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公开(公告)号：US20240219485A1
公开(公告)日：2024-07-04
申请号：US18557859
申请日：2022-03-28
Inventor： Mengze SHEN , Zhiping YANG , Xi KONG , Fazhan SHI , Jiangfeng DU
IPC: G01R33/032
CPC classification number: G01R33/032
Abstract: Provided is a device based on ensemble nitrogen-vacancy centers, including: a right-angle prism; a dichroic parabolic condensing lens, a bottom opening oblique plane of the dichroic parabolic condensing lens is fixed on an oblique plane of the right-angle prism, and the dichroic parabolic condensing lens is configured to polarize the ensemble nitrogen-vacancy centers by an incident laser and collect a fluorescence signal at the ensemble nitrogen-vacancy center; a diamond, the diamond is a layered diamond, including a first face and a second face opposite to the first face, the first face is fixed at a top of a paraboloid of the dichroic parabolic condensing lens, and the second face includes the ensemble nitrogen-vacancy centers; a Lenz lens attached to the second face and configured to converge microwave magnetic field; a microwave coil located above the Lenz lens and configured to apply microwave magnetic field to the ensemble nitrogen-vacancy centers.
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公开(公告)号：US20240093345A1
公开(公告)日：2024-03-21
申请号：US18250396
申请日：2020-11-30
Inventor： Mengqi Wang , Ya Wang , Haoyu Sun , Xiangyu Ye , Pei Yu , Hangyu Liu , Pengfei Wang , Fazhan Shi , Jiangfeng Du
CPC classification number: C23C14/042 , C23C14/48 , G01D5/268
Abstract: The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.
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153.发明公开公开(公告)号：US20240079478A1
公开(公告)日：2024-03-07
申请号：US18344625
申请日：2023-06-29
Inventor： Guangwei XU , Qiming HE , Xuanze ZHOU , Qiuyan LI , Xiaolong ZHAO , Shibing LONG
IPC: H01L29/66 , H01L21/477 , H01L29/872
CPC classification number: H01L29/66969 , H01L21/477 , H01L29/872
Abstract: A preparation method of a gallium oxide device based on high-temperature annealing technology and a gallium oxide device are provided. The preparation method includes: preparing a first barrier layer on a surface of a gallium oxide wafer to block an oxygen atmosphere; implementing a patterning process for regulating impurities of the gallium oxide wafer on the barrier layer, a process depth of the patterning process not exceeding a thickness of the barrier layer; annealing the gallium oxide wafer subjected to above treatment in the oxygen atmosphere; removing the barrier layer; and removing a surface layer of the gallium oxide wafer with the barrier layer lifted off. Problems that a local region of a gallium oxide material cannot be treated alone and net carrier concentration in a selective region of the gallium oxide material cannot be regulated with high-temperature annealing technology in the oxygen atmosphere in related art are solved.
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公开(公告)号：US20240079477A1
公开(公告)日：2024-03-07
申请号：US18216425
申请日：2023-06-29
Inventor： Xuanze ZHOU , Guangwei XU , Shibing LONG
IPC: H01L29/66 , H01L21/425 , H01L21/443 , H01L21/465 , H01L21/477 , H01L29/24 , H01L29/786
CPC classification number: H01L29/66969 , H01L21/425 , H01L21/443 , H01L21/465 , H01L21/477 , H01L29/24 , H01L29/78642 , H01L29/7869
Abstract: A vertical gallium oxide transistor and a preparation method thereof are provided. The method includes: annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400° C. for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; removing the defective layer and the oxidized layer on a back of the gallium oxide material and the defective layer on a front of the gallium oxide material so as to obtain an initial sample; and preparing a heavily doped contact layer on the oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of the sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.
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155.发明公开公开(公告)号：US20230330020A1
公开(公告)日：2023-10-19
申请号：US18036397
申请日：2020-11-13
Inventor： Shu ZHU , Yucai WANG , Guorong ZHANG , Qin WANG , Wanyin TAO , Wei JIANG
CPC classification number: A61K9/1272 , A61K9/1277 , A61K47/34 , A61K47/26 , A61K31/43 , A61K38/14 , A61K31/7036
Abstract: An orally administered antibiotic encapsulated in nanospheres, as well as its preparation method and application. The antibiotic encapsulated in the nanospheres includes an antibiotic and a degradable biocompatible polymer that encapsulates the antibiotic, wherein biocompatible polymer includes monosaccharide-modified poly (ethylene glycol)-poly(lactic-co-glycolic acid) (PEG-PLGA), which can significantly improves the damage caused by oral antibiotics to the intestinal microbiota, avoids destruction of the microbial community, thereby preventing chronic diseases associated with intestinal microbial imbalance, and a good biocompatibility and long-term safety.
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Patent Agency Ranking
156.发明授权公开(公告)号：US11623999B2
公开(公告)日：2023-04-11
申请号：US16641330
申请日：2017-09-13
Inventor： Xiaowei Sun , Kai Wang , Haochen Liu , Ziming Zhou , Zhe Zhang , Junjie Hao , Zuoliang Wen
Abstract: A method for preparing a fluorescent polarizing film based on directional arrangement of quantum rods. In the method, an inkjet printing technology is used for printing quantum-rod ink having proper viscosity and surface tension on a substrate according to a preset pattern, and directionally arranging quantum rods to obtain a fluorescent polarizing film. The diameter and spacing of fluorescent lines obtained by the method can be controlled and adjusted according to parameter conditions such as a needle aperture, a printing speed, and a preset pattern. The prepared transparent fluorescent film with directionally arranged quantum rods has a high degree of polarization, can be prepared on a flexible substrate in a normal temperature environment, and has wide applicability.
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157.发明申请公开(公告)号：US20220416145A1
公开(公告)日：2022-12-29
申请号：US17780731
申请日：2020-07-01
Inventor： Shiyu WANG , Futian LIANG , Hui DENG , Ming GONG , Yulin WU , Chengzhi PENG , Xiaobo ZHU , Jianwei PAN
Abstract: The present disclosure provides a two-dimensional scalable superconducting qubit structure and a method for controlling a cavity mode thereof. The two-dimensional scalable superconducting qubit structure includes: a superconducting qubit chip comprising a plurality of two-dimensionally distributed and scalable qubits; a capacitor part of each of the qubits has at least five arms distributed two-dimensionally, two of the at least five arms in each qubit are respectively connected with a read coupling circuit and a control circuit, and the other at least three arms are coupled with adjacent qubits through a coupling cavity.
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公开(公告)号：US11476950B2
公开(公告)日：2022-10-18
申请号：US17390473
申请日：2021-07-30
Inventor： Chen Gong , Jinkang Zhu , Shangbin Li , Rui Ni
IPC: H04B10/00 , H04B10/70 , H04B10/516 , H04J14/00
Abstract: A quantum communication method, an apparatus, and a system are provided. The method includes: modulating a first symbol to an ith direction vector of a first electric wave based on a preset mapping relationship, to obtain a second electric wave; and transmitting the second electric wave, where the first electric wave supports M direction vectors, the ith direction vector of the first electric wave is one of the M direction vectors of the first electric wave, the first symbol is a symbol corresponding to first data, the ith direction vector of the first electric wave corresponds to an ith distribution result, the ith distribution result is obtained by converting the second electric wave into an energy quantum. The first symbol may be modulated to a direction vector of the first electric wave, and this application is compatible with the conventional technology.
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159.发明申请公开(公告)号：US20220284558A1
公开(公告)日：2022-09-08
申请号：US17388131
申请日：2021-07-29
Inventor： Shenghong Huang , Zhiwei Pan , Menglai Jiang , Zhifeng Zheng , Meixia Qiao
Abstract: The present disclosure relates to a method for measuring full-field strain of an ultra-high temperature (UHT) object based on a digital image correlation method. The temperature range is from normal temperature to 3500 degrees Celsius. The method includes the steps of selecting a proper high-temperature-resistant speckle material, tantalum carbide powder, according to the characteristics of the object to be measured. First, polishing a to-be-measured surface of a tungsten test piece to remove an oxide layer, then mixing the tantalum carbide (TaC) powder and absolute ethanol to form a paste according to a mass ratio of 1:2. Making randomly distributed speckles from the mixture on the to-be-measured surface of the test piece which has been processed. In order to improve firmness and stability of the newly made speckles, performing curing treatment to the speckles.
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160.发明申请公开(公告)号：US20220144972A1
公开(公告)日：2022-05-12
申请号：US17436008
申请日：2019-12-13
Inventor： Shuhong Yu , Qingfang Guan , Zimeng Han , Huaibin Yang , Zhangchi Ling
Abstract: The present disclosure provides a surface-nanocrystallized cellulose-containing biomass material, a preparation method and use thereof. The cellulose-containing biomass material is one or more derived from biomass materials containing cellulose components from natural plants or animals. Nanoscale celluloses are present on a surface of the surface-nanocrystallized cellulose-containing biomass material, and a portion of hydroxyl groups in the cellulose structure has been converted to carboxyl groups, such that the surface-nanocrystallized cellulose-containing biomass material has high specific surface area, high surface activity, and high crystallinity. Thus, the present application provides an excellent raw material for the further processing of biomass materials.
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