公开(公告)号：US20180253018A1

公开(公告)日：2018-09-06

申请号：US15968743

申请日：2018-05-01

Applicant: ASML Netherlands B.V.

Inventor： Youri Johannes Laurentius Maria VAN DOMMELEN ,  Peter David Engblom ,  Lambertus Gerardus Maria Kessels ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Paul Christiaan Hinnen ,  Marco Johannes Annemarie Pieters

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70683

Abstract: A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.

公开(公告)号：US09970747B2

公开(公告)日：2018-05-15

申请号：US15439833

申请日：2017-02-22

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Justin Lloyd Kreuzer ,  Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen

IPC: G01B9/02 ,  G01B11/14 ,  G03F7/20 ,  G03F9/00

CPC classification number: G01B11/14 ,  F25D3/06 ,  F25D11/003 ,  F25D23/006 ,  G01B9/0207 ,  G03F7/70108 ,  G03F9/7069 ,  G03F9/7084 ,  G03F9/7088

Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.

公开(公告)号：US09632039B2

公开(公告)日：2017-04-25

申请号：US14838268

申请日：2015-08-27

Applicant: Vrije Universiteit Amsterdam ,  Universiteit van Amsterdam ,  Stichting voor Fundamenteel Onderzoek der Materie ,  ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen ,  Nitesh Pandey ,  Stefan Michiel Witte ,  Kjeld Eikema

IPC: G03B27/54 ,  G01N21/956 ,  G03F7/20 ,  G01B11/00 ,  G03H1/04 ,  G03H1/00 ,  G03H1/02

CPC classification number: G01N21/956 ,  G01B11/00 ,  G01N2201/12 ,  G03F7/70141 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03H1/0443 ,  G03H2001/0033 ,  G03H2001/0204 ,  G03H2001/0458

Abstract: Metrology targets are formed on a substrate (W) by a lithographic process. A target (T) comprising one or more grating structures is illuminated with spatially coherent radiation under different conditions. Radiation (650) diffracted by from said target area interferes with reference radiation (652) interferes with to form an interference pattern at an image detector (623). One or more images of said interference pattern are captured. From the captured image(s) and from knowledge of the reference radiation a complex field of the collected scattered radiation at the detector. A synthetic radiometric image (814) of radiation diffracted by each grating is calculated from the complex field. From the synthetic radiometric images (814, 814′) of opposite portions of a diffractions spectrum of the grating, a measure of asymmetry in the grating is obtained. Using suitable targets, overlay and other performance parameters of the lithographic process can be calculated from the measured asymmetry.

公开(公告)号：US09606442B2

公开(公告)日：2017-03-28

申请号：US14418373

申请日：2013-07-16

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70141 ,  G03F9/7026 ,  G03F9/7034

Abstract: An apparatus for measuring positions of marks on a substrate, includes an illumination arrangement for supplying radiation with a predetermined illumination profile across a pupil of the apparatus, an objective lens for forming a spot of radiation on a mark using radiation supplied by said illumination arrangement, a radiation processing element for processing radiation that is diffracted by the mark, a first detection arrangement for detecting variations in an intensity of radiation output by the radiation processing element and for calculating therefrom a position of the mark, an optical arrangement, a second detection arrangement, wherein the optical arrangement serves to direct diffracted radiation to the second detection arrangement, and wherein the second detection arrangement is configured to detect size and/or position variations in the radiation and to calculate therefrom a defocus and/or local tilt of the mark.

公开(公告)号：US09547241B2

公开(公告)日：2017-01-17

申请号：US14787451

申请日：2014-04-25

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen ,  Patricius Aloysius Jacobus Tinnemans

IPC: G03B27/42 ,  G03F7/20 ,  G03F9/00 ,  G01B11/27

CPC classification number: G03F7/70141 ,  G01B11/272 ,  G03F9/7069 ,  G03F9/7088 ,  G03F9/7092

Abstract: An alignment sensor including an illumination source, such as a white light source, having an illumination grating operable to diffract higher order radiation at an angle dependent on wavelength; and illumination optics to deliver the diffracted radiation onto an alignment grating from at least two opposite directions. For every component wavelength incident on the alignment grating, and for each direction, the zeroth diffraction order of radiation incident from one of the two opposite directions overlaps a higher diffraction order of radiation incident from the other direction. This optically amplifies the higher diffraction orders with the overlapping zeroth orders.

Abstract translation: 一种对准传感器，包括诸如白光源的照明源，具有可操作以以取决于波长的角度衍射高阶辐射的照明光栅; 和照明光学器件，以将衍射辐射从至少两个相反的方向传送到对准光栅上。 对于入射在对准光栅上的每个分量波长，并且对于每个方向，从两个相反方向之一入射的辐射的零级衍射级与从另一方向入射的较高的辐射衍射级重叠。 这种光学放大了具有重叠零级的较高的衍射级。

公开(公告)号：US09507907B2

公开(公告)日：2016-11-29

申请号：US14730993

申请日：2015-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; and determining or predicting, using the actual value, an existence, a probability of existence, a characteristic, or a combination selected therefrom, of a defect produced from the hot spot with the device manufacturing process.

Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 并且使用实际值确定或预测由设备制造过程产生的缺陷产生的缺陷的存在，存在概率，特征或其选择的组合。

公开(公告)号：US20150234290A1

公开(公告)日：2015-08-20

申请号：US14428565

申请日：2013-09-23

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Stanley Drazkiewicz ,  Justin Lloyd Kreuzer ,  Gerrit Johannes Nijmeijer

IPC: G03F7/20 ,  G01B11/14

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F9/7069 ,  G03F9/7088

Abstract: An apparatus to measure the position of a mark, the apparatus including an illumination arrangement to direct radiation across a pupil of the apparatus, the illumination arrangement including an illumination source to provide multiple-wavelength radiation of substantially equal polarization and a wave plate to alter the polarization of the radiation in dependency of the wavelength, such that radiation of different polarization is supplied; an objective to direct radiation on the mark using the radiation supplied by the illumination arrangement while scanning the radiation across the mark in a scanning direction; a radiation processing element to process radiation that is diffracted by the mark and received by the objective; and a detection arrangement to detect variation in an intensity of radiation output by the radiation processing element during the scanning and to calculate from the detected variation a position of the mark in at least a first direction of measurement.

Abstract translation: 一种用于测量标记位置的装置，该装置包括用于将辐射引导到装置的光瞳上的照明装置，所述照明装置包括照明源，以提供基本上相等偏振的多波长辐射和波片，以改变 依赖于波长的辐射的极化，使得提供不同极化的辐射; 使用由照射装置提供的辐射在扫描方向上扫描横过标记的辐射来将辐射引导到标记上的目的; 辐射处理元件，用于处理由所述标记衍射并由所述物镜接收的辐射; 以及检测装置，用于检测在扫描期间由辐射处理元件输出的辐射强度的变化，并且根据检测到的变化来计算至少第一测量方向上的标记的位置。

公开(公告)号：US20150227061A1

公开(公告)日：2015-08-13

申请号：US14427942

申请日：2013-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F9/00

CPC classification number: G03F9/7069 ,  G03F9/7088

Abstract: A lithographic apparatus includes a sensor, such as an alignment sensor including a self-referencing interferometer, configured to determine the position of an alignment target including a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot which scans the structure. Multiple position-dependent signals are detected and processed to obtain multiple candidate position measurements. Asymmetry of the structure is calculated by comparing the multiple position-dependent signals. The asymmetry measurement is used to improve accuracy of the position read by the sensor. Additional information on asymmetry may be obtained by an asymmetry sensor receiving a share of positive and negative orders of radiation diffracted by the periodic structure to produce a measurement of asymmetry in the periodic structure.

Abstract translation: 光刻设备包括传感器，诸如包括自参考干涉仪的对准传感器，其被配置为确定包括周期性结构的对准目标的位置。 照明光学系统将不同颜色和偏振的辐射聚焦到扫描结构的光斑中。 检测并处理多个与位置相关的信号以获得多个候选位置测量。 通过比较多个位置相关信号来计算结构的不对称性。 不对称测量用于提高传感器读取位置的精度。 通过不对称传感器可以获得关于不对称性的附加信息，所述非对称传感器接收由周期性结构衍射的辐射的正和负数的一部分，以产生周期性结构中的不对称性的测量。