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公开(公告)号：KR1020150002270A
公开(公告)日：2015-01-07
申请号：KR1020130075892
申请日：2013-06-28
Applicant: 삼성전자주식회사
Abstract: 본 발명은 멀티 코어에서 태스크를 분산하는 기술에 관한 것으로서, 멀티 코어에서 태스크를 분산하기 위한 전자 장치의 방법은, 적어도 하나의 태스크에 대한 태스크 분산 이벤트를 감지하는 과정과, 상기 태스크 분산 이벤트가 감지된 시간을 기준으로 각 CPU에 대한 CPU 사용량을 계산하는 과정과, 상기 각 CPU에 대한 CPU 사용량을 기준으로 상기 태스크 분산 이벤트가 감지된 적어도 하나의 태스크의 CPU를 결정하는 과정을 포함한다.
Abstract translation: 本发明涉及用于平衡多核系统中的任务负载的技术。 一种用于平衡用于电子设备的多核系统中的任务负载的方法包括：检测用于至少任务的任务负载平衡事件的步骤; 基于检测到任务负载平衡事件的时间来计算每个CPU的CPU占用率的步骤; 以及基于每个CPU的CPU使用率来确定CPU至少检测到任务负载平衡事件的任务的步骤。
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公开(公告)号：KR1020140103397A
公开(公告)日：2014-08-27
申请号：KR1020130016601
申请日：2013-02-15
Applicant: 삼성전자주식회사
CPC classification number: H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor light emitting device includes a semiconductor region which includes a light emitting structure; and an electrode layer which includes a first high reflection metal layer which is in contact with a first part of the semiconductor region and reflects light from the light emitting structure, and a second high reflection metal layer which is in contact with a second part of the semiconductor region and reflects the light from the light emitting structure. The second high reflection metal layer is overlapped with the first high reflection metal layer in a location separated from the first high reflection metal layer.
Abstract translation: 一种半导体发光器件包括：包括发光结构的半导体区域; 以及电极层，其包括与半导体区域的第一部分接触并反射来自发光结构的光的第一高反射金属层和与第二高反射金属层接触的第二高反射金属层， 半导体区域并且反射来自发光结构的光。 第二高反射金属层与第一高反射金属层在与第一高反射金属层分离的位置处重叠。
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公开(公告)号：KR101355471B1
公开(公告)日：2014-01-28
申请号：KR1020060088710
申请日：2006-09-13
Applicant: 삼성전자주식회사
CPC classification number: G09G3/3655 , G09G3/3614 , G09G2320/08
Abstract: 본 발명에 따른 전압발생회로는 제 1 전압 데이터를 저장하는 제 1 저장 유닛; 제 2 전압 데이터를 저장하는 제 2 저장 유닛; 및 상기 제 2 전압 데이터의 변경 여부에 따라서 상기 제 1 및 제 2 전압 데이터들 중 어느 하나에 대응하는 전압을 발생하는 전압발생기를 포함한다.
공통전압 발생회로, 비휘발성 메모리Abstract translation: 根据本发明的电压产生电路包括：第一存储单元，用于存储第一电压数据; 第二存储单元，用于存储第二电压数据; 以及电压产生器，用于根据第二电压数据是否改变来产生对应于第一电压数据和第二电压数据中的一个的电压。
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公开(公告)号：KR1020130102211A
公开(公告)日：2013-09-17
申请号：KR1020120023265
申请日：2012-03-07
Applicant: 삼성전자주식회사
CPC classification number: H01L33/32 , H01L33/007 , H01L33/0095 , H01L33/14 , H01L33/44 , H01L2933/0008
Abstract: PURPOSE: A method for manufacturing a nitride-gallium-based semiconductor light emitting device is provided to improve electrical conductivity by increasing the mobility and the doping concentration of holes. CONSTITUTION: A light emitting structure (140) is formed on a substrate. The light emitting structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer (130). A first thermal process is performed on the p-type semiconductor layer. An organic cleaning process is performed on the p-type semiconductor layer. A mask pattern (160) is formed on the upper surface of the p-type semiconductor layer.
Abstract translation: 目的：提供一种用于制造氮化镓 - 镓基半导体发光器件的方法，以通过增加孔的迁移率和掺杂浓度来改善导电性。 构成：在基板上形成发光结构（140）。 发光结构包括n型半导体层，有源层和p型半导体层（130）。 在p型半导体层上进行第一热处理。 对p型半导体层进行有机清洗处理。 掩模图案（160）形成在p型半导体层的上表面上。
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公开(公告)号：KR1020120130840A
公开(公告)日：2012-12-04
申请号：KR1020110048854
申请日：2011-05-24
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve optical extraction efficiency by including a light emitting structure having first and second conductive semiconductor layers and an active layer. CONSTITUTION: A light emitting structure(120) comprises an active layer(122). The active layer is formed between a first conductive semiconductor layer(121) and a second conductive semiconductor layer(123). First and second bonding electrodes are connected to the first and second conductive semiconductor layers, respectively. A transparent electrode layer is formed on the second conductive semiconductor layer. A plurality of nanostructures are formed on the transparent electrode layer.
Abstract translation: 目的：提供半导体发光器件及其制造方法，以通过包括具有第一和第二导电半导体层和有源层的发光结构来提高光学提取效率。 构成：发光结构（120）包括有源层（122）。 有源层形成在第一导电半导体层（121）和第二导电半导体层（123）之间。 第一和第二接合电极分别连接到第一和第二导电半导体层。 在第二导电半导体层上形成透明电极层。 在透明电极层上形成多个纳米结构。
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Patent Agency Ranking
公开(公告)号：KR101186296B1
公开(公告)日：2012-09-27
申请号：KR1020060120975
申请日：2006-12-01
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/032 , H01L27/14609 , H01L31/103 , H01L31/105
Abstract: 포토 다이오드 및 이를 채용한 이미지센서가 개시되어 있다. 개시된 포토 다이오드는, p형 반도체 실리사이드와 n형 반도체 실리사이드가 접합된 구조이며, 이를 채용한 이미지센서는 광전변환을 일으키는 수광부와 수광부에서 발생하는 신호를 출력부까지 전송하는 신호전송부가 기판에 집적되어 있는 이미지센서로서, 수광부가 반도체 실리사이드로 형성된 포토 다이오드를 포함한다.
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公开(公告)号：KR1020120068275A
公开(公告)日：2012-06-27
申请号：KR1020100129835
申请日：2010-12-17
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A method and an apparatus for controlling access to the access point(AP) of a mobile terminal are provided to improve the convenience of a user by automatically implementing an authentication procedure based on pre-stored profile information. CONSTITUTION: A storage part(140) stores the profile information of at least one AP. A near field communication module part(130) implements a connecting process to the AP. A controlling part verifies whether the storage part stores the profile information of the connected AP. If the profile information is stored in the storage part, the controlling part implements a log-in process with respect to the connected AP.
Abstract translation: 目的：提供一种用于控制对移动终端的接入点（AP）的访问的方法和装置，以通过基于预先存储的简档信息自动实现认证过程来提高用户的便利性。 构成：存储部（140）存储至少一个AP的简档信息。 近场通信模块部分（130）实现到AP的连接处理。 控制部件验证存储部件是否存储连接的AP的简档信息。 如果简档信息存储在存储部件中，则控制部件对连接的AP进行登录处理。
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公开(公告)号：KR1020120050182A
公开(公告)日：2012-05-18
申请号：KR1020100111568
申请日：2010-11-10
Applicant: 삼성전자주식회사
IPC: G01S19/26
CPC classification number: H04N1/00323 , H04N1/00068 , H04N1/32101 , H04N2101/00 , H04N2201/0084 , H04N2201/3253
Abstract: PURPOSE: A position correction method and an apparatus using the same are provided to calculate accurate recording position information when a position data acquisition part is initialized after measuring speed and a moving direction using a sensor part. CONSTITUTION: A position correction apparatus(600) comprises an image input part(610), a sensor unit(620), a location information acquisition part(630), and a location information calculation unit(640). The image input part records an image. The sensor unit measures a moving direction and speed when location information corresponding to the image is not able to be acquired. The location information acquisition part selectively acquires a current reference point which is the location information of a current time point when the location information corresponding to the image is acquired. The location information calculation unit calculates the location information corresponding to the image using the measured moving direction and speed.
Abstract translation: 目的：提供一种位置校正方法和使用该位置校正方法的装置，以便在使用传感器部分测量速度和运动方向之后初始化位置数据获取部分时计算精确的记录位置信息。 构成：位置校正装置（600）包括图像输入部（610），传感器单元（620），位置信息获取部（630）和位置信息计算单元（640）。 图像输入部分记录图像。 当不能获得与图像对应的位置信息时，传感器单元测量移动方向和速度。 位置信息获取部选择性地获取当获取与图像对应的位置信息时的当前时间点的位置信息的当前参照点。 位置信息计算单元使用测量的移动方向和速度来计算与图像相对应的位置信息。
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公开(公告)号：KR1020120003119A
公开(公告)日：2012-01-10
申请号：KR1020100063790
申请日：2010-07-02
Applicant: 삼성전자주식회사
CPC classification number: H01L33/22 , H01L33/0079 , H01L2933/0091
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by forming a multiple uneven structure on a substrate made of conductive materials. CONSTITUTION: A first uneven structure(P1) is formed on a first main surface of a substrate(101). A sacrificial layer is formed on the first main surface. A mask with an open area is formed on the sacrificial layer. A second uneven structure(P2) is formed on the substrate. The sacrificial layer and the mask are removed from the substrate. A light emitting laminate is formed on the first and second uneven structures of the substrate.
Abstract translation: 目的：提供半导体发光器件及其制造方法，以通过在由导电材料制成的衬底上形成多重不均匀结构来提高光提取效率。 构成：在基板（101）的第一主表面上形成第一不平坦结构（P1）。 牺牲层形成在第一主表面上。 在牺牲层上形成具有开放区域的掩模。 在基板上形成第二凹凸结构（P2）。 从衬底去除牺牲层和掩模。 在基板的第一和第二不平坦结构上形成发光层压体。
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公开(公告)号：KR1020110070548A
公开(公告)日：2011-06-24
申请号：KR1020090127406
申请日：2009-12-18
Applicant: 삼성전자주식회사
CPC classification number: H01L33/44 , H01L33/502 , H01L33/505 , H01L2933/0025
Abstract: PURPOSE: A semiconductor light emitting device with high light efficiency and a manufacturing method thereof are provided to improve light efficiency by reducing a light loss due to internal total reflection through a passivation layer made of organic materials with a high refractive index. CONSTITUTION: A first conductive semiconductor layer(20) is formed on a substrate(10). The active layer is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(40) is formed on the active layer. A transparent electrode layer is formed on the second conductive semiconductor layer. A passivation layer(80) protects the semiconductor layer and blocks a leakage current.
Abstract translation: 目的：提供一种具有高光效率的半导体发光器件及其制造方法，以通过减少由于通过由具有高折射率的有机材料制成的钝化层的内部全反射引起的光损失来提高光效率。 构成：在衬底（10）上形成第一导电半导体层（20）。 有源层形成在第一导电半导体层上。 在有源层上形成第二导电半导体层（40）。 在第二导电半导体层上形成透明电极层。 钝化层（80）保护半导体层并阻止泄漏电流。
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