公开(公告)号：US09102519B2

公开(公告)日：2015-08-11

申请号：US13804934

申请日：2013-03-14

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Carsten Ahrens ,  Stefan Barzen ,  Wolfgang Friza

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/001 ,  B81B3/0027 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00404 ,  B81C1/00984 ,  B81C2201/017 ,  B81C2201/115

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。

公开(公告)号：US20140353774A1

公开(公告)日：2014-12-04

申请号：US13909842

申请日：2013-06-04

Applicant: Invensense, Inc.

Inventor： Cerina Zhang ,  Nim Tea

IPC: H01L21/768 ,  H01L23/48 ,  H01L29/84

CPC classification number: B81C1/00984 ,  B81B3/0008 ,  B81B2207/015 ,  B81C1/00976 ,  B81C2201/115 ,  H01L21/76838 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.

Abstract translation: 本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。 通过在衬底上沉积和图案化介电材料形成凹凸块，并且通过沉积在凸块上的导电层提供导电路径。 导电层也可以被粗糙化以减少粘性。

公开(公告)号：US20140167189A1

公开(公告)日：2014-06-19

申请号：US13718614

申请日：2012-12-18

Applicant: Robert F. Steimle ,  Ruben B. Montez

Inventor： Robert F. Steimle ,  Ruben B. Montez

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的机构。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米团簇形成。 当MEMS器件的下一部分形成在牺牲层上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙的表面减小了可用于MEMS器件中的接触的表面积，并且进而降低了可赋予粘性的面积。

公开(公告)号：US08613287B2

公开(公告)日：2013-12-24

申请号：US12672993

申请日：2008-04-14

Applicant: Chang Han Je ,  Myung Lae Lee ,  Sung Hae Jung ,  Gunn Hwang ,  Chang Auck Choi

Inventor： Chang Han Je ,  Myung Lae Lee ,  Sung Hae Jung ,  Gunn Hwang ,  Chang Auck Choi

IPC: B08B3/00

CPC classification number: B81B3/001 ,  B81C2201/115

Abstract: An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.

Abstract translation: 一种用于防止三维MEMS（微机电系统）微结构静止的装置，该装置包括：基板; 以及多个微型突起以预定的高度形成在基板的顶表面上，使得从布置在其上方的微结构流出的清洗溶液被排出。

公开(公告)号：US08389314B2

公开(公告)日：2013-03-05

申请号：US11538281

申请日：2006-10-03

Applicant: John R. Martin ,  Thomas D. Chen ,  Jinbo Kuang ,  Thomas Kieran Nunan ,  Xin Zhang

Inventor： John R. Martin ,  Thomas D. Chen ,  Jinbo Kuang ,  Thomas Kieran Nunan ,  Xin Zhang

IPC: H01L21/00

CPC classification number: B81B3/001 ,  B81B2201/0257 ,  B81C2201/115

Abstract: A method of producing a MEMS device provides a MEMS apparatus having released structure. The MEMS apparatus is formed at least in part from an SOI wafer having a first layer, a second layer spaced from the first layer, and an insulator layer between the first layer and second layer. The first layer has a top surface, while the second layer has a bottom surface facing the top surface. After providing the MEMS apparatus, the method increases the roughness of at least the top surface of the first layer or the bottom surface of the second layer.

Abstract translation: 制造MEMS器件的方法提供了具有释放结构的MEMS装置。 MEMS器件至少部分地由具有第一层，与第一层隔开的第二层和在第一层和第二层之间的绝缘体层的SOI晶片形成。 第一层具有顶表面，而第二层具有面向顶表面的底表面。 在提供MEMS装置之后，该方法增加了至少第一层的顶表面或第二层的底表面的粗糙度。

公开(公告)号：US20110205615A1

公开(公告)日：2011-08-25

申请号：US13098292

申请日：2011-04-29

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: G02B26/00 ,  B05D5/06 ,  B05D3/10 ,  B05D1/36 ,  C23C16/44 ,  B05D5/00 ,  C23C14/34

CPC classification number: B81C1/00801 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/017 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31935

Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.

Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。

公开(公告)号：US07952789B2

公开(公告)日：2011-05-31

申请号：US12719751

申请日：2010-03-08

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: G02B26/00 ,  G02F1/03

CPC classification number: B81C1/00801 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/017 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31935

Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.

Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。

公开(公告)号：US20110006674A1

公开(公告)日：2011-01-13

申请号：US12880107

申请日：2010-09-12

Applicant: Ron NAAMAN ,  Ben GOLAN ,  Zeev FRADKIN ,  Adam WINKLEMAN ,  Dan ORON

Inventor： Ron NAAMAN ,  Ben GOLAN ,  Zeev FRADKIN ,  Adam WINKLEMAN ,  Dan ORON

IPC: H01J40/06 ,  H01J9/12

CPC classification number: B81C1/00206 ,  B81C1/00031 ,  B81C2201/0132 ,  B81C2201/115 ,  G03F7/40

Abstract: A method for fabrication of substrate having a nano-scale surface roughness is presented. The method comprises: patterning a surface of a substrate to create an array of spaced-apart regions of a light sensitive material; applying a controllable etching to the patterned surface, said controllable etching being of a predetermined duration selected so as to form a pattern with nano-scale features; and removing the light sensitive material, thereby creating a structure with the nano-scale surface roughness. Silanizing such nano-scale roughness surface with hydrophobic molecules results in the creation of super-hydrophobic properties characterized by both a large contact angle and a large tilting angle. Also, deposition of a photo-active material on the nano-scale roughness surface results in a photocathode with enhanced photoemission yield. This method also provides for fabrication of a photocathode insensitive to polarization of incident light.

Abstract translation: 提出了一种具有纳米级表面粗糙度的基板的制造方法。 该方法包括：图案化基板的表面以产生光敏材料的间隔开的区域的阵列; 对所述图案化表面施加可控制的蚀刻，所述可控蚀刻具有预定的持续时间，以便形成具有纳米尺度特征的图案; 并去除感光材料，从而产生具有纳米级表面粗糙度的结构。 用疏水分子对这样的纳米级粗糙表面进行硅烷化，导致产生了以接触角大和倾斜角大的特征的超疏水特性。 而且，在纳米级粗糙度表面上沉积光活性材料导致光电阴极具有增强的光电转换率。 该方法还提供对入射光的极化不敏感的光电阴极的制造。

公开(公告)号：US07851239B2

公开(公告)日：2010-12-14

申请号：US12133813

申请日：2008-06-05

Applicant: James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

Inventor： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC: H01L21/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US07741687B2

公开(公告)日：2010-06-22

申请号：US11681627

申请日：2007-03-02

Applicant: Mayumi Yamaguchi ,  Konami Izumi

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: H01L29/00

CPC classification number: H01L27/1266 ,  B81B3/001 ,  B81C2201/115 ,  H01L27/1214

Abstract: A microstructure includes a first structural layer and a second structural layer which faces the first structural layer with a space interposed therebetween and is partially fixed to the first structural layer. At least one of the first structural layer and the second structural layer can be displaced. Further, opposed surfaces of the first structural layer and the second structural layer are different in roughness.

Abstract translation: 微结构包括第一结构层和第二结构层，第一结构层和第二结构层面向第一结构层，并且间隔开间隔并且部分地固定到第一结构层。 可移位第一结构层和第二结构层中的至少一个。 此外，第一结构层和第二结构层的相对表面的粗糙度不同。