴极包括壳体（1），其与其出口孔（2）同轴地容纳中空保持器（3）和具有中心通道（5）的热发射器（4），具有化学惰性的材料层（10） 保持器和发射器的材料的高温被插入其间。 中心通道（5）在入口侧是盲目的，并且通过在热发射器（4）的壁中形成的通过通道（8）与保持器（3）的内部连通，使得 其轴线与通道（5）的轴线相交，以及在通孔（8）的入口孔的位置处形成在热发射器（4）的侧表面中的纵向槽（9）。 保持器（3）由加热器（6）包围，该加热器具有位于其中间部分的支撑环（7），并固定在将加热器（6）与同轴热屏（11）分开连接的绝缘套筒（18）中， 密封腔（14），其中保持器（3）的内部通过支撑绝缘体（17）与固定在壳体（1）中的气体供给管（13）连通。 介于机械过滤器（16）和保持器（3）和管道（13）之间的是吸气剂（15）。

    Electron source having a material-retaining device
    126.
    发明授权
    Electron source having a material-retaining device 失效
    具有材料保持装置的电子源

    公开(公告)号：US5256931A

    公开(公告)日：1993-10-26

    申请号：US775654

    申请日：1991-10-10

    Applicant: Henri Bernadet

    Inventor： Henri Bernadet

    IPC: G21K1/00 ,  H01J3/02 ,  H01J37/077 ,  H05H1/03

    CPC classification number: H01J3/025

    Abstract: The present invention relates to a vacuum arc electron source having an anode and a cathode facing each other such that they produce a plasma (P) after an appropriate voltage difference has been applied between the anode and the cathode, an electron extractor device (30) and a material-retaining device arranged between the extractor device and the plasma source. According to the invention, the material-retaining device comprises, arranged in the electron extraction direction (F), at least one upstream baffle (10) and a downstream baffle (20) which are each electrically conducting and have apertures (16, 26) arranged in quincunx, such that when the baffles (10, 20) are adjusted a given potential, the plasma (P) does not extend to downstream of the downstream baffle (20).

    Abstract translation: 本发明涉及一种真空电弧电子源，其具有彼此面对的阳极和阴极，使得它们在阳极和阴极之间施加了适当的电压差之后产生等离子体（P），电子提取装置（30） 以及布置在提取器装置和等离子体源之间的材料保持装置。 根据本发明，材料保持装置包括布置在电子抽取方向（F）中的至少一个上游挡板（10）和下游挡板（20），每个导流板和导流板均导电并具有孔（16,26） 布置在五项式中，使得当挡板（10,20）被调节给定电位时，等离子体（P）不延伸到下游挡板（20）的下游。

    Large-area uniform electron source
    127.
    发明授权
    Large-area uniform electron source 失效
    大面积均匀电子源

    公开(公告)号：US5003178A

    公开(公告)日：1991-03-26

    申请号：US270751

    申请日：1988-11-14

    Applicant: William R. Livesay

    Inventor： William R. Livesay

    IPC: H01J3/02 ,  H01J37/073 ,  H01J37/077 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30

    CPC classification number: H01J37/077 ,  H01J3/025

    Abstract: A large-area electron source which can operate continuously, stably, and indefinitely in a poor vacuum environment. The source includes a glow discharge cathode, appropriately positioned with respect to a target anode, and a fine-mesh grid spaced from the cathode by a distance less than the mean free path length of electrons leaving the cathode, the grid being electrically biased to control the electron beam current over a wide range with only small grid voltage changes. An accelerating voltage applied to the cathode can be varied continuously from as low as a few hundred volts to 30 KeV or greater and the source will continue to operate satisfactorily. Further, the grid is made of a fine mesh wire of sufficiently small dimensions as to not be resolvable in the target plane. A further refinement of the device utilizes scanning coils to achieve additional uniformity of the incident beam at the target plane. The basic apparatus of the invention can be combined with other features, for use in shadow mask lithography, resist sensitivity measurement, lift off processing, and resist curing.

    Abstract translation: 大面积电子源，可在恶劣的真空环境中连续，稳定，无限期地运行。 源极包括相对于目标阳极适当定位的辉光放电阴极和与阴极隔开距离小于离开阴极的电子的平均自由路径长度的细网格栅格，电网被电偏置以控制 电子束电流在宽范围内只有小的电网电压变化。 施加到阴极的加速电压可以从低到几百伏到30KeV或更大连续地变化，并且源将继续令人满意地运行。 此外，网格由足够小尺寸的细网线制成，以致不能在目标平面中解析。 器件的进一步改进利用扫描线圈来实现入射光束在靶平面处的附加均匀性。 本发明的基本装置可以与用于荫罩光刻，抗蚀剂灵敏度测量，剥离处理和抗蚀剂固化的其它特征相组合。

    Nonthermionic hollow anode gas discharge electron beam source
    128.
    发明授权
    Nonthermionic hollow anode gas discharge electron beam source 失效
    非热电中空阳极气体放电电子束源

    公开(公告)号：US4647818A

    公开(公告)日：1987-03-03

    申请号：US600674

    申请日：1984-04-16

    Applicant: Mooyoung Ham

    Inventor： Mooyoung Ham

    IPC: G21K1/00 ,  H01J3/02 ,  H01J17/44 ,  H01J33/00 ,  H01J37/077 ,  H01J7/24 ,  H05B31/26

    CPC classification number: H01J17/44 ,  H01J3/025 ,  H01J33/00 ,  H01J37/077

    Abstract: Apparatus and method for producing a plurienergetic electron beam source. The apparatus includes a housing which functions as an anode, the same having an electron emission window covered by an electron-transparent grid, a cathode body mounted within the housing and electrically isolated therefrom, the spacing between the cathode body and grid being sufficient to permit a gas discharge to be maintained between them having a plasma region substantially thinner than the cathode sheath region. The method involves the simultaneous feeding of gas between a cathode body and an anode grid, applying voltages of about 10 kV to 20 kV and regulating the gas feed rate and the voltage to maintain a discharge condition of the character described above.

    Abstract translation: 用于生产三能电子束源的装置和方法。 该装置包括用作阳极的壳体，其具有由电子透明栅格覆盖的电子发射窗口，阴极体安装在壳体内并与其电隔离，阴极体与栅极之间的间隔足以允许 保持在它们之间的气体放电具有基本上比阴极鞘区域薄的等离子体区域。 该方法包括在阴极体和阳极电网之间同时进料气体，施加约10kV至20kV的电压并调节气体进料速率和电压以维持上述特性的排放条件。

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