Abstract:
PROBLEM TO BE SOLVED: To provide a circuit and method which put interleaved data in individual sections of a data stream as a circuit and a method for interleaving a data stream (data). SOLUTION: A buffer storage circuit 28 receives and stores a data stream. Here, 1st sections T1 to T2 of the data stream are transferred to a 1st memory circuit 62 and 2nd sections T3 to T5 of the data stream are transferred to a 2nd memory circuit 64. A multiplexer circuit 68 receives data from 1st and 2nd memory circuits and makes choices between the 1st and 2nd sections of the data stream in response to a selection signal to generate an interleaved output signal.
Abstract:
PROBLEM TO BE SOLVED: To increase the number of semiconductor dies to be sealed per unit time by arranged the die between the flag part of a first lead frame and the lead part of a second lead frame, forming electrical connections and sealing the die in a molding material, thereby enhancing the rate of operation. SOLUTION: Welded flag frame and clip frame are subjected to reflow soldering process, and solder pools are fused between a semiconductor die 30 and a flag part 7 and between a lead part 19 and a pad position on the die 30. After reflow, the die 30, the flag part 7 and the pair of lead parts 19 are sealed by transfer molding, for example, for forming a semiconductor package. Finally, individual semiconductor packages are separated from the flag frame and the clip frame. Since this method employs only single-pick place step and single- reflow process, high speed package process can be realized.
Abstract:
PROBLEM TO BE SOLVED: To provide a flexible circuit element suitable for reducing the size of an electronic apparatus by minimizing the flexible width. SOLUTION: A flexible circuit element being laid between the upper and lower housings 102, 108 in an electronic apparatus, e.g. a wireless telephone, includes an end in a tab 2712 separated from the edge of a flex strip and oriented at some angle from the wiring direction of trace. Since the flex width is minimized, the flex can be laid through an opening of minimum size and the size of the electronic apparatus can be minimized.
Abstract:
PROBLEM TO BE SOLVED: To provide the structure of interconnection bumps on a semiconductor device, by forming seed layers on a plurality of bump pads, forming a tin layer on the seed layer and forming an eutectic layer so that it covers the tin layer. SOLUTION: A plurality of bump pads 22 are formed on a semiconductor substrate 24 and a chrome layer 16, and a copper layer 36 as seed layers are stacked on the bump pads 22. A metal layer 38 is formed on the copper layer 36 for preventing the oxidation of copper. The tin layer 40 is formed on the metal layer 38 and eutectic materials 42 containing high tin compounds are formed on a plurality of bump pads 22 so that they cover the tin layer 40. Thus, a semiconductor chip can appropriately be loaded on the semiconductor substrate 24 and the structure of the interconnection bumps for appropriately and physically connecting them to the semiconductor device 32 can be obtained.
Abstract:
PROBLEM TO BE SOLVED: To offer service for plural peripheral equipments for which different parameters are required by a single queue. SOLUTION: A computer system 100 is constituted of a processor 110, a memory 300, an interface 101 and the peripheral equipments 120-1, 120-2, 120-3. The interface is provided with a pointer generator 160, a port 150, a decoder 170 and a parameter register 180. A data word D(k) 380-k is transmitted from the memory 300 to the peripheral equipments 120-1, 120-2 120-3 by the port 150. Or the converse is performed. Communication parameters are stored in a parameter field 185-m of the parameter register 180 as a parameter set {P m }. A parameter set {P i } is selected by using a control word C(k) to be stored in the memory 300 by the decoder 170. Data queue is simultaneously transmitted to two or more peripheral equipments 120-1, 120-2, 120-3. COPYRIGHT: (C)1999,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a circuit for storing data in a dynamic random access memory(DRAM) during the period of a reset state. SOLUTION: When an external reset signal EXRST received by a reset unit 6 is asserted, an internal reset signal INRST is generated by synchronizing the signal EXRST with an internal clock and impresses the signal INRST to a CPU 4 and other modules in the circuit to reset those. During the impression of the signal INRST to the CPU 4, the rate of a refresh signal generated by a DRAM controller 7 is raised in order to refresh data stored in the DRAM 3. When the signal EXRST is disabled, a delay reset signal DLYRST is generated and impressed to the controller 7 to reset the controller 7. Since the CPU 4 has been already reset, the controller 7 is immediately reconstituted and enabled again so as to restart the refresh of the DRAM 3 so that the data in the DRAM 3 can be maintained.
Abstract:
PROBLEM TO BE SOLVED: To provide a method and a device to completely suppress an interference vector in a DS-CDMA communications system. SOLUTION: Receiving branches 1 to 4 are allocated to a multi-path from both a sector that performs soft handoff and a sector that does not perform soft handoff (404 and 406). The set of a traffic channel included in a sector signal is decided for each receiving circuit (410). Interference is classified according to a prescribed interference condition for each receiving circuit (412). A set of interference vectors is selected from a classifying list of interference (414) and a desired code of a receiver or orthogonal projection of a Walsh code is calculated (416). Next, the receiving circuit inversely spreads received data by utilizing the orthogonal projection in its correlating device (418).
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device where the trouble due to contact at the forming of cross connection is dissolved. SOLUTION: A semiconductor device contains the memory array of a SRAM cell. The SRAM cell is formed by using a process flow which is closely connected by a logic-type device. The SRAM cell is formed by using not three typical semiconductor layers but a single semiconductor layer. The SRAM cell contains multiple features which can considerably reduce the size (can reduce it to the size below 0.25 micron, and possible down to 0.1 micron). The system of a local mutual connection part 522 is realized by a peculiar process integrated system and respective local mutual connection parts cross-connect the inverter of SRAM and form it into a single opening 70. The interconnection part 104 of word/line is shifted from the silicon part of the same word/line, and therefore the mutual connection part will not be an obstacle to bit line connection.
Abstract:
PROBLEM TO BE SOLVED: To provide a PLL clock generation system capable of eliminating faults due to overshoot without delaying a processor and reducing the time of a full power mode. SOLUTION: A PLL 310 generates PLL clock output to a frequency divider 330 for frequency dividing a PLL clock. The PLL 310 outputs a frequency lock signal corresponding to the acquisition of a desired output frequency and it starts a counter 320 and enables the execution of a CPU 350 clocked by a system clock. Thus, the CPU 350 performs execution during phase lock at a frequency-divided frequency without the danger of the fault by frequency overshooting. A phase lock signal outputted by the counter 320 is logically connected with signal output from the CPU 350 for requesting a maximum frequency operation. The frequency divider 330 is selected by the connected signal and the CPU 350 performs the execution at the maximum frequency when the PLL 310 is safely phase locked.
Abstract:
PROBLEM TO BE SOLVED: To package a ball grid array(BGA) (a Motorola Co. trade mark) in a chip with a wafer-level packaging having high reliability at lower cost, wherein standard constituent apparatus are usable. SOLUTION: A semiconductor device 1 has a sub chip-scale package structure in which a substrate 50 has at least one of sizes X and Y which is smaller than corresponding size of a semiconductor die 10. The semiconductor device 10 has a plurality of electrical connections between the semiconductor die and the substrate, and the electrical connections 15, 20 are provided in the outside of the substrate, so that the semiconductor device 1 can be packaged at a wafer level of the semiconductor die 10, (i.e., before the semiconductor dies are divided separately).