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公开(公告)号:FR2769751B1
公开(公告)日:1999-11-12
申请号:FR9712826
申请日:1997-10-14
Applicant: COMMISSARIAT ENERGIE ATOMIQUE
Inventor: PERRIN AIME , MONTMAYEUL BRIGITTE , MEYER ROBERT
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公开(公告)号:DE19851097A1
公开(公告)日:1999-05-06
申请号:DE19851097
申请日:1998-11-05
Applicant: IMS IONEN MIKROFAB SYST
Inventor: CHALUPKA ALFRED DR , STENGL GERHARD DR
IPC: G21K1/087 , H01J37/12 , H01J3/18 , H01J3/12 , H01J37/153
Abstract: The electrostatic lens (2) is in the form of a ring that has a number of sector electrodes (4) that each cover a specific angular segment. Deformable elements (14) connect the different segments together. Each of the segments has an adjuster (5) that allows individual adjustment.
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公开(公告)号:DE69204271T2
公开(公告)日:1996-03-21
申请号:DE69204271
申请日:1992-12-28
Applicant: COMMISSARIAT ENERGIE ATOMIQUE
Inventor: LEROUX THIERRY , PY CHRISTOPHE
Abstract: System to control the form of a charged particle beam. The particle beam emanates from a source (58) of these particles. This source is associated with a collecting electrode which collects the particles. The system comprises at least one resistive zone (56) and at least two control electrodes (52, 54), this resistive zone and these control electrodes being arranged substantially at the same level as the source, these control electrodes being furthermore placed on either side of the resistive zone and intended for polarising the latter, the electrical resistance profile of the resistive zone being chosen so as to have the distribution of potential making it possible to obtain the desired form of the beam emanating from the source when the control electrodes are suitably polarised. Application to the focusing of a charged particle beam.
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公开(公告)号:DE69016492T2
公开(公告)日:1995-08-31
申请号:DE69016492
申请日:1990-04-23
Applicant: PHILIPS ELECTRONICS NV
Abstract: A planar electron-optical lens is obtained on a semiconductor cathode surface by providing an extra electrode (16) around the gate electrode (14). Dependent on the applied voltage, this configuration operates, for example, as a positive lens which supplies parallel beams without dispersion, suitable for thin, flat display devices. A large positioning tolerance is obtained due to the inherent magnification of the beam diameter in the semiconductor device, while a grid can be dispensed with.
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公开(公告)号:RU2032247C1
公开(公告)日:1995-03-27
申请号:SU5060178
申请日:1992-08-27
Applicant: KATSAP VIKTOR NAUMOVICH
Inventor: SADCHIKHIN ALEKSANDR V , KATSAP VIKTOR N , TSYGANKOV VASILIJ V
IPC: H01J3/18 , H01J31/08 , H01S3/0959
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公开(公告)号:DE4222820A1
公开(公告)日:1994-01-20
申请号:DE4222820
申请日:1992-07-08
Applicant: SIEMENS AG
Inventor: HOENE ERNST-LUDWIG DR , ROHDE KLAUS-D , DAEUMER WOLFGANG DR
Abstract: The gas discharge switch has a cathode (11), anode (12) and auxiliary electrode (13). The cathode serves as a main electrode. The elements are coaxial with each other and the distance between the cathode and anode is 3-5 mm. The electrodes are located in a container with a gas pressure of 10-100 Pascals. The container is formed of ceramic isolators (1, 2) with metal end discs (3,4), that form connectors. The cathode has a cylindrical recess (7) that receives the auxiliary electrode and coaxial apertures (14, 15). A glow discharge is produced in the space between the main and auxiliary electrodes to trigger the main discharge. An electrostatic, magnetic or electromagnetic solenoid electron=optical lens having its focus at the cathode aperture is provided for concentrating fast electrons into the main discharge path. USE/ADVANTAGE - Provides switching frequency of 100 Hz and pulse duration of 0.1 to 1 microsecond, with short delay and discharge start jitter of less than 5 nanoseconds.
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公开(公告)号:FR2641412A1
公开(公告)日:1990-07-06
申请号:FR8817484
申请日:1988-12-30
Applicant: THOMSON TUBES ELECTRONIQUES
Inventor: EPSZTEIN BERNARD
Abstract: The invention relates to an electron source (20) formed of at least one elementary electron emitter (31, 31b) comprising an emissive tip (34) having a very small radius of curvature and operating in accordance with the field emission principle. The invention applies particularly in the case of constructions employing technologies used for integrated circuits or in the area of thin-layered films, these technologies enabling a plurality of elementary emitters to be produced on one substrate. … The aim of the invention is in particular to enable an electron beam (F1) to be produced, the intensity of which is independent of possible variations in electron emission by the emissive tip 34. … The emissive tip (34) interacts with an extractor electrode (27), and according to a characteristic of the invention, a control electrode (29), having a negative potential relative to the extractor electrode (27), is arranged downstream of this latter in relation to the sense of propagation (41) of the beam (F1). … …
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公开(公告)号:DE3805123A1
公开(公告)日:1988-10-13
申请号:DE3805123
申请日:1988-02-18
Applicant: SIEMENS AG
Inventor: STIEBER VOLKER , KRISPEL FRANZ DR
Abstract: A method and an apparatus for irradiating a relatively large area with a charged particle beam. In the method, a pencil-like beam is generated and spread along a fan axis perpendicular to the beam axis. The fan axis is rotated around the beam axis so that finally a circular area is irradiated. The apparatus includes means for generating a pencil-like beam, a lens system for spreading the beam along the fan axis and means to rotate the fan axis around the beam axis. In a preferred embodiment, the beam is spread such that its transverse intensity distribution increases with increasing distance from the beam center so that the area swept by the beam is irradiated with an even intensity.
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公开(公告)号:NL8600391A
公开(公告)日:1987-09-16
申请号:NL8600391
申请日:1986-02-17
Applicant: PHILIPS NV
Abstract: The invention relates to a cathode ray tube having an envelope 1 comprising a screen 2 and an electron gun 3 which is situated inside the envelope 1 opposite to the screen and which has three electrodes 4, 5 and 6, which electrodes are provided coaxially on the inner wall of a glass tube 7 in adjoining places having diameters differing per electrode.In order to obtain, for example, smaller dimensions and a better alignment of the electron gun and a higher resolution, according to the invention a focusing lens associated with the electron gun 3 is a high-ohmic resistance layer 8 having a spiral shape 9.
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