-
公开(公告)号：US20240109770A1
公开(公告)日：2024-04-04
申请号：US17936931
申请日：2022-09-30
Applicant: Knowles Electronics, LLC
Inventor： Peter V. Loeppert , Michael Pedersen
CPC classification number: B81C1/00158 , B81B3/0021 , B81B2201/0257 , B81B2203/0163 , B81B2203/0307 , B81C2201/013 , B81C2201/017
Abstract: A method of fabricating a die for a microelectromechanical systems (MEMS) microphone includes the steps of forming a diaphragm, etching a plurality of slots through the diaphragm to define a plurality of springs, releasing the diaphragm and the plurality of springs, wherein the plurality of springs relieves intrinsic stress of the diaphragm, and sealing the plurality of slots with sealing material, thereby disabling the springs.
-
152.发明申请公开(公告)号：US20190233277A1
公开(公告)日：2019-08-01
申请号：US16379982
申请日：2019-04-10
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
-
153.发明申请公开(公告)号：US20180346318A1
公开(公告)日：2018-12-06
申请号：US16042303
申请日：2018-07-23
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Anthony K. Stamper , John G. Twombly
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
-
公开(公告)号：US20180201504A1
公开(公告)日：2018-07-19
申请号：US15923599
申请日：2018-03-16
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stephan Pindl , Bernhard Knott , Carsten Ahrens
CPC classification number: B81C1/00825 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81C1/00873 , B81C2201/017 , B81C2201/053 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
-
公开(公告)号：US09938140B2
公开(公告)日：2018-04-10
申请号：US15206836
申请日：2016-07-11
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stephan Pindl , Bernhard Knott , Carsten Ahrens
CPC classification number: B81C1/00825 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81C1/00873 , B81C2201/017 , B81C2201/053 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
-
Patent Agency Ranking
156.发明申请公开(公告)号：US20180072566A1
公开(公告)日：2018-03-15
申请号：US15802789
申请日：2017-11-03
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
-
157.发明申请公开(公告)号：US20170158490A1
公开(公告)日：2017-06-08
申请号：US15437727
申请日：2017-02-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
-
公开(公告)号：US09650242B2
公开(公告)日：2017-05-16
申请号：US14861358
申请日：2015-09-22
Applicant: International Business Machines Corporation
Inventor： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
CPC classification number: B81B3/0086 , B81B7/0058 , B81B2203/0307 , B81B2203/033 , B81C1/00039 , B81C1/00698 , B81C2201/017 , B81C2203/0764 , B82Y10/00 , C08K5/34 , G06N3/0635 , H01L21/00 , H01L21/02263 , H01L21/30625 , H01L21/465 , H01L27/092 , H01L29/42316 , H01L49/00
Abstract: An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.
-
公开(公告)号：US20170081172A1
公开(公告)日：2017-03-23
申请号：US15196207
申请日：2016-06-29
Applicant: International Business Machines Corporation
Inventor： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
CPC classification number: B81B3/0086 , B81B7/0058 , B81B2203/0307 , B81B2203/033 , B81C1/00039 , B81C1/00698 , B81C2201/017 , B81C2203/0764 , B82Y10/00 , C08K5/34 , G06N3/0635 , H01L21/00 , H01L21/02263 , H01L21/30625 , H01L21/465 , H01L27/092 , H01L29/42316 , H01L49/00
Abstract: An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.
-
160.发明申请公开(公告)号：US20160355392A1
公开(公告)日：2016-12-08
申请号：US15238854
申请日：2016-08-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Anthony K. Stamper , John G. Twombly
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
-
-
-
-
-
-
-
-
-
Search Results
321
records
(took 0.034 seconds)
