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公开(公告)号：KR1020120070848A
公开(公告)日：2012-07-02
申请号：KR1020100132342
申请日：2010-12-22
Applicant: 전자부품연구원
CPC classification number: C08J5/005 , B82B3/0038 , B82Y30/00 , B82Y40/00
Abstract: PURPOSE: A density control method of a nanostructure using polymer nanoparticles is provided to control the density of a ZnO nano-structure by mixing polymer particles in a precursor solution during the formation of a seed layer. CONSTITUTION: A density control method of a nanostructure using polymer nanoparticles comprises the following steps: mixing polymer particles with zinc precursor solution; spreading and stabilizing the zinc precursor solution which includes polymer particles on top of a substrate; forming a seed layer by removing polymer particles by heat treating the substrate; and growing a nano-wire structure on the seed layer. The polymer particle is a hydrophilic polymer. The density control method of the nanostructure additionally includes a step of surface-treating before adding the polymer particles into the zinc precursor solution.
Abstract translation: 目的：提供使用聚合物纳米颗粒的纳米结构的密度控制方法，以在形成种子层期间通过混合前体溶液中的聚合物颗粒来控制ZnO纳米结构的密度。 构成：使用聚合物纳米颗粒的纳米结构的密度控制方法包括以下步骤：将聚合物颗粒与锌前体溶液混合; 将包含聚合物颗粒的锌前体溶液扩散并稳定在基底上; 通过热处理所述基材来除去聚合物颗粒而形成种子层; 并在种子层上生长纳米线结构。 聚合物颗粒是亲水性聚合物。 纳米结构的密度控制方法还包括在将聚合物颗粒加入锌前体溶液之前进行表面处理的步骤。
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公开(公告)号：KR1020120015789A
公开(公告)日：2012-02-22
申请号：KR1020100078213
申请日：2010-08-13
Applicant: 전자부품연구원
IPC: B05C5/00
CPC classification number: B05C5/0283 , B05C5/027 , B41J2/1628
Abstract: PURPOSE: A droplet discharging head and a method for manufacturing the same are provided to prevent the destruction of a nozzle due to cleaning cotton flannel in a cleaning process. CONSTITUTION: A droplet discharging head(2) includes a solution containing part(24), a nozzle(22), a nozzle plate(21), and an insulator(23). The solution containing part contains a solution. The nozzle includes an outlet(22a) which is in connection with the solution containing part and discharges droplet. The nozzle plate includes a concave part(21a) surrounding the nozzle. The insulator is filled to embed the concave part and to standardize the tip cross section of the nozzle. A plurality of nozzles is prepared and is arranged in a serial form or a matrix form.
Abstract translation: 目的：提供一种液滴喷射头及其制造方法，以防止在清洁过程中由于清洁棉绒而导致喷嘴的破坏。 构成：液滴喷射头（2）包括溶液包含部分（24），喷嘴（22），喷嘴板（21）和绝缘体（23）。 包含溶液的溶液包含一个溶液。 喷嘴包括与溶液容纳部分连接并排出液滴的出口（22a）。 喷嘴板包括围绕喷嘴的凹部（21a）。 填充绝缘体以嵌入凹部并标准化喷嘴的尖端横截面。 制备多个喷嘴并以串联形式或矩阵形式布置。
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153.发明公开플라즈마 표면 처리를 이용한 산화아연 나노와이어 특성 제어 방법 및 그 방법으로 제조된 산화아연 나노와이어를 구비하는 전자 소자 有权使用等离子体处理的ZNO纳米管的密度，直径和长度控制方法和方法制造的ZNO纳米线
公开(公告)号：KR1020110131395A
公开(公告)日：2011-12-07
申请号：KR1020100050813
申请日：2010-05-31
Applicant: 전자부품연구원
IPC: B29C59/14 , B82B3/00 , H01L21/208 , H01L21/20
CPC classification number: B29C59/14 , B82B3/0009 , C01G9/02 , H01L21/208
Abstract: PURPOSE: A ZnO(Zinc-Oxide) nano wire and a method for controlling characteristics of the ZnO nano wire using plasma surface treatment are provided to achieve cost effectiveness by removing expensive additional processes by applying the plasma surface treating process of a catalyst layer. CONSTITUTION: A method for controlling characteristics of the ZnO nano wire using plasma surface treatment is as follows. A substrate(11) is prepared. A ZnO catalyst layer(13) is formed on the substrate. The ZnO catalyst layer is treated by plasma surface treatment. The ZnO nano wire(15) grows up based on the ZnO catalyst layer, which has been plasma surface-treated.
Abstract translation: 目的：提供ZnO（氧化锌）纳米线和使用等离子体表面处理来控制ZnO纳米线的特性的方法，以通过应用催化剂层的等离子体表面处理工艺去除昂贵的额外工艺来实现成本效益。 构成：使用等离子体表面处理来控制ZnO纳米线的特性的方法如下。 制备基材（11）。 在衬底上形成ZnO催化剂层（13）。 通过等离子体表面处理处理ZnO催化剂层。 ZnO纳米线（15）基于经过等离子体表面处理的ZnO催化剂层生长。
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公开(公告)号：KR101069582B1
公开(公告)日：2011-10-05
申请号：KR1020090132252
申请日：2009-12-28
Applicant: 전자부품연구원
IPC: H01J1/30
Abstract: 본발명의전계방출장치에서탄소나노튜브(CNT, Carbon nanotube)를가지는캐소드전극및 이의제조방법에관한것으로, 이러한본 발명은기판; 및상기기판상에형성되며상면에탄소나노튜브잉크가도포된탄소나노튜브잉크층을가지는금속접착층;을포함하며, 상기기판및 상기금속접착층은레이저에의해함께패터닝되는것을특징으로하는전계방출장치에서탄소나노튜브를가지는캐소드전극과이의제조방법을제공한다.
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公开(公告)号：KR101015150B1
公开(公告)日：2011-02-16
申请号：KR1020080134722
申请日：2008-12-26
Applicant: 전자부품연구원
Abstract: 본 발명은 FED 소자의 전계 방출용 탄소나노튜브 제조를 위해 금속 나노 입자를 기판 상에 적층한 후 열처리하여 나노입자 사이에 공극을 형성한 후 그 상부에 탄소나노튜브 잉크젯팅을 하여 탄소나노튜브의 일단이 공극사이에 물리적으로 끼게(anchoring)한 후 후열처리하여 금속나노입자들이 서로 연결되면서 탄소나노튜브들의 일단을 잡아주어 탄소나노튜브의 접착력을 향상시키고, 전계 방출 능력이 개선된 구조를 얻을 수 있도록 하는 금속 나노 입자를 이용한 전계 방출 소자 및 그 제조 방법에 관한 것이다.
본 발명에 따르는 금속 나노 입자를 이용한 전계 방출 소자는, 수계 잉크를 제공하는 단계; 기판상에 상기 수계 잉크로 패턴을 인쇄하는 단계; 인쇄된 상기 패턴을 열처리 및 경화하여 공극을 형성시키는 단계; 공극이 형성된 상기 패턴 상에 탄소나노튜브 조성물을 인쇄하는 단계; 탄소나노튜브 조성물이 인쇄된 상기 기판을 후열처리하는 단계; 후열처리된 상기 기판을 활성화하는 단계에 의해 구성되는 것을 특징으로 한다.
수계 잉크, 탄소 나노 튜브, 전계 방출 소자, 금속 나노 입자-
Patent Agency Ranking
公开(公告)号：KR100951543B1
公开(公告)日：2010-04-27
申请号：KR1020070076731
申请日：2007-07-31
Applicant: 전자부품연구원
Abstract: 본 발명은 전자빔 증착법을 이용하여 게이트 전극 상부에 텅스텐 소재의 탐침이 형성된 원자간력 캔틸레버를 제공함에 그 목적이 있다.
본 발명의 원자간력 캔틸레버는 SOI 기판상에 소스, 드레인 및 게이트로 형성된 MOSFET 구조물에 있어서, 상기 게이트 상부에 형성된 텅스텐 탐침; 및 상기 탐침을 제외한 MOSFET 전면에 형성된 패시배이션층을 포함한다.
본 발명의 원자간력 캔틸레버의 제조방법은 SOI 기판을 이용하여 MOSFET을 형성하는 단계; 상기 MOSFET 전면에 패시배이션층을 형성한 후 패터닝하여 게이트를 노출시키는 단계; 상기 SOI 기판의 하부 실리콘과 절연막을 식각하는 단계; 및 상기 게이트 상에 텅스텐 탐침을 형성하는 단계를 포함한다.
MOSFET, 캔틸레버, SOI, 텅스텐, 탐침-
公开(公告)号：KR1020090071147A
公开(公告)日：2009-07-01
申请号：KR1020070139362
申请日：2007-12-27
Applicant: 전자부품연구원
Abstract: A method of manufacturing cold cathode using the jet printing method is provided to strongly adhere the carbon nanotube to a substrate by the thermal budget by using a bonding layer. The carbon nanotube solution is prepared. The carbon nanotube solution is jet-printed on the substrate. In a stand-by process, surfactant and carbon nanotube are mixed with water. The carbon nanotube is dispersed by ultrasonic wave. The organic solvent is the mixture of the isopropanol and water. And the water is a rate of 10~90 wt.%. After the dispersion step, the biocide and the additive including moisturizing agent are added in the mixture.
Abstract translation: 提供使用喷墨打印方法制造冷阴极的方法，通过使用结合层通过热预算将碳纳米管强力地附着到基底上。 制备碳纳米管溶液。 将碳纳米管溶液喷射印刷在基板上。 在待机过程中，将表面活性剂和碳纳米管与水混合。 碳纳米管通过超声波分散。 有机溶剂是异丙醇和水的混合物。 水的比例为10〜90重量％。 在分散步骤之后，在混合物中加入杀生物剂和包含保湿剂的添加剂。
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公开(公告)号：KR1020090012694A
公开(公告)日：2009-02-04
申请号：KR1020070076731
申请日：2007-07-31
Applicant: 전자부품연구원
CPC classification number: G01Q60/42 , G01B21/30 , G01Q70/12 , G01R1/06727 , H01L21/203
Abstract: An atomic force cantilever and a method of manufacturing the cantilever are provided to form a passivation layer and then form a tungsten probe so as to maintain high sensitivity of the cantilever. A method of manufacturing an atomic force cantilever includes a step of forming a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) using an SOI(Silicon On Insulator), a step of forming a passivation layer on the overall surface of the MOSFET and patterning the passivation layer to expose a gate of the MOSFET, a step of etching a lower silicon layer and an insulating layer of the SOI substrate, and a step of forming a tungsten probe(180) on the gate.
Abstract translation: 提供原子力悬臂和制造悬臂的方法以形成钝化层，然后形成钨探针，以保持悬臂的高灵敏度。 制造原子力悬臂的方法包括使用SOI（绝缘体上硅）形成MOSFET（金属氧化物半导体场效应晶体管）的步骤，在MOSFET的整个表面上形成钝化层并使钝化图形化的步骤 以暴露MOSFET的栅极，蚀刻SOI衬底的下硅层和绝缘层的步骤，以及在栅极上形成钨探针（180）的步骤。
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公开(公告)号：KR100855602B1
公开(公告)日：2008-09-01
申请号：KR1020070054677
申请日：2007-06-04
Applicant: 전자부품연구원
IPC: G02F1/13
CPC classification number: G02F1/1309 , B41J2/14 , B41J2/1642 , G02F1/1303 , G03F7/0002 , H04N5/225
Abstract: A micro pattern transfer apparatus capable of varying a line width is provided to control a contact area between a substrate and a probe by using elasticity of a probe support unit and a connection unit of the probe, thereby forming a micro pattern on the substrate as controlling the line width. A first ink keeping unit(320) contains ink. A probe unit(310) includes a hole and a probe. The hole transfers ink, applied from the first ink keeping unit, onto a substrate(350). The probe is for opening/closing the hole. A probe support unit fixes the probe unit to a lower part of the first ink keeping unit. An optical unit(330) includes a CCD(Charge Coupled Device) camera for confirming a location and processing state of the probe unit.
Abstract translation: 提供能够改变线宽的微图形转印装置，通过使用探针支撑单元和探针的连接单元的弹性来控制基板和探针之间的接触面积，由此在基板上形成微图案作为控制 行宽。 第一墨水保持单元（320）包含墨水。 探针单元（310）包括孔和探针。 该孔将从第一墨水保持单元施加的墨水转印到基底（350）上。 探头用于打开/关闭孔。 探针支撑单元将探针单元固定到第一墨水保持单元的下部。 光学单元（330）包括用于确认探针单元的位置和处理状态的CCD（电荷耦合器件）照相机。
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公开(公告)号：KR1020070009788A
公开(公告)日：2007-01-19
申请号：KR1020050063670
申请日：2005-07-14
Applicant: 전자부품연구원
Abstract: A read/write enabled atomic force microscopy cantilever is provided to improve the sensitivity by embedding a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) in the atomic force microscopy cantilever. An atomic force microscopy cantilever includes a cantilever support, a cantilever arm, a probe(150), a metal layer(160), a channel(170), a source(180), a drain(190), and a gate(200). A first silicon layer, an oxide layer, and a second silicon layer are sequentially stacked in the cantilever support. The cantilever arm is formed by extending the second silicon layer of the cantilever support. The probe is formed in the second silicon layer of the cantilever arm. The metal layer is formed in the cantilever support. The channel is formed at a lower portion of the probe. Impurities are doped in the source and the drain. The gate is formed between the source and the drain.
Abstract translation: 通过在原子力显微镜悬臂中嵌入一个MOSFET（金属氧化物半导体场效应晶体管）来提供一个支持读/写的原子力显微镜悬臂，以提高灵敏度。 原子力显微镜悬臂包括悬臂支架，悬臂，探针（150），金属层（160），通道（170），源（180），排水口（190）和门 ）。 第一硅层，氧化物层和第二硅层顺序堆叠在悬臂支架中。 悬臂是通过延伸悬臂支撑件的第二硅层而形成的。 探针形成在悬臂的第二硅层中。 金属层形成在悬臂支撑件中。 通道形成在探针的下部。 杂质掺杂在源极和漏极中。 栅极形成在源极和漏极之间。
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