METHOD AND DEVICE FOR MEASUREMENT OF UNOCCUPIED ENERGY LEVELS OF SOLID
    161.
    发明公开
    METHOD AND DEVICE FOR MEASUREMENT OF UNOCCUPIED ENERGY LEVELS OF SOLID 审中-公开
    VERFAHREN UND VORRICHTUNG ZUR MESSUNG VON FREIEN ENERGIEPEGELN VON FESTSTOFFEN

    公开(公告)号:EP2821778A1

    公开(公告)日:2015-01-07

    申请号:EP13754054.8

    申请日:2013-02-26

    Abstract: Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.

    Abstract translation: 测量从用电子束照射的固体样品(例如有机半导体)发射的近紫外光或可见光的180至700nm的强度,同时电子束的动能(加速能)在一定范围内变化 为0〜5eV,得到光谱。 从光谱中检测峰,其能量被定义为样品的空闲状态能量。 第一峰的起始能量表示样品的电子亲和力(电子亲和力)。 由于照射到样品上的电子束的能量为5eV以下,所以即使在样品为有机半导体时也几乎不会对样品施加损伤。

    DISPOSITIF D'ANALYSE DE MATERIAUX PAR SPECTROSCOPIE DE PLASMA
    164.
    发明公开
    DISPOSITIF D'ANALYSE DE MATERIAUX PAR SPECTROSCOPIE DE PLASMA 有权
    EINRICHTUNG ZUM ANALYSIEREN VON MATERIALIEN DURCH PLASMASPEKTROSKOPIE

    公开(公告)号:EP2359110A1

    公开(公告)日:2011-08-24

    申请号:EP09759753.8

    申请日:2009-11-03

    Inventor: SENAC Stéphane

    Abstract: The invention relates to a device for analysing materials by plasma spectroscopy, of the type that is portable and self-contained and including a housing (10) containing a laser generator (18) generating laser pulses that are focalised onto the surface of a material to be analysed by a parabolic mirror (32) capable of translation in the housing so as to carry out a series of point measurements along a scanning line at the surface of the material to be analysed and a measurement on a calibration sample (50) mounted in the measurement endpiece (22) of the housing (10).

    Abstract translation: 用于通过等离子体光谱法分析材料的装置是便携式和独立型的装置,包括一个包含激光发生器(18)的壳体(10),该激光发生器(18)发射激光脉冲,该激光脉冲通过抛物面方式聚焦在待分析材料的表面上 反射镜(32),其可在壳体内平移地移动,以便沿着要分析的材料的表面上的扫描线执行一系列点测量,并且从安装在所述待校准样品中的校准样品(50)进行测量 壳体(10)的测量端部件(22)。

    APPARATUS AND METHOD FOR DETECTION OF VACUUM ULTRAVIOLET RADIATION
    169.
    发明公开
    APPARATUS AND METHOD FOR DETECTION OF VACUUM ULTRAVIOLET RADIATION 有权
    DEVICE AND METHOD FOR DETECTION真空紫外线辐射的

    公开(公告)号:EP1664691A1

    公开(公告)日:2006-06-07

    申请号:EP04786908.6

    申请日:2004-09-03

    CPC classification number: G01J1/429 G01J3/443

    Abstract: Vacuum ultraviolet radiation detection apparatus (10) comprises a radiation detector (30) in a chamber (12). The detector (30) receives ultraviolet radiation from a radiation source (36). The chamber is evacuated using a dry vacuum pump (18) to a relatively poor vacuum of no less than 5 Pa. UV transparent gas is supplied from a gas supply (26), into the chamber (12) at a relatively low flow rate (around 0.1 litres/minute) so as to provide an overall pressure in the chamber (12) of between 100 and 1,000 Pa. The use of a relatively inexpensive pump coupled with a lower gas flow rate provides significant cost savings.

    METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS
    170.
    发明公开
    METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS 审中-公开
    方法和装置等离子处理操作注视着董先生

    公开(公告)号:EP1105703A4

    公开(公告)日:2005-08-03

    申请号:EP99918803

    申请日:1999-04-23

    Applicant: SANDIA CORP

    CPC classification number: G01J3/443 G01J3/28 G01J2003/2866

    Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in some manner to calibrating or initializing a plasma monitoring assembly (174). This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window (124) through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber (74).

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