Abstract:
Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 null per square. The PSF provides selective filtering in two directions. In other words, the PSF provides two dimensional filtering.
Abstract:
Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 null per square.
Abstract:
Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.
Abstract:
Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam. The second area comprises at least a portion of the first area flooded by the flood beam. The inspection beam moves in tandem with the flood beam. In another aspect of the present invention, methods and apparatus are provided for controlling the charge buildup of an area of the sample by an electrode having a voltage applied to it and through which the flood beam and charged particles emitted from the area of the sample can pass.
Abstract:
Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the water in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.
Abstract:
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.
Abstract:
Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.
Abstract:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
Abstract:
A surface inspection method of the invention includes scanning an inspection surface taking surface measurements. Determinations of various noise levels in the surface are made based on variations in the surface measurements. A dynamic threshold is then determined. The dynamic threshold adapts to the noise levels in the inspection surface to provide a varying threshold that can provide areas of high and low defect sensitivity on the same inspection surface. Defects are then identified by comparing surface measurements with the dynamic threshold. Additionally, the invention includes a surface inspection method that uses signal-to-noise ratios to identify defects. Such a method scans an inspection surface to obtain surface measurements. Noise levels associated with the inspection surface are then determined. Signal-to-noise ratios are determined for the surface measurements. The signal-to-noise ratios are compared with a signal-to-noise ratio threshold value. Defects are identified based on the comparisons of the signal-to-noise ratio of the surface measurements with the signal-to-noise ratio threshold value.
Abstract:
The present invention pertains to techniques for increasing the available illumination light, increasing the resolution, and optimizing the spectrum of optical inspection systems. These techniques involve combining the light beams from two or more separate illumination sources. In one embodiment, this performed by utilizing two separate illumination sources wherein one of the illumination sources compensates the other illumination source in the wavelength range where illumination light intensity is low. Specifically, this can be performed by utilizing a broadband illumination source and a narrowband illumination source combined with dichroic beamsplitters.