Projection lithography photomask blanks, preforms and method of making
    166.
    发明授权
    Projection lithography photomask blanks, preforms and method of making 失效
    投影光刻光掩模坯料,预成型件和制造方法

    公开(公告)号:US06783898B2

    公开(公告)日:2004-08-31

    申请号:US09876194

    申请日:2001-06-06

    Abstract: The invention includes methods of making lithography photomask blanks. The invention also includes lithography photomask blanks and preforms for producing lithography photomask. The method of making a lithography photomask blank includes providing a soot deposition surface, producing SiO2 soot particles and projecting the SiO2 soot particles toward the soot deposition surface. The method includes successively depositing layers of the SiO2 soot particle on the deposition surface to form a coherent SiO2 porous glass preform body comprised of successive layers of the SiO2 soot particles and dehydrating the coherent SiO2 glass preform body to remove OH from the preform body. The SiO2 is exposed to and reacted with a fluorine containing compound and consolidated into a nonporous silicon oxyfluoride glass body with parallel layers of striae. The method further includes forming the consolidated silicon oxyfluoride glass body into a photomask blank having a planar surface with the orientation of the striae layer parallel to the photomask blank planar surface.

    Abstract translation: 本发明包括制造光刻光掩模坯料的方法。 本发明还包括光刻光掩模坯料和用于生产光刻光掩模的预成型件。 制造光刻光掩模坯料的方法包括提供烟灰沉积表面,产生SiO 2烟灰颗粒并将SiO 2烟灰颗粒投射到烟灰沉积表面。 该方法包括在沉积表面上依次沉积SiO 2烟灰颗粒的层,以形成由SiO 2烟灰颗粒的连续层组成的粘结SiO 2多孔玻璃预制体,并使相干的SiO 2玻璃预制体脱水以从预成型体中去除OH。 将SiO 2暴露于含氟化合物并与其反应,并固化成具有平行的条纹层的无孔氟氧化硅玻璃体。 该方法还包括将固化的氟氧化硅玻璃体形成为具有平坦表面的光掩模坯料,其中条纹层的取向平行于光掩模坯料平面。

    Method of making ultra-dry, Cl-free and F-doped high purity fused silica
    168.
    发明申请
    Method of making ultra-dry, Cl-free and F-doped high purity fused silica 审中-公开
    制造超干,无Cl和F掺杂的高纯度熔融石英的方法

    公开(公告)号:US20040118155A1

    公开(公告)日:2004-06-24

    申请号:US10326200

    申请日:2002-12-20

    Abstract: The present invention is directed to a method of making an ultra dry high purity, Cl-free, F doped fused silica glass. Silica powder or soot preforms are used to form a glass under conditions to provide a desired level of F doping while reducing the Cl and nullOH concentrations to trace levels. The method includes providing a glass precursor in the from of a silica powder or soot preform. The powder is heated in a furnace. The powder is exposed to a F-species at a predetermined temperature and time sufficient to melt the powder and form a high purity fused silica glass in the bottom of said furnace.

    Abstract translation: 本发明涉及一种制备超干高纯度无Cl掺杂熔融石英玻璃的方法。 使用二氧化硅粉末或烟灰预制件在条件下形成玻璃以提供期望的F掺杂水平,同时将Cl和OH浓度降低至痕量水平。 该方法包括从二氧化硅粉末或烟炱预制件中提供玻璃前体。 粉末在炉中加热。 粉末在预定温度和时间下暴露于F-物质,足以熔化粉末并在所述炉底部形成高纯度熔融石英玻璃。

    Projection lithography photomasks and method of making
    169.
    发明授权
    Projection lithography photomasks and method of making 失效
    投影光刻光掩模和制作方法

    公开(公告)号:US06689516B2

    公开(公告)日:2004-02-10

    申请号:US09935990

    申请日:2001-08-23

    Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %.

    Abstract translation: 本发明是制造光刻光掩模和光掩模坯料的方法。 制造光刻光掩模和光掩模坯料的方法包括提供OH含量低于50ppm的氟氧化硅玻璃管。 该方法还包括切割氟氧化硅玻璃管,使氟氧化硅玻璃管扁平化,并将扁平切割的氟氧化硅玻璃管形成具有平坦表面的光掩模坯料。 本发明包括玻璃光刻掩模预制件。 玻璃光刻掩模预制件是具有OH含量<= 10ppm的纵向硅氧氟化物玻璃管,F wt。 %浓度> = 0.5wt。 %。

Patent Agency Ranking