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    CMOS-MEMS INTEGRATED DEVICE INCLUDING MULTIPLE CAVITIES AT DIFFERENT CONTROLLED PRESSURES AND METHODS OF MANUFACTURE
    153.
    发明申请
    CMOS-MEMS INTEGRATED DEVICE INCLUDING MULTIPLE CAVITIES AT DIFFERENT CONTROLLED PRESSURES AND METHODS OF MANUFACTURE 有权
    CMOS-MEMS集成器件，其中包括在不同的控制压力下的多个CAVIITY和制造方法

    公开(公告)号：US20150129991A1

    公开(公告)日：2015-05-14

    申请号：US14603185

    申请日：2015-01-22

    Applicant: InvenSense, Inc.

    Inventor： Daesung LEE ,  Jongwoo SHIN ,  Jong Il SHIN ,  Peter SMEYS ,  Martin LIM

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/0023 ,  B81B7/0038 ,  B81B7/0041 ,  B81B7/02 ,  B81B2201/0228 ,  B81B2207/017 ,  B81C1/00285 ,  B81C2203/019 ,  B81C2203/035 ,  B81C2203/0785

    Abstract: An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

    Abstract translation: 集成MEMS器件包括两个基板，其中第一和第二基板耦合在一起并且其间具有两个外壳。 第一和第二基板之一包括除气源层和去气阻挡层，以调节两个外壳内的压力。 该方法包括在基板上沉积和图案化除气源层和第一除气阻挡层，产生两个横截面。 在两个横截面之一中，除气源层的顶表面不被除气阻挡层覆盖，而在两个横截面中的另一个中，除气源层被封装在除气阻挡层中。 该方法还包括平行地沉积第二除气阻挡层并蚀刻第二除气阻挡层，使得第二除气阻挡层的间隔物留在除气源层的侧壁上。

    DISTRIBUTED SENSOR SYSTEM
    154.
    发明申请
    DISTRIBUTED SENSOR SYSTEM 审中-公开
    分布式传感器系统

    公开(公告)号：US20140268524A1

    公开(公告)日：2014-09-18

    申请号：US14207477

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: H05K7/02

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

    Abstract translation: 公开了一种在操作环境中提供空间和时间数据的分布式传感器系统。 分布式传感器节点可以耦合在一起以形成分布式传感器系统。 例如，分布式传感器系统包括物理耦合并且能够以分布式方式收集关于环境的数据的传感器节点（SN）的集合。 分布式传感器系统的示例包括第一传感器节点和第二传感器节点。 每个传感器节点具有多个传感器或MIMS装置。 每个传感器节点还可以包括电子电路或电源。 联接区域耦合在第一柔性互连区域和第二柔性互连区域之间。 第一传感器节点耦合到第一柔性互连区域。 类似地，第二传感器节点耦合到第二柔性互连区域。

    CELL PHONE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    155.
    发明申请
    CELL PHONE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    在半导体基板上具有单一集成多传感器器件的单元电话及其方法

    公开(公告)号：US20140264658A1

    公开(公告)日：2014-09-18

    申请号：US14207433

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: H01L27/02 ,  H01L27/16

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了具有多个传感器的蜂窝电话，该传感器被配置为检测和测量不同的感兴趣的参数。 手机包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 手机将要直接测量的第一个参数耦合到直接传感器。 相反，手机可以间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到手机。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

    Sensor with at least one micromechanical structure, and method for producing it
    157.
    发明授权
    Sensor with at least one micromechanical structure, and method for producing it 有权
    具有至少一个微机械结构的传感器及其制造方法

    公开(公告)号：US07273764B2

    公开(公告)日：2007-09-25

    申请号：US11028370

    申请日：2005-01-03

    Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

    Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

    IPC: H01L21/00

    CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

    Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

    Sensor with at least one micromechanical structure and method for production thereof
    158.
    发明申请
    Sensor with at least one micromechanical structure and method for production thereof 有权
    具有至少一个微机械结构的传感器及其制造方法

    公开(公告)号：US20040065932A1

    公开(公告)日：2004-04-08

    申请号：US10168584

    申请日：2002-10-03

    Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

    Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

    Microdevice and its production method
    159.
    发明授权
    Microdevice and its production method 失效
    微设备及其生产方法

    公开(公告)号：US06528724B1

    公开(公告)日：2003-03-04

    申请号：US09889424

    申请日：2001-10-19

    Applicant: Yukihisa Yoshida ,  Martial Chabloz ,  Jiwei Jiao ,  Tsukasa Matsuura ,  Kazuhiko Tsutsumi

    Inventor： Yukihisa Yoshida ,  Martial Chabloz ,  Jiwei Jiao ,  Tsukasa Matsuura ,  Kazuhiko Tsutsumi

    IPC: H01L2302

    CPC classification number: G01P15/125 ,  B81B2201/0228 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00579 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10T29/49002 ,  Y10T29/49117

    Abstract: A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.

    Abstract translation: 一种微型器件，包括具有形成在表面上的凹部的绝缘基板和围绕凹部的绝缘基板的前表面上的梁状硅结构。 梁状结构包括至少一个功能部分，并且功能部分具有结合到绝缘基板的支撑部分和与支撑部分一体并延伸穿过凹部的至少一个悬臂。 微型装置还具有导电膜，该导电膜电连接到支撑部分，至少在悬臂下方的凹部的表面上。 在干蚀刻工艺中，导电膜防止凹部的表面带正电。 因此，具有正电荷的蚀刻气体不会受到来自凹部的电斥力，并且不会撞击到硅衬底的背面，因此不会发生悬臂的侵蚀。 结果，由于在形状和尺寸方面形成了高度精确的束状结构，所以微型器件具有提高的可靠性和改进的设计自由度。

    MEMS 압력 센서, MEMS 관성 센서 집적 구조
    160.
    发明公开
    MEMS 압력 센서, MEMS 관성 센서 집적 구조 审中-实审
    MEMS压力传感器，MEMS惯性传感器一体化结构

    公开(公告)号：KR1020170094425A

    公开(公告)日：2017-08-17

    申请号：KR1020177019439

    申请日：2015-12-14

    Applicant: 고어텍 인크

    Inventor： 정,구오광

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/02 ,  B81B3/0021 ,  B81B7/0061 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/04 ,  B81C1/00166 ,  B81C1/00269 ,  G01L9/12 ,  G01L19/04 ,  G01P15/125 ,  B81B7/00 ,  B81C1/00

    Abstract: 본발명은 MEMS 압력센서, MEMS 관성센서집적구조를개시한다. 상기집적구조는기판에형성된절연층, 모두절연층에형성된제1하부전극과제2하부전극을포함하고; 제1하부전극과함께기압민감형콘덴서를구성하는제1상부전극및 제2하부전극과함께기준콘덴서를구성하는제2상부전극을더 포함하며; 제3지지부를통하여기판의위쪽에지지되는관성민감구조및 관성민감구조와함께관성센서의관성검출콘덴서를구성하는고정극판을더 포함하고; 여기서, 관성민감구조, 고정극판으로구성되는관성검출콘덴서를기판에실장하는커버를더 포함한다. 본발명의집적구조는, MEMS 관성센서와 MEMS 압력센서를동일기판에집적시킴으로써, 칩의면적을효과적으로감소시키고, 이에따라칩의원가를낮출수 있으며, 일차적실장을통하여칩 전체의실장을완료할수 있고, 칩의실장의원가를낮출수 있다.

    Abstract translation: 本发明公开了一种MEMS压力传感器，MEMS惯性传感器集成结构。 集成结构包括形成在衬底上的绝缘层，形成在绝缘层上的第一下电极任务2下电极， 并且与构成压敏电容器的第一上部电极和第二下部电极以及第一下部电极一起构成参考电容器的第二上部电极; 如权利要求3包括进一步支持固定电极板配置惯性检测与在所述衬底的与通过顶部被支撑在惯性敏感结构和惯性敏感结构的惯性传感器的电容器; 这里，盖还包括用于将由惯性敏感结构和固定电极板形成的惯性检测电容器安装在基板上的盖。 本发明的一体化结构，由集成在MEMS惯性传感器和所述一样的MEMS压力传感器基板，并有效地减小芯片面积，yiettara可以降低芯片的成本，并且可以通过主安装完成安装所有的芯片的 ，芯片安装的成本可以降低。

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