公开(公告)号：WO2011160985A2

公开(公告)日：2011-12-29

申请号：PCT/EP2011/059880

申请日：2011-06-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  STAMPER, Anthony ,  JAHNES, Christopher, Vincent

Inventor： STAMPER, Anthony ,  JAHNES, Christopher, Vincent

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：WO2010003228A1

公开(公告)日：2010-01-14

申请号：PCT/CA2009/000931

申请日：2009-07-08

Applicant: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGIII UNIVERSITY ,  EL-GAMAL, Mourad ,  CICEK, Paul-Vahé ,  NABKI, Frederic

Inventor： EL-GAMAL, Mourad ,  CICEK, Paul-Vahé ,  NABKI, Frederic

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 35O°C, and potentially to below 25O°C, thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

公开(公告)号：TWI549899B

公开(公告)日：2016-09-21

申请号：TW100122287

申请日：2011-06-24

Applicant: 萬國商業機器公司 ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： 宕汀 ,  DANG, DINH ,  多安泰 ,  DOAN, THAI ,  鄧巴喬治A 三世 ,  DUNBAR III, GEORGE A. ,  黑榕新 ,  HE, ZHONG-XIANG ,  赫林盧希爾T ,  HERRIN, RUSSELL T. ,  詹斯克里斯多夫V ,  JAHNES, CHRISTOPHER V. ,  梅林傑佛瑞C ,  MALING, JEFFREY C. ,  莫菲威廉J ,  MURPHY, WILLIAM J. ,  史丹普安東尼K ,  STAMPER, ANTHONY K. ,  杜柏立約翰G ,  TWOMBLY, JOHN G. ,  懷艾瑞克J ,  WHITE, ERIC J.

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

公开(公告)号：US20240359973A1

公开(公告)日：2024-10-31

申请号：US18028567

申请日：2022-04-27

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Yingli SHI ,  Chao ZHOU ,  Yanzhao LI

IPC: B81B7/02 ,  B81C1/00 ,  H01H59/00 ,  H01P1/12

CPC classification number: B81B7/02 ,  B81C1/00142 ,  H01H59/0009 ,  H01P1/122 ,  B81B2201/01 ,  B81B2203/0109 ,  B81B2203/0323 ,  B81B2203/0353 ,  B81C2201/0105

Abstract: A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

公开(公告)号：US20240262678A1

公开(公告)日：2024-08-08

申请号：US18021582

申请日：2022-05-27

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingwen GUO ,  Jianxing LIU ,  Jianyun ZHAO ,  Biqi LI

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0008 ,  B81C1/00984 ,  B81B2201/01 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0323 ,  B81B2203/04 ,  B81B2207/99 ,  B81C2201/0109 ,  B81C2201/0132

Abstract: The present disclosure provides an MEMS device, a method for manufacturing an MEMS device and an electronic device, and belongs to the field of Micro-Electro-Mechanical System technology. The MEMS device includes: a first dielectric substrate and a first component on the first dielectric substrate; the first component and the first dielectric substrate enclose a movable space; the first component has a first portion corresponding to the movable space; the first portion has at least one first opening, and at least one protruding structure is on a side of the first portion close to the first dielectric substrate; orthographic projections of the at least one protruding structure and the at least one first opening on the first dielectric substrate do not overlap with each other, and a thickness of each protruding structure is smaller than a height of the movable space.

公开(公告)号：US09932225B2

公开(公告)日：2018-04-03

申请号：US15148130

申请日：2016-05-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09926191B2

公开(公告)日：2018-03-27

申请号：US15284868

申请日：2016-10-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09871502B2

公开(公告)日：2018-01-16

申请号：US15212094

申请日：2016-07-15

Applicant: Wispry, Inc.

Inventor： Arthur S. Morris, III

IPC: H03J3/20 ,  H03J5/24 ,  H03J5/02 ,  B81B7/00 ,  B81C1/00 ,  H01L27/06 ,  H01L23/522 ,  H01L49/02

CPC classification number: H03J5/0209 ,  B81B7/008 ,  B81B2201/01 ,  B81B2207/053 ,  B81C1/00238 ,  B81C2203/0785 ,  H01L23/5223 ,  H01L27/0688 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H03J2200/10 ,  Y10T29/49105 ,  H01L2924/00

Abstract: The present subject matter relates to systems and methods for arranging and controlling programmable combinations of tuning elements in which more than one form of switching technology is combined in a single array. Specifically, such an array can include one or more first switchable elements including a first switching technology (e.g., one or more solid-state-controlled devices) and one or more second switchable elements including a second switching technology that is different than the first switching technology (e.g., one or more micro-electro-mechanical capacitors). The one or more first switchable elements and the one or more second switchable elements can be configured, however, to deliver a combined variable reactance.

公开(公告)号：US09862598B2

公开(公告)日：2018-01-09

申请号：US14840422

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: G06F17/50 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09718674B2

公开(公告)日：2017-08-01

申请号：US14914015

申请日：2014-08-26

Applicant: SILEX MICROSYSTEMS AB

Inventor： Edvard Kalvesten ,  Thorbjorn Ebefors ,  Niklas Svedin

IPC: H01L23/08 ,  B81B7/00 ,  H01L21/50 ,  B81C1/00 ,  H01L23/00

CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

Abstract: A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.