公开(公告)号：KR1020090121711A

公开(公告)日：2009-11-26

申请号：KR1020080047743

申请日：2008-05-22

Applicant: 삼성전자주식회사

Inventor： 권장연 ,  이상윤 ,  류명관 ,  김태상 ,  박경배 ,  유병욱 ,  손경석 ,  정지심

IPC: G02F1/1335 ,  G02F1/13

CPC classification number: G02F1/133305 ,  G09F9/35

Abstract: PURPOSE: A display device and a manufacturing method thereof for improving the real feeling and immersion are provided to improve the image quality by changing FOV within a predetermined range. CONSTITUTION: A display device includes a flexible base(10) and a hard base(30). An image display structure(20) is formed on a second surface of the flexible base. The hard base comprises a plurality of pieces. A plurality of pieces is closely fixed to the flexible base. The flexible base is bend in a direction of the image display structure. The image display structure is roundly changed. The reality is improved by increase of FOV(Field Of View) by bending of the display device.

Abstract translation: 目的：提供一种用于改善真实感和浸没的显示装置及其制造方法，以通过在预定范围内改变FOV来改善图像质量。 构成：显示装置包括柔性基座（10）和硬质基座（30）。 图像显示结构（20）形成在柔性基底的第二表面上。 硬底包括多个片。 多个件紧密地固定在柔性基座上。 柔性基座在图像显示结构的方向上弯曲。 图像显示结构被彻底改变。 通过显示装置的弯曲增加FOV（视场）来改善现实。

公开(公告)号：KR1020090084642A

公开(公告)日：2009-08-05

申请号：KR1020080099608

申请日：2008-10-10

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  김태상 ,  권장연 ,  정지심 ,  이상윤 ,  류명관 ,  박경배 ,  유병욱

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648

Abstract: An oxide semiconductor transistor and a manufacturing method thereof are provided to increase the driving current by forming gates at the upper and lower parts of channel layer. A channel layer(116) is made of an oxide semiconductor. The first gate insulating layer(110) is formed between the channel layer and the first gate(112). The second gate insulating layer(120) is formed between the channel layer and the second gate(122). The first gate insulating layer and the second gate insulating layer are made of the different material. The first gate insulating layer is made of the material not including the oxygen. The second gate insulating layer is made of the material including the oxygen.

Abstract translation: 提供一种氧化物半导体晶体管及其制造方法，通过在沟道层的上部和下部形成栅极来增加驱动电流。 沟道层（116）由氧化物半导体构成。 第一栅极绝缘层（110）形成在沟道层和第一栅极（112）之间。 第二栅极绝缘层（120）形成在沟道层和第二栅极（122）之间。 第一栅极绝缘层和第二栅极绝缘层由不同的材料制成。 第一栅绝缘层由不包括氧的材料制成。 第二栅绝缘层由包括氧的材料制成。

公开(公告)号：KR1020090057689A

公开(公告)日：2009-06-08

申请号：KR1020070124382

申请日：2007-12-03

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  박경배 ,  정지심

IPC: G02F1/136 ,  H01L29/786

CPC classification number: G02F1/136213 ,  G02F2203/01 ,  H01L29/7869

Abstract: A display device using an oxide semiconductor thin film transistor is provided to have at least one storage capacitor. A display device using an oxide semiconductor thin film transistor includes a storage electrode(120) and a pixel electrode(130). At least one thin film transistor and at least one storage capacitor are prepared. The storage capacitor of the storage electrode is made of transparent oxide semiconductors, and the pixel electrode is spaced from the storage electrode at a certain interval.

Abstract translation: 提供使用氧化物半导体薄膜晶体管的显示装置具有至少一个存储电容器。 使用氧化物半导体薄膜晶体管的显示装置包括存储电极（120）和像素电极（130）。 制备至少一个薄膜晶体管和至少一个存储电容器。 存储电极的存储电容器由透明氧化物半导体制成，并且像素电极以一定间隔与存储电极间隔开。

公开(公告)号：KR1020080112091A

公开(公告)日：2008-12-24

申请号：KR1020080019304

申请日：2008-02-29

Applicant: 삼성전자주식회사

Inventor： 류명관 ,  이상윤 ,  이제훈 ,  김태상 ,  권장연 ,  박경배 ,  손경석 ,  정지심

IPC: G02F1/136

CPC classification number: G02F1/136 ,  H01L21/67075 ,  H01L29/786 ,  H01L29/7869

Abstract: A method for fabricating ZnO family thin film transistor is provided to reduce the damage of plasma and implement a proper electrical characteristic using wet etching method. A gate(20) is formed on a substrate(10). A gate isolation layer(21) is formed on the gate. A ZnO series channel layer(22) is formed on the gate isolation layer. A conductive material for the electrode manufacture is formed. A mask layer has the pattern corresponding to source / drain electrodes(23a,23b) of the channel layer either side of the thin film transistor on the layer of conductive material. The source / drain electrode is formed by etching the domain which is not covered with the mask layer. A passivation layer(25) is formed to cover the source / drain electrode and channel layer.

Abstract translation: 提供一种制造ZnO族薄膜晶体管的方法，以减少等离子体的损伤，并使用湿式蚀刻方法实现适当的电气特性。 在基板（10）上形成栅极（20）。 栅极隔离层（21）形成在栅极上。 在栅极隔离层上形成ZnO系沟道层（22）。 形成用于电极制造的导电材料。 掩模层具有与导电材料层上的薄膜晶体管的任一侧的沟道层的源极/漏极（23a，23b）对应的图案。 源极/漏极通过蚀刻未被掩模层覆盖的畴来形成。 形成钝化层（25）以覆盖源/漏电极和沟道层。

公开(公告)号：KR1020080104588A

公开(公告)日：2008-12-03

申请号：KR1020070051560

申请日：2007-05-28

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  박경배 ,  정지심

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78696

Abstract: The method of manufacturing the ZnO system thin film transistor is provided to obtain the GIZO thin film transistor by adjusting the proper carrier concentration. The manufacturing method of the ZnO system thin film transistor comprises as follows. A step is for forming the ZnO system channel layer in the substrate(10). The step is for forming the oxide layer including the oxygen of the imperfect combination state on the channel layer. A step is for doing with the annealing on the channel layer(22) and oxide layer. In the annealing step, the oxygen of the oxide layer is provided to the channel layer and the carrier concentration of the channel layer is reduced by the interfacial reaction between the oxide layer and the channel layer.

Abstract translation: 提供制造ZnO系薄膜晶体管的方法，通过调整适当的载流子浓度来获得GIZO薄膜晶体管。 ZnO系薄膜晶体管的制造方法如下。 步骤是在衬底（10）中形成ZnO系沟道层。 该步骤用于在通道层上形成包括不完美组合状态的氧的氧化物层。 步骤是在沟道层（22）和氧化物层上进行退火。 在退火步骤中，氧化物层的氧被提供给沟道层，沟道层的载流子浓度由于氧化物层和沟道层之间的界面反应而降低。

公开(公告)号：KR1020080025539A

公开(公告)日：2008-03-21

申请号：KR1020060090147

申请日：2006-09-18

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  김경엽 ,  김종만 ,  권장연 ,  정지심

IPC: H01L29/786

CPC classification number: H01L21/268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1214

Abstract: A method for manufacturing a lateral crystallized semiconductor layer and a method for manufacturing a thin film transistor using the same are provided to enhance the performance of a semiconductor device by implementing a lateral grain structure at the lateral crystallized semiconductor layer. A semiconductor layer is formed on a substrate(10). Laser beam is irradiated on the semiconductor layer. The irradiated laser beam is divided using a prism sheet(110) having plural prism arrays. The divided laser beams through the prism sheet are irradiated to the semiconductor layer. First and second regions(12a,12b), which are irradiated or not irradiated by the laser beams, are alternately formed on the semiconductor layer and then the first region are completely melted. The lateral crystallization of the first region is induced using the second region as seed.

Abstract translation: 提供一种制造横向结晶化半导体层的方法和使用其制造薄膜晶体管的方法，以通过在横向晶化半导体层处实施横向晶粒结构来提高半导体器件的性能。 在衬底（10）上形成半导体层。 激光束照射在半导体层上。 照射的激光束使用具有多个棱镜阵列的棱镜片（110）进行分割。 通过棱镜片的分割的激光束照射到半导体层。 在半导体层上交替地形成被激光束照射或不被照射的第一和第二区域（12a，12b），然后第一区域被完全熔化。 使用第二区域作为种子诱导第一区域的横向结晶。

公开(公告)号：KR1020070071968A

公开(公告)日：2007-07-04

申请号：KR1020050135845

申请日：2005-12-30

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  타카시노구치 ,  임혁 ,  권장연

IPC: H01L29/786

CPC classification number: H01L21/2026 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1281

Abstract: A method for fabricating a polycrystalline silicon film is provided to form polycrystalline silicon in a desired position by previously forming a silicon island and by crystallizing the silicon island. An electrically insulated thermal conductive layer is formed on a substrate, made of one of aluminum ceramic, cobalt ceramic or Fe ceramic. The aluminum ceramic can be one of Al2O3 or AlN. The cobalt ceramic can be one of CoO or Co3N4. The Fe ceramic can be one of FeO, Fe2O3, Fe3O4 or Fe2N. An amorphous silicon layer is formed on the thermal conductive layer. The amorphous silicon layer is patterned to form an amorphous silicon island. The island is annealed to crystallize the amorphous silicon layer.

Abstract translation: 提供一种制造多晶硅膜的方法，以通过预先形成硅岛并通过使硅岛结晶而在期望的位置形成多晶硅。 在由铝陶瓷，钴陶瓷或Fe陶瓷之一制成的基板上形成电绝缘导热层。 铝陶瓷可以是Al2O3或AlN中的一种。 钴陶瓷可以是CoO或Co3N4之一。 Fe陶瓷可以是FeO，Fe2O3，Fe3O4或Fe2N之一。 在导热层上形成非晶硅层。 图案化非晶硅层以形成非晶硅岛。 将岛退火以使非晶硅层结晶。

公开(公告)号：KR1020070071967A

公开(公告)日：2007-07-04

申请号：KR1020050135844

申请日：2005-12-30

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  김종만 ,  권장연 ,  정지심 ,  타카시노구치 ,  이창수

IPC: H01L21/324 ,  H01L21/20

CPC classification number: H01L21/324 ,  H01L21/02675 ,  H01L21/268

Abstract: A method for fabricating a polycrystalline silicon film is provided to form polycrystalline silicon of a good quality by changing the irradiation method of a laser beam without an additional process. An amorphous silicon layer is formed on a substrate. Local unit heat processing regions generated by a laser beam are formed at regular intervals of a predetermined pitch on a crystallization target region of the amorphous silicon layer so that an annealing process is performed on the crystallization target region. In the annealing process, the pitch as a transfer interval of the laser beam is smaller than the width of the laser beam so that the mutually adjacent unit heat processing regions overlap each other. The laser beam can be transferred in a first direction and a second direction vertical to the first direction with respect to the crystallization target surface of the amorphous silicon.

Abstract translation: 提供一种制造多晶硅膜的方法，通过改变激光束的照射方法而不需要额外的工艺来形成质量好的多晶硅。 在基板上形成非晶硅层。 在非晶硅层的结晶化靶区域上以规定间隔的规则间隔形成由激光束产生的局部单位热处理区域，从而对结晶化对象区域进行退火处理。 在退火处理中，作为激光束的转印间隔的间距小于激光束的宽度，使得相互相邻的单位热处理区域彼此重叠。 可以相对于非晶硅的结晶化靶表面沿第一方向和垂直于第一方向的第二方向转移激光束。

公开(公告)号：KR1020070051090A

公开(公告)日：2007-05-17

申请号：KR1020050108524

申请日：2005-11-14

Applicant: 삼성전자주식회사

Inventor： 임혁 ,  타카시노구치 ,  김종만 ,  박경배 ,  후아샹잉

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/66757

Abstract: 자기정렬에 의한 오프셋 또는 LDD 구조를 갖는 박막 트랜지스터에 관해 기술된다. 개시된 박막 트랜지스터는 기판; 기판 위에 마련되는 것으로 채널 영역, 채널 영역 양측의 소스와 드레인 영역, 그리고 채널 영역과 채널 영역 양측의 소스 영역 및 드레인 영역들 사이에 각각 위치하는 오프셋 영역들을 가지는 실리콘층; 상기 소스 및 드레인 영역을 제외한 상기 채널 영역과 채널 영역의 양측에 마련된 오프셋 영역을 덮는 게이트 절연층; 그리고 상기 양 오프셋 영역을 제외한 채널 영역의 위에 형성되는 게이트층;을 구비한다. 이러한 박막 트랜지스터는 추가적인 마스크 공정이 없이 오프셋 또는 LDD 영역이 얻어지는 구조를 갖는다.
박막 트랜지스터, 셀프얼라인, LDD, 오프셋, 전류누설

公开(公告)号：KR1020070024197A

公开(公告)日：2007-03-02

申请号：KR1020050078882

申请日：2005-08-26

Applicant: 삼성전자주식회사

Inventor： 타카시노구치 ,  선우문욱 ,  장샤오신 ,  조세영 ,  박경배

IPC: C30B29/68 ,  C30B29/06

CPC classification number: H01L21/02639 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1281 ,  H01L29/66772

Abstract: A method for fabricating a single crystal silicon is provided to embody an SOG(system on glass) using a single crystal silicon and a single crystal SOP(system on plastic) by forming a single crystal silicon having excellent crystallinity. A silicon nitride layer is formed on a substrate(10). The substrate can be a plastic substrate or a glass substrate. An insulation layer(20) is formed on the silicon nitride layer. A hole(30a) is formed in the insulation layer. A first silicon layer(40) is deposited from the bottom of the hole exposed to the inside of the hole by selective deposition. A second silicon layer(50) is deposited on the insulation layer and the first silicon layer in the hole, made of amorphous silicon and having a thickness not greater than 100 nanometers. The second silicon layer is crystallized by a heat treatment process.

Abstract translation: 提供一种制造单晶硅的方法，通过形成具有优异结晶度的单晶硅，使用单晶硅和单晶SOP（塑料上的系统）来体现SOG（玻璃体系）。 在衬底（10）上形成氮化硅层。 基板可以是塑料基板或玻璃基板。 在氮化硅层上形成绝缘层（20）。 在绝缘层中形成有孔（30a）。 通过选择性沉积，从暴露于孔内部的孔的底部沉积第一硅层（40）。 第二硅层（50）沉积在孔中的绝缘层和第一硅层上，由非晶硅制成并具有不大于100纳米的厚度。 第二硅层通过热处理工艺结晶。